电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

TS10B06GHC2G

产品描述Bridge Rectifier Diode,
产品类别分立半导体    二极管   
文件大小201KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 选型对比 全文预览

TS10B06GHC2G概述

Bridge Rectifier Diode,

TS10B06GHC2G规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性UL RECOGNIZED
最小击穿电压800 V
外壳连接ISOLATED
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
JESD-30 代码R-PSFM-T4
最大非重复峰值正向电流150 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
参考标准AEC-Q101
最大重复峰值反向电压800 V
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

下载PDF文档
TS10B01G - TS10B07G
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 1000V Glass Passivated Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- High case dielectric strength of 2000V
RMS
- Reliable low cost construction
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TS4B
MECHANICAL DATA
Case:
TS4B
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
5 in-lbs maximum
Weight:
4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@5A
@ 10 A
Maximum reverse current @ rated V
R
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
TS10B TS10B TS10B TS10B TS10B TS10B TS10B
01G
50
35
50
02G
100
70
100
03G
200
140
200
04G
400
280
400
10
150
93
1.0
1.1
10
500
1.4
- 55 to +150
- 55 to +150
05G
600
420
600
06G
800
560
800
07G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
I
R
R
θJC
T
J
T
STG
μA
°C/W
°C
°C
Document Number: DS_D1311041
Version: H15

TS10B06GHC2G相似产品对比

TS10B06GHC2G TS10B02GHX0G TS10B03GHC2G TS10B07GHC2G TS10B07GHD2G TS10B07GHX0G TS10B06GHD2G TS10B06GHX0G
描述 Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode,
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compliant compliant compliant compliant compliant compliant compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
最小击穿电压 800 V 100 V 200 V 1000 V 1000 V 1000 V 800 V 800 V
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
最大非重复峰值正向电流 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A
元件数量 4 4 4 4 4 4 4 4
相数 1 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
参考标准 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
最大重复峰值反向电压 800 V 100 V 200 V 1000 V 1000 V 1000 V 800 V 800 V
表面贴装 NO NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
包装说明 - - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2100  2599  158  1573  2514  43  53  4  32  51 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved