Pb Free Product
http://www.ncepower.com
NCEP85T25
NCE N-Channel
Super Trench
Power MOSFET
Description
The NCEP85T25 uses
Super Trench
technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R
DS(ON)
and Q
g
. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
●
V
DS
=85V,I
D
=250A
R
DS(ON)
<2.8mΩ @ V
GS
=10V
●
Excellent gate charge x R
DS(on)
product
●
Very low on-resistance
R
DS(on)
●
175 °C operating temperature
●
Pb-free lead plating
●
100% UIS tested
Marking and pin assignment
Application
●
DC/DC Converter
●
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
NCEP85T25
Device
NCEP85T25
Device Package
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
85
±20
250
180
800
300
2
1700
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
I
DM
P
D
T
J
,T
STG
Wuxi NCE Power Semiconductor Co., Ltd
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NCEP85T25
R
θJC
0.5
℃
/W
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
t
rr
Qrr
Condition
V
GS
=0V I
D
=250μA
V
DS
=85V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=100A
V
DS
=10V,I
D
=100A
Min
85
-
-
2.5
-
-
-
-
-
-
Typ
Max
-
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
-
-
1
±100
4.5
-
90
11500
2990
105
28
73
86
33
165
56
35
2.8
-
-
-
-
-
-
-
-
V
DS
=40V,V
GS
=0V,
F=1.0MHz
V
DD
=40V,I
D
=100A
V
GS
=10V,R
G
=1.6Ω
-
-
-
-
-
-
-
-
V
DS
=40V,I
D
=100A,
V
GS
=10V
V
GS
=0V,I
F
= I
S
T
J
= 25°C, I
F
= I
S
di/dt = 100A/μs
(Note3)
1.2
-
115
320
250
V
A
nS
nC
-
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t
≤
10 sec.
3. Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25
℃
,V
DD
=42.5V,V
G
=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
Pb Free Product
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NCEP85T25
Test Circuit
1) E
AS
test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Pb Free Product
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Typical Electrical and Thermal Characteristics
NCEP85T25
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 5 Gate Charge
I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
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Pb Free Product
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NCEP85T25
Power Dissipation (W)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
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