HF250-50
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI HF250-50
is a 50 V epitaxial
silicon NPN transistor, designed for
SSB communications.
PACKAGE STYLE 0.550 4L FLG
FEATURES:
•
P
G
= 14 dB min. at 250 W/30 MHz
•
IMD
3
= 150 dBc max. at 250 W
(PEP)
•
Omnigold™
Metalization System
E
C
B
E
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
40 A
110 V
55 V
4.0 V
140 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.40 °C/W
ORDER CODE: ASI10615
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CEO
I
CES
h
FE
C
ob
G
P
IMD
3
η
C
T
C
= 25° C
NONETEST
CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
I
E
= 20 mA
V
CE
= 30 V
V
CE
= 60 V
V
CE
= 6.0 V
V
CB
= 50 V
I
C
= 10 A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
55
110
4.0
10
10
15
45
360
14.5
UNITS
V
V
V
mA
mA
---
pF
dB
dBc
%
V
CE
= 50 V
I
CQ
= 150 mA
P
OUT
= 250 W
(PEP)
37
-30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. D
1/2
HF250-50
ERROR! REFERENCE SOURCE NOT FOUND.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. D
2/2
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