HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Features
Saturated Output Power: +37 dBm @ 23% PAE
High Output IP3: +44.5 dBm
High Gain: 28 dB
DC Supply: +7V @ 2400 mA
No External Matching Required
Die Size: 3.24 x 4.5 x 0.1 mm
Typical Applications
The HMC950 is ideal for:
• Point-to-Point Radios
3
AMPLIFIERS - LINEAR & POWER - CHIP
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Functional Diagram
General Description
The HMC950 is a four stage GaAs pHEMT MMIC
4 Watt Power Amplifier which operates between 12
and 16 GHz. The HMC950 provides 28 dB of gain,
+37 dBm of saturated output power, and 23% PAE
from a +7V power supply. The HMC950 exhibits
excellent linearity and is optimized for high capacity
point to point and point to multi-point radio systems.
It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT
transmitters as well as SATCOM applications. The
amplifier configuration and high gain make it an
excellent candidate for last stage signal amplification
before the antenna. All data is taken with the chip in a
50 Ohm test fixture connected via (2) 0.025 mm (1 mil)
diameter wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications,
T
A
= +25° C
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept
Total Supply Current (Idd)
(IP3)
[2]
Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = Vdd6 = Vdd7 = Vdd8 = +7V, Idd = 2400mA
[1]
Min.
Typ.
12 - 13
26
28
0.056
17
17
34.5
36.5
37
43
2400
34.5
26
Max.
Min.
Typ.
13 - 16
28
0.056
16
17
36.5
37
44.5
2400
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 2400 mA typical.
[2] Measurement taken at +7V @ 2400 mA, Pout / Tone = +24 dBm
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Gain vs. Temperature
36
Broadband Gain &
Return Loss vs. Frequency
40
30
RESPONSE (dB)
20
32
S21
S11
S22
GAIN (dB)
10
0
-10
-20
-30
10
11
12
28
3
+25C
+85C
-55C
24
20
16
13
14
15
FREQUENCY (GHz)
16
17
18
11
12
13
14
15
16
17
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C
+85C
-55C
Output Return Loss vs. Temperature
0
-4
RETURN LOSS (dB)
-8
-12
-16
-20
-24
+25C
+85C
-55C
-4
RETURN LOSS (dB)
-8
-12
-16
-20
11
12
13
14
15
16
17
FREQUENCY (GHz)
11
12
13
14
15
16
17
FREQUENCY (GHz)
P1dB vs. Temperature
42
+25C
+85C
-55C
P1dB vs. Supply Voltage
42
5V
6V
7V
40
P1dB (dBm)
40
P1dB (dBm)
38
38
36
36
34
34
32
12
13
14
FREQUENCY (GHz)
15
16
32
12
13
14
FREQUENCY (GHz)
15
16
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3-2
AMPLIFIERS - LINEAR & POWER - CHIP
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Psat vs. Supply Voltage
42
Psat vs. Temperature
42
+25C
+85C
-55C
P1dB (dBm)
38
P1dB (dBm)
3
AMPLIFIERS - LINEAR & POWER - CHIP
40
40
5V
6V
7V
38
36
36
34
34
32
12
13
14
FREQUENCY (GHz)
15
16
32
12
13
14
FREQUENCY (GHz)
15
16
P1dB vs. Supply Current (Idd)
42
40
38
36
34
32
30
12
13
14
FREQUENCY (GHz)
15
16
1600mA
1800mA
2000mA
2200mA
2400mA
Psat vs. Supply Current (Idd)
42
40
38
36
34
32
30
12
13
14
FREQUENCY (GHz)
15
16
1600mA
1800mA
2000mA
2200mA
2400mA
P1dB (dBm)
Output IP3 vs.
Temperature, Pout/Tone = +24 dBm
55
+25C
+85C
-55C
Output IP3 vs.
Supply Current, Pout/Tone = +24 dBm
55
1600mA
1800mA
2000mA
2200mA
2400mA
50
IP3 (dBm)
IP3 (dBm)
12
13
14
FREQUENCY (GHz)
15
16
P1dB (dBm)
50
45
45
40
40
35
35
12
13
14
FREQUENCY (GHz)
15
16
3-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Output IM3 @ Vdd = +5V
80
70
Output IP3 vs.
Supply Voltage, Pout/Tone = +24 dBm
55
50
IP3 (dBm)
45
IM3 (dBc)
5V
6V
7V
60
50
40
30
20
10
12.5 GHz
13.5 GHz
14.5 GHz
15.5 GHz
3
10
12
14
16
18
20
22
24
26
28
40
35
12
13
14
FREQUENCY (GHz)
15
16
0
Pout/TONE (dBm)
Output IM3 @ Vdd = +6V
80
70
60
IM3 (dBc)
Output IM3 @ Vdd = +7V
80
70
60
IM3 (dBc)
50
40
30
20
10
0
12.5 GHz
13.5 GHz
14.5 GHz
15.5 GHz
50
40
30
20
10
0
10
12
14
16
18
20
22
24
26
28
Pout/TONE (dBm)
12.5 GHz
13.5 GHz
14.5 GHz
15.5 GHz
10
12
14
16
18
20
22
24
26
28
Pout/TONE (dBm)
Power Compression @ 14 GHz
40
Pout (dBm), GAIN (dB), PAE (%)
35
30
25
20
15
10
5
0
-12
Pout
Gain
PAE
Reverse Isolation vs. Temperature
0
-10
-20
ISOLATION (dB)
-30
-40
-50
-60
-70
-80
+25C
+85C
-55C
-9
-6
-3
0
3
6
9
12
15
16
18
20
FREQUENCY (GHz)
22
24
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
3-4
AMPLIFIERS - LINEAR & POWER - CHIP
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Gain & Power vs.
Supply Voltage @ 14 GHz
50
Gain (dB), P1dB (dBm), Psat (dBm)
45
40
35
30
25
20
Gain & Power vs.
Supply Current @ 14 GHz
50
Gain (dB), P1dB (dBm), Psat (dBm)
45
40
35
30
25
20
1600
Gain
P1dB
Psat
3
AMPLIFIERS - LINEAR & POWER - CHIP
Gain
P1dB
Psat
1800
2000
Idd (mA)
2200
2400
5
5.5
6
Vdd (V)
6.5
7
Power Dissipation
20
18
POWER DISSIPATION (W)
16
14
12
10
8
6
4
2
0
-12
-9
-6
-3
0
3
6
9
12
15
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 275 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+8V
+27 dBm
150 °C
17.9 W
3.63 °C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+5.0
+6.0
+7.0
Idd (mA)
2400
2400
2400
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 2400 mA at +7V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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