AM80912-015
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI AM80912-015
is designed for
avionics applications, including JTIDS. It
is housed in a Hermetic Package.
PACKAGE STYLE .310 2L FLG
4x .062 x 45°
2xB
D
G
ØE
F
A
.040 x 45°
C
FEATURES:
•
Internal Input/Output Matching Network
•
P
G
= 8.1 dB at 15 W/ 1215 MHz
•
Omnigold™
Metalization System
•
28 V Operations
•
Common Base configuration
M
H
I
J
K
L
R
N
DIM
A
B
C
D
MINIMUM
inches / mm
P
MAXIMUM
inches / mm
.095 / 2.41
.100 / 2.54
.050 / 1.27
.286 / 7.26
.110 / 2.79
.306 / 7.77
.148 / 3.76
.400 / 10.16
.119 / 3.02
.552 / 14.02
.790 / 20.07
.300 / 7.62
.003 / 0.08
.052 / 1.32
.118 / 3.00
.105 / 2.67
.120 / 3.05
.306 / 7.77
.130 / 3.30
.318 / 8.08
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
1.8 A
32 V
50 W @ T
C
= 25 °C
-65 °C to +250 °C
-65 °C to +200 °C
3.0 °C/W
E
F
G
H
I
J
K
L
M
N
P
R
.572 / 14.53
.810 / 20.57
.320 / 8.13
.006 / 0.15
.072 / 1.83
.131 / 3.33
.230 / 5.84
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CES
h
FE
P
G
η
C
I
C
= 10 mA
I
C
= 10 mA
I
E
= 1 mA
V
CE
= 28 V
V
CE
= 5.0 V
V
CC
= 28 V
P
IN
= 2.3 W
T
C
= 25 °C
NONETEST
CONDITIONS
R
BE
= 10
Ω
V
BE
= 0 V
I
C
= 500 mA
P
OUT
= 15 W
f = 960 - 1215 MHz
MINIMUM TYPICAL MAXIMUM
55
55
3.5
2.0
15
8.1
45
8.9
49
150
UNITS
V
V
V
mA
---
dB
%
Pulse format: 6.4 µsec on 6.6 µsec off, repeat for 3.3 ms, Then off for 4.5125 ms
Duty Cycle: Burst 49.2%, overall 20.8%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
嵌入式系统
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