Midium Power Transistors (50V / 3A)
MP6X13
Structure
NPN Silicon epitaxial planar transistor
Dimensions
(Unit : mm)
Features
1) Low saturation voltage
V
CE (sat)
= 0.35V (Max.) (I
C
/ I
B
= 1A / 50mA)
2) High speed switching
(1)
(2)
(3)
(4)
(5)
(6)
Tr.1
Tr.1
Tr.2
Tr.2
Tr.2
Tr.1
Emitter
Base
Collector
Emitter
Base
Collector
Applications
Low Frequency Amplifier Driver
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
MPT6
TR
1000
Inner circuit
(6)
(5)
(4)
Absolute maximum ratings
(Ta = 25C)
<It
is the same ratings for the Tr.1 and Tr.2>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
*1 Pw=10ms, 1Pulse
*2 Mounted on a 40 x 40 x 0.7[mm ] ceramic board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
P
D
T
j
T
stg
*1
*2
*2
Limits
50
50
6
3
6
2.0
1.4
150
-55 to 150
Unit
V
V
V
A
A
W/Total
W/Element
C
C
(1) Tr.1
(2) Tr.1
(3) Tr.2
(4) Tr.2
(5) Tr.2
(6) Tr.1
Emitter
Base
Collector
Emitter
(1)
Base
Collector
(2)
(3)
Continuous
Pulsed
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.11 - Rev.A
MP6X13
Electrical characteristics
(Ta = 25C)
<It
is the same characteristics for the Tr.1 and Tr.2>
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
*1
V
CE(sat)
Data Sheet
Min.
50
50
6
-
-
-
180
-
-
-
-
-
Typ.
-
-
-
-
-
130
-
320
13
50
450
80
Max.
-
-
-
1
1
350
450
-
-
-
-
-
Unit
V
V
V
A
A
-
MHz
pF
ns
ns
ns
Conditions
I
C
= 1mA
I
C
= 100μA
I
E
= 100μA
V
CB
= 50V
V
EB
= 4V
V
CE
= 3V, I
C
= 50mA
V
CE
= 10V
I
E
=-500mA, f=100MHz
V
CB
= 10V, I
E
=0A
f=1MHz
I
C
= 1.5A, I
B1
= 150mA,
_
I
B2
=-150mA, V
CC
~
10V
mV I
C
= 1A, I
B
= 50mA
h
FE
f
T
*1
C
ob
t
on
*
2
t
stg
*
2
t
f
*
2
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©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.11 - Rev.A
MP6X13
3.0mA
5mA
0.5
Fig.1 Typical Output Characteristics
2.5mA
2.0mA
Data Sheet
Fig.2 DC Current Gain vs. Collector Current ( I )
1000
Ta=25°C
0.4
COLLECTOR CURRENT : I
C
[A]
DC CURRENT GAIN : h
FE
1.5mA
0.3
1.0mA
0.2
100
V
CE
=5V
3V
0.1
0.5mA
Ta=25°C
0.0
0
0.5
1
1.5
2
10
1
10
100
1000
10000
COLECTOR TO EMITTER VOLTAGE :V
CE
[V]
Fig3. DC Current Gain vs. Collector Current ( II )
1000
COLLECTOR SATURATION VO
OLTAGE : V
CE
(sat)[V]
V
CE
=3V
1
Ta=25°C
COLLECTOR CURRENT : I
C
[mA]
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current ( I )
DC CURRENT GAIN : h
FE
G
0.1
100
Ta=125°C
75°C
25°C
-40°C
0.01
I
C
/I
B
=50
20
10
10
1
10
100
1000
10000
0.001
1
10
100
1000
10000
COLLECTOR CURRENT : I
C
[mA]
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current ( II )
1
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)[V]
COLLECTOR CURRENT : I
C
[mA]
Fig.6 Ground Emitter Propagation Characteristics
10000
V
CE
=3V
0.1
COLLECTOR CURRENT : I
C
[mA]
1000
Ta=125°C
100
75°C
25°C
-40°C
0.01
Ta=125°C
75°C
25°C
-40°C
I
C
/I
B
=20
10
0.001
1
10
100
1000
10000
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
COLLECTOR CURRENT : I
C
[mA]
BASE TO EMITTER VOLTAGE : V
BE
[V]
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©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.11 - Rev.A
MP6X13
Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
1000
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
100
Cib
Data Sheet
Fig.8 Gain Bandwidth Product vs. Emitter Current
1000
Ta=25°C
V
CE
=10V
TRANSITION FREQUENCY : fT[MHz]
100
10
Cob
1
0.1
1
10
100
10
10
100
EMITTER CURRENT : I
E
[mA]
1000
COLLECTOR - BASE VOLTAGE : V
CB
(V)
EMITTER - BASE VOLTAGE : V
EB
(V)
Fig.9 Safe Operating Area
10
1ms
COLLECTOR CURR
RENT : I
C
[A]
10ms
1
100ms
DC
（Mounted on a
ceramic board）
0.1
Ta=25℃
When on element operated
Single non repetitive pulse
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : V
CE
[V]
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.11 - Rev.A
MP6X13
Switching time test circuit
Data Sheet
R
L
=7.5Ω
V
IN
I
B1
I
C
I
B2
V
CC
_
~
10V
Pw
_
Pw
~
50μs
DUTY CYCLE
1%
I
B1
BASE CURENT WAVEFORM
I
B2
COLLECTOR CURRENT
WAVEFORM
t
on
90%
t
stg
t
f
I
C
10%
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©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.11 - Rev.A
PCB设计
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