MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPF910/D
TMOS Switching
N–Channel — Enhancement
2
GATE
MPF910
3 DRAIN
1 SOURCE
MAXIMUM RATINGS
Rating
Drain – Source Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp
≤
50
µs)
Drain Current – Continuous(1)
– Pulsed(2)
Total Device Dissipation @ TA = 25°C
Derate above 25°C
MPF910
Total Device Dissipation @ TC = 25°C
Derate above 25°C
MFE910
Operating and Storage Junction
Temperature Range
Symbol
VDS
VGS
VGSM
ID
IDM
PD
PD
TJ, Tstg
Value
60
±
20
±
40
0.5
1.0
1.0
8.0
6.25
50
– 65 to +150
Unit
Vdc
Vdc
Vpk
Adc
Watts
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–05, STYLE 22
TO–92 (TO–226AE)
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 40 V, VGS = 0)
Gate Reverse Current
(VGS = 10 V, VDS = 0)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100
µA)
IDSS
IGSS
V(BR)DSS
—
—
60
0.1
0.01
90
10
10
—
µAdc
nAdc
Vdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 500 mA)
On–State Drain Current
(VDS = 25 V, VGS = 10 V)
Forward Transconductance
(VDS = 15 V, ID = 500 mA)
VGS(th)
VDS(on)
ID(on)
gfs
0.3
—
500
100
1.5
—
—
—
2.5
2.5
—
—
Vdc
Vdc
mA
mmhos
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%.
v
v
TMOS is a registered trademark of Motorola, Inc.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
MPF910
RESISTIVE SWITCHING
+25 V
23
Ω
Pulse Generator
To Sampling Scope
50
Ω
Input
Vin
40 pF
50
Ω
1.0 MΩ
20 dB
50
Ω
Attenuator
Vout
50
Ω
Figure 1. Switching Test Circuit
ton
90%
Output Vout
Inverted
50%
Input Vin
10%
Pulse
Width
toff
90%
10%
90%
50%
10 v
Figure 2. Switching Waveforms
2.0
V GS(th) , THRESHOLD VOLTAGE
1.6
1.2
0.8
0.4
0
–50
VDS = VGS
ID = 1.0 mA
2.0
I D(on), DRAIN CURRENT (AMPS)
VGS = 10 V
1.6
1.2
0.8
0.4
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
100
0
50
TJ, JUNCTION TEMPERATURE
150 (°C)
0
1.0
2.0
3.0
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
4.0
Figure 3. VGS(th) Normalized versus Temperature
Figure 4. On–Region Characteristics
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPF910
2.0
I D(on), DRAIN CURRENT (AMPS)
1.6
1.2
7.0 V
VGS = 10 V
100
80
60
40
Ciss
VGS = 10 V
8.0 V
0.8
0.4
6.0 V
5.0 V
4.0 V
C, CAPACITANCE (pF)
9.0 V
20
Coss
Crss
0
20
10
30
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
40
0
40
50
60
10
20
30
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristics
Figure 6. Capacitance versus
Drain–to–Source Voltage
V DS , DRAIN–SOURCE VOLTAGE (VOLTS)
10
5.0
VGS = 10 V
ID = 1.5 A
1.0 A
0.5 A
1.0
0.5
0.4
0.3
0.2
0.1
–50
–30 –10
10 30 50 70 90 110 130 150
TJ, JUNCTION TEMPERATURE
Figure 7. On Voltage versus Temperature
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MPF910
PACKAGE DIMENSIONS
A
R
P
F
L
B
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
X X
G
H
V
1 2 3
D
J
SECTION X–X
N C
N
CASE 029–05
(TO–226AE)
ISSUE AD
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
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4
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MPF910/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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