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NCE1216
NCE P-Channel
Enhancement Mode Power MOSFET
Description
The NCE1216 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages .This device is suitable for use as a load switching
application and a wide variety of other applications.
S
G
D
General Features
●
V
DS
= -12V,I
D
= -16A
R
DS(ON)
< 22mΩ @ V
GS
=-2.5V
R
DS(ON)
< 18mΩ @ V
GS
=-4.5V
●
Advanced trench MOSFET process technology
●
Ultra low on-resistance with low gate charge
Schematic diagram
Application
●
PWM applications
●
Load switch
●
Battery charge in cellular handset
Pin assignment
DFN2X2-6L bottom view
Package marking and ordering information
Device Marking
NCE1216
Device
NCE1216
Device Package
DFN2X2-6L
Reel Size
-
Tape Width
-
Quantity
-
Absolute maximum ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
-12
±12
-16
-65
18
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
R
θJC
6.9
℃
/W
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Electrical characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=-8A
-
-
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-6V,I
D
=-10A,
V
GS
=-4.5V
V
DD
=-10V,I
D
=-1A
V
GS
=-4.5V,R
GEN
=10Ω
-
-
-
-
-
-
-
C
lss
C
oss
C
rss
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
-
-
-
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-6.7A
V
GS
=-2.5V, I
D
=-6.2A
V
DS
=-5V,I
D
=-6.7A
-0.4
-
-
20
V
(BR) DSS
I
DSS
I
GSS
V
GS
=0V I
D
=-250μA
V
DS
=-12V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
-12
-
-
NCE1216
Condition
Min
Typ
-
-
-
-0.7
11.5
14
-
2700
680
590
11
35
30
10
35
5
10
-
-
Symbol
Max
-
-1
±100
-1
18
22
-
-
-
-
-
-
-
-
48
-
-
-1.2
-16
Unit
V
μA
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics
t
on
t
r
90%
NCE1216
t
off
t
f
90%
t
d(on)
t
d(off)
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
Threshold Voltage (V)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 3 Output Characteristics
Figure 4 Drain Current
Rdson On-Resistance(Ω)
Vg
s Gate-Source Voltage (V)
I
D
- Drain Current (A)
Figure 5 Rdson vs Vgs
Rdson On-Resistance(Ω)
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
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NCE1216
I
s
- Reverse Drain Current (A)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Vsd Source-Drain Voltage (V)
Figure 7 Capacitance vs Vds
Figure 8 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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DFN2X2-6L Package Information
NCE1216
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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