HF220-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI HF220-28
is 28 V epitaxial
planar transistor, designed for SSB
and VHF communications. The device
utilizes emitter ballasting for improved
ruggedness and reliability.
PACKAGE STYLE .500 4L FLG
.112x45°
A
L
FEATURES:
•
P
G
= 12 dB min. at 220 W/30 MHz
•
IMD
3
= -30 dBc max. at 220 W
(PEP)
•
Omnigold™
Metalization System
•
30 MHz @ 28 V operations
•
IMD –30 dBc
FULL R
E
C
Ø.125 NOM.
C
B
B
E
H
D
G
F
E
K
I J
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
16 A
70 V
35 V
4.0 V
320 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.6 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.125 / 3.18
.245 / 6.22
.720 / 18.28
.125 / 3.18
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI10609
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CEO
I
CES
h
FE
C
OB
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 200 mA
I
C
= 100 mA
I
E
= 20 mA
V
CE
= 30 V
V
CE
= 35 V
V
CE
= 5.0 V
V
CB
= 28 V
I
C
= 7.0 A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
35
70
4.0
5.0
5.0
15
---
450
60
---
UNITS
V
V
V
mA
mA
---
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
ERROR! REFERENCE SOURCE NOT FOUND.
HF220-28
CHARACTERISTICS
G
P
IMD
3
η
C
Load
Mismatch
V
CE
= 28 V
T
C
= 25 °C
I
CQ
= 750 mA
P
OUT
= 220 W
12
---
40
-30
dB
dBc
%
F
1
= 30.000MHz
V
CE
= 28 V
f
2
= 30.001 MHz
I
CQ
= 750 mA
P
OUT
= 220 W
---
∞
:1
---
VSWR
IMPEDANCE DATA
FREQ
Z
IN
(Ω)
Ω
30 MHz
1.15 + J0.41
Z
CL
(Ω)
Ω
1.25 + J1.92
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2
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