Data Sheet No. PD PD60342A
November 13, 2009
IR21364(S&J)PbF
3-PHASE BRIDGE DRIVER
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage – dV/dt immune
Gate drive supply range from 11.5 V to 20 V
Undervoltage lockout for all channels
Over-current shutdown turns off all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
Cross-conduction prevention logic
Low side and High side outputs in phase with inputs.
3.3 V logic compatible
Lower di/dt gate drive for better noise immunity
Externally programmable delay for automatic fault clear
RoHS Compliant
Product Summary
Topology
V
OFFSET
V
OUT
I
o+
& I
o-
(typical)
t
ON
& t
OFF
(typical)
Package Options
3 phase bridge
driver
≤
600 V
11.5 V – 20 V
200 mA & 350 mA
500 ns & 530 ns
Typical Applications
•
•
•
•
Motor Control
Air Conditioners/ Washing Machines
General Purpose Inverters
Micro/Mini Inverter Drivers
28-Lead SOIC
44-Lead PLCC
w/o 12 Leads
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© 2009 International Rectifier
1
IR21364(S&J)PbF
Description
The IR21364(S&J)PBF is a high voltage, high speed power MOSFET and IGBT drivers with three
independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC
technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL
outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an
external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An
open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred.
Overcurrent fault conditions are cleared automatically after a delay programmed externally via an RC
network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed
for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency
applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side
configuration which operates up to 600 V.
Qualification Information
†
Industrial
Qualification Level
††
Comments: This family of ICs has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification
level is granted by extension of the higher Industrial
level.
SOIC28W
MSL3 , 260°C
(per IPC/JEDEC J-STD-020)
MSL3 , 245°C
(per IPC/JEDEC J-STD-020)
†††
†††
Moisture Sensitivity Level
PLCC44
Human Body Model
ESD
Machine Model
IC Latch-Up Test
RoHS Compliant
†
††
†††
Class 2
(per JEDEC standard JESD22-A114)
Class B
(per EIA/JEDEC standard EIA/JESD22-A115)
Class I, Level A
(per JESD78)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
www.irf.com
© 2009 International Rectifier
2
IR21364(S&J)PbF
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
V
S
V
B
V
HO
V
CC
V
SS
V
LO1,2,3
V
IN
V
FLT
dV/dt
P
D
Rth
JA
T
J
T
S
T
L
High side offset voltage
Definition
High side floating supply voltage
High side floating output voltage
Low side and logic fixed supply voltage
Logic ground
Low side output voltage
Input voltage LIN, HIN, ITRIP, EN, RCIN
FAULT output voltage
Allowable offset voltage slew rate
Package power dissipation
@ T
A
≤
+25 °
C
Thermal resistance, junction to
ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(28 lead SOIC)
(44 lead PLCC)
(28 lead SOIC)
(44 lead PLCC)
Min
-0.3
-0.3
V
CC
- 25
-0.3
V
SS
-0.3
V
SS
-0.3
—
—
—
—
—
—
-55
—
Max
625
25
V
CC
+ 0.3
V
CC
+ 0.3
lower of
V
CC
+ 0.3 or
Vss+15
V
CC
+ 0.3
50
1.6
2.0
78
63
150
150
300
Units
V
B 1,2,3
- 25 V
B 1,2,3
+ 0.3
V
S1,2,3
- 0.3 V
B 1,2,3
+ 0.3
V
V/ns
W
°
C/W
°
C
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute referenced to COM. The V
S
& V
SS
offset rating are
tested with all supplies biased at a 15 V differential.
Symbol
V
B1,2,3
V
S 1,2,3
V
CC
V
HO 1,2,3
V
LO1,2,3
V
SS
V
FLT
V
RCIN
Definition
High side floating supply voltage
High side floating supply voltage
Low side supply voltage
High side output voltage
Low side output voltage
Logic ground
FAULT output voltage
RCIN input voltage
IR21364
IR21364
Min.
V
S1,2,3
+11.5
Note 1
11.5
V
S1,2,3
0
-5
V
SS
V
SS
Max.
V
S1,2,3
+ 20
600
20
V
B1,2,3
V
CC
5
V
CC
V
CC
Units
V
ITRIP input voltage
V
SS
V
SS
+ 5
Logic input voltage LIN, HIN, EN
V
SS
V
SS
+ 5
-40
Ambient temperature
125
°
C
Note 1:
Logic operational for
V
S
of COM -5 V to COM + 600 V. Logic state held for
V
S
of COM -5 to COM –
V
BS.
(Please refer to the Design Tip DT97 -3 for more details).
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© 2009 International Rectifier
V
ITRIP
V
IN
T
A
3
IR21364(S&J)PbF
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS 1,2,3
) = 15 V, TA = 25° unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
C
V
SS
and are applicable to all six channels (HIN1,2,3 and LIN1,2,3). The V
O
and I
O
parameters are referenced to COM
and V
S1,2,3
and are applicable to the respective output leads: HO1,2,3 and LO1,2,3.
Symbol
V
IH
V
IL
V
EN,TH+
V
EN,TH-
V
IT,TH+
V
IT,HYS
V
RCIN, TH+
V
RCIN, HYS
V
OH
V
OL
V
CCUV+
V
CCUV-
V
CCUVHY
V
BSUV+
V
BSUV-
V
BSUVHY
llk
I
QBS
I
QCC
I
LIN
+
I
LIN
-
I
HIN
+
I
HIN
-
I
ITRIP+
I
ITRIP-
I
EN+
I
EN-
I
RCIN
Io+
Io-
R
on_RCIN
R
on_FAULT
Definition
Logic “0” input voltage
Logic “1” input voltage
Enable positive going threshold
Enable negative going threshold
ITRIP positive going threshold
ITRIP hysteresis
RCIN positive going threshold
RCIN hysteresis
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
V
CC
supply undervoltage positive going
threshold
V
CC
supply undervoltage negative going
threshold
V
CC
supply undervoltage hysteresis
V
BS
supply undervoltage positive going
threshold
V
BS
supply undervoltage negative going
threshold
V
BS
supply undervoltage
hysteresis
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Input bias current (LOUT = HI)
Input bias current (LOUT = LO)
Input bias current (HOUT = HI)
Input bias current (HOUT = LO)
“High” ITRIP input bias current
“Low” ITRIP input bias current
“High” ENABLE input bias current
“Low” ENABLE input bias current
RCIN input bias current
Output high short circuit pulsed current
Output low short circuit pulsed current
RCIN low on resistance
FAULT low on resistance
IR21364
IR21364
IR21364
IR21364
IR21364
IR21364
Min Typ Max Units
—
2.5
—
0.8
0.37
—
—
—
—
—
9.6
8.6
—
9.6
8.6
—
—
—
—
—
-1
—
-1
—
-1
—
-1
—
120
250
—
—
—
—
—
—
0.46
0.07
8
3
0.9
0.4
10.4
9.4
1
10.4
9.4
1
—
70
0.6
100
—
100
—
3.3
—
100
—
—
200
350
50
50
0.8
—
2.5
—
0.55
—
—
—
1.4
0.6
11.2
10.2
—
11.2
10.2
—
50
120
1.3
195
—
195
—
6
—
—
—
1
—
mA
—
100
100
µA
mA
V
Test
Conditions
Io = 20 mA
µA
V
B
= V
S
= 600 V
V
B1,2,3
= V
S1,2,3
=
600 V
V
IN
= 0 V or 5 V
V
LIN
= 3.3 V
V
LIN
= 0 V
V
HIN
= 3.3 V
V
HIN
= 0 V
V
ITRIP
= 3.3 V
V
ITRIP
= 0 V
V
EN
= 3.3 V
V
EN
= 0 V
Vrcin = 0 V or 15
V
Vo = 0 V,
PW
≤
10 µs
Vo = 15 V,
PW
≤
10 µs
I = 1.5 mA
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© 2009 International Rectifier
4
IR21364(S&J)PbF
Dynamic Electrical Characteristics
Dynamic Electrical Characteristics V
CC
= V
BS
= V
BIAS
= 15 V, V
S1,2,3
= V
SS
= COM, TA = 25° and CL = 1000 pF
C
unless otherwise specified
.
Symbol
t
on
t
off
t
r
t
f
t
EN
t
ITRIP
t
bl
t
FLT
t
FILIN
t
filterEn
DT
MT
MDT
PM
t
FLTCLR
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
ENABLE low to output shutdown propagation
delay
ITRIP to output shutdown propagation delay
ITRIP blanking time
ITRIP to FAULT propagation delay
Input filter time (HIN, LIN)
Enable input filter time
Deadtime
Ton, off matching time (on all six channels)
DT matching (Hi->Lo & Lo->Hi on all channels)
pulse width distortion (pwin-pwout)
FAULT clear time RCIN: R = 2 M , C = 1 nF
Min
350
375
—
—
300
500
100
400
100
100
220
—
—
—
1.3
Typ
500
530
125
50
450
750
150
600
200
200
290
—
—
—
1.65
Max Units
650
685
190
75
600
1000
—
800
—
—
360
75
70
75
2
ms
ns
Test Conditions
V
IN
= 0 V & 5 V
V
IN,
V
EN
= 0 V or 5 V
V
ITRIP
= 5 V
V
IN
= 0 V or 5 V
V
ITRIP
= 5 V
V
IN
= 0 V & 5 V
External dead time
>450 nsec
PW input =10 µs
V
IN
= 0 V or 5 V
V
ITRIP
= 0 V
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© 2009 International Rectifier
5
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