MCP1415/16
Tiny 1.5A, High-Speed Power MOSFET Driver
Features
• High Peak Output Current: 1.5A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 470 pF in 13 ns (typical)
- 1000 pF in 20 ns (typical)
• Short Delay Times: 41 ns (t
D1
), 48 ns (t
D2
)
(typical)
• Low Supply Current:
- With Logic ‘1’ Input - 0.65 mA (typical)
- With Logic ‘0’ Input - 0.1 mA (typical)
• Latch-Up Protected: Will Withstand 500 mA
Reverse Current
• Logic Input Will Withstand Negative Swing Up to
5V
• Space-saving 5L SOT-23 Package
General Description
MCP1415/16 devices are high-speed MOSFET drivers
that are capable of providing 1.5A of peak current. The
inverting or non-inverting single channel output is
directly controlled from either TTL or CMOS (3V to
18V) logic. These devices also feature low shoot-
through current, matched rise and fall time, and short
propagation delays which make them ideal for high
switching frequency applications.
MCP1415/16 devices operate from a single 4.5V to
18V power supply and can easily charge and discharge
1000 pF gate capacitance in under 20 ns (typical).
They provide low enough impedances in both the on
and off states to ensure that the intended state of the
MOSFET will not be affected, even by large transients.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
are not subject to damage when noise spiking (up to
5V, of either polarity) occurs on the ground pin. They
can accept, without damage or logic upset, up to
500 mA of reverse current being forced back into their
outputs. All terminals are fully protected against
Electrostatic Discharge (ESD) up to 2.0 kV (HBM) and
400V (MM).
Applications
•
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Level Translator
Motor and Solenoid Drive
Package Types:
SOT-23-5
MCP1415
NC 1
V
DD
2
IN 3
4 GND
GND
5 OUT
MCP1416
OUT
MCP1415R MCP1416R
NC 1
GND 2
IN 3
4
OUT
OUT
V
DD
V
DD
5
2010 Microchip Technology Inc.
DS22092D-page 1
MCP1415/16
Functional Block Diagram
Inverting
650 µA
300 mV
Output
V
DD
Input
Effective
Input C = 25 pF
(Each Input)
GND
Note:
4.7V
Non-inverting
MCP1415
Inverting
MCP1416
Non-inverting
Unused inputs should be grounded.
DS22092D-page 2
2010 Microchip Technology Inc.
MCP1415/16
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating con-
ditions for extended periods may affect device
reliability.
Absolute Maximum Ratings †
V
DD
, Supply Voltage............................................. +20V
V
IN
, Input Voltage.............. (V
DD
+ 0.3V) to (GND - 5V)
Package Power Dissipation (T
A
= 50°C)
5L SOT23...................................................... 0.39W
ESD Protection on all Pins ......................2.0 kV (HBM)
....................................................................400V (MM)
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V
Parameters
Input
Logic ‘1’ High Input Voltage
Logic ‘0’ Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection Withstand
Reverse Current
Switching Time (Note
1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
V
DD
I
S
I
S
4.5
—
—
—
0.65
0.1
18
1.1
0.15
V
mA
mA
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
20
20
41
48
25
25
50
55
ns
ns
ns
ns
Figure 4-1, Figure 4-2
C
L
= 1000 pF
(Note
2)
Figure 4-1, Figure 4-2
C
L
= 1000 pF
(Note
2)
Figure 4-1, Figure 4-2
(Note
2)
Figure 4-1, Figure 4-2
(Note
2)
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
- 0.025
—
—
—
—
0.5
—
—
6
4
1.5
—
—
0.025
7.5
5.5
—
—
V
V
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
(Note
2)
I
OUT
= 10 mA, V
DD
= 18V
(Note
2)
V
DD
= 18V
(Note
2)
Duty cycle
2%, t
300 µs
(Note
2)
V
IH
V
IL
I
IN
V
IN
2.4
—
-1
-5
1.9
1.6
—
—
—
0.8
+1
V
DD
+0.3
V
V
µA
V
0V
V
IN
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Tested during characterization, not production tested.
2010 Microchip Technology Inc.
DS22092D-page 3
MCP1415/16
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise indicated, over operating range with 4.5V
V
DD
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note
1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
V
DD
I
S
I
S
4.5
—
—
—
0.75
0.15
18
1.5
0.25
V
mA
mA
V
IN
= 3.0V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
30
30
45
50
40
40
55
60
ns
ns
ns
Figure 4-1, Figure 4-2
C
L
= 1000 pF
(Note
2)
Figure 4-1, Figure 4-2
C
L
= 1000 pF
(Note
2)
Figure 4-1, Figure 4-2
(Note
2)
Figure 4-1, Figure 4-2
(Note
2)
V
OH
V
OL
R
OH
R
OL
V
DD
- 0.025
—
—
—
—
—
8.5
6
—
0.025
9.5
7
V
V
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
(Note
2)
I
OUT
= 10 mA, V
DD
= 18V
(Note
2)
V
IH
V
IL
I
IN
V
IN
2.4
—
-10
-5
—
—
—
—
—
0.8
+10
V
DD
+0.3
V
V
µA
V
0V
V
IN
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V
Parameter
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 5LD SOT23
JA
—
256
—
°C/W
T
A
T
J
T
A
-40
—
-65
—
—
—
+125
+150
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Comments
DS22092D-page 4
2010 Microchip Technology Inc.
MCP1415/16
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
= 18V.
400
350
Rise Time (ns)
300
250
200
150
100
50
0
4
6
8
10
12
14
16
18
Supply Voltage (V)
3,300 pF
1,000 pF
6,800 pF
470 pF
300
10,000 pF
10,000 pF
250
Fall Time (ns)
200
150
100
50
0
4
6
8
10
12
14
16
18
Supply Voltage (V)
1,000 pF
3,300 pF
6,800 pF
470 pF
FIGURE 2-1:
Voltage.
225
200
Rise Time (ns)
175
150
125
100
75
50
25
0
100
5V
Rise Time vs. Supply
FIGURE 2-4:
Voltage.
200
Fall Time vs. Supply
12V
175
Fall Time (ns)
150
125
100
75
50
25
0
100
5V
18V
12V
18V
1000
Capacitive Load (pF)
10000
1000
Capacitive Load (pF)
10000
FIGURE 2-2:
Load.
35
30
Time (ns)
25
20
15
10
-40 -25 -10
5
t
FALL
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
54
Propagation Delay (ns)
Fall Time vs. Capacitive
C
LOAD
= 1000 pF
V
DD
= 18V
52
50
48
46
44
42
40
4
V
DD
= 12V
t
D2
t
RISE
t
D1
20
35 50 65 80 95 110 125
5
6
7
8
9
10
11
12
Temperature (°C)
Input Amplitude (V)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
FIGURE 2-6:
Input Amplitude.
Propagation Delay Time vs.
2010 Microchip Technology Inc.
DS22092D-page 5
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