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BYG10M-HE3/TR

产品描述DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode
产品类别分立半导体    二极管   
文件大小90KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
下载文档 详细参数 全文预览

BYG10M-HE3/TR概述

DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode

BYG10M-HE3/TR规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码DO-214AC
包装说明ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN
针数2
Reach Compliance Codeunknown

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BYG10D thru BYG10Y
www.vishay.com
Vishay General Semiconductor
Standard Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated junction
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AC (SMA)
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
1.5 A
200 V to 1600 V
30 A
1.0 μA
1.15 V
20 mJ
150 °C
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
E
R
T
J
max.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
• BYG10Y for commercial grade only
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C (for BYG10D thru BYG10M)
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG10D
BYG10D
200
BYG10G
BYG10G
400
BYG10J
BYG10J
600
1.5
30
BYG10K
BYG10K
800
BYG10M
BYG10M
1000
BYG10Y
BYG10Y
1600
V
A
A
UNIT
20
- 55 to + 150
mJ
°C
Revision: 21-Dec-11
Document Number: 88957
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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