MIG75Q201H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75Q201H
High Power Switching Applications
Motor Control Applications
l
Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current,
under-voltage & over-temperature) in one package.
l
The electrodes are isolated from case.
l
High speed type IGBT
: V
CE (sat)
= 3.5 V (Max)
toff = 2.5 µs (Max)
trr = 0.21 µs (Max)
l
Package dimensions : TOSHIBA 2-136A1A
l
Weight :
Equivalent Circuit
1
2001-05-29
MIG75Q201H
Maximum Ratings
(T
j
= 25°C )
Stage
Characteristic
Supply voltage
Collector-emitter voltage
Inverter
Collector current
Forward current
Collector power dissipation
Junction temperature
Supply voltage
Collector-emitter voltage
Collector current
Brake
Reverse voltage
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Control
Input voltage
Fault output voltage
Fault output current
Operating temperature
Module
Storage temperature range
Isolation voltage
Screw torque
AC 1 minute
M5
Condition
P-N power terminal
―
Tc = 25°C, DC
Tc = 25°C, DC
Tc = 25°C
―
P-N power terminal
―
Tc = 25°C, DC
―
Tc = 25°C, DC
Tc = 25°C
―
V
D
-GND terminal
IN-GND terminal
FO-GND (L) terminal
FO sink current
―
―
Symbol
V
CC
V
CES
I
C
I
F
P
C
T
j
V
CC
V
CES
I
C
V
R
I
F
P
C
T
j
V
D
V
IN
V
FO
I
FO
TC
T
stg
V
ISO
―
Ratings
900
1200
75
75
600
150
900
1200
50
1200
50
400
150
20
20
20
14
−20
~ +100
−40
~ +125
2500
3
Unit
V
V
A
A
W
°C
V
V
A
V
A
W
°C
V
V
V
mA
°C
°C
V
Nm
Electrical Characteristics
(T
j
= 25°C)
a.
Inverter Stage
Characteristic
Collector cut-off current
Collector-emitter saturation
voltage
Forward voltage
Symbol
I
CEX
Test Condition
V
CE
= 1200V
V
D
= 15 V, I
C
= 75 A
V
IN
= 3 V
→
0 V
I
F
= 75A
V
CC
= 600 V, I
C
= 75 A
V
D
= 15 V, V
IN
= 3 V
Inductive load
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
―
―
―
―
―
0.8
0V
(Note 1)
―
―
―
―
Typ.
―
―
2.7
2.6
2.0
1.5
0.3
0.14
1.5
0.25
Max
1
20
3.5
―
2.5
2.2
0.6
0.21
2.5
0.5
µs
Unit
mA
V
CE (sat)
V
F
t
on
t
c (on)
V
V
Switching time
t
rr
t
off
t
c (off)
2
2001-05-29
MIG75Q201H
b.
Brake Stage
Characteristic
Collector cut-off current
Collector-emitter saturation
voltage
Reverse current
Forward voltage
Symbol
I
CEX
Test Condition
V
CE
= 1200V
V
D
= 15 V, I
C
= 50 A
V
IN
= 3 V
→
0 V
VR = 1200 V
I
F
= 50A
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
―
―
―
―
―
―
―
0.8
V
CC
= 600 V, I
C
= 50 A
V
D
= 15 V, V
IN
= 3 V
Inductive load
0V
(Note 1)
―
―
―
―
Typ.
―
―
2.7
2.6
―
―
2.0
1.5
0.5
0.30
1.5
0.3
Max
1
20
3.5
―
1
20
2.7
2.2
1.0
0.45
2.5
0.6
µs
Unit
mA
V
CE (sat)
V
I
R
V
F
t
on
t
c (on)
mA
V
Switching time
t
rr
t
off
t
c (off)
c.
Control Stage
(T
j
= 25°C)
Characteristic
Symbol
I
D (H)
I
D (L)
V
IN (on)
I
FO (on)
I
FO (off)
OC
V
D
= 15 V
V
D
= 15 V, I
C
= 75 mA
―
Test Condition
Min
―
―
0.9
8
―
105
70
157
105
―
111
93
―
V
D
= 15 V
11.3
11.8
1
Typ.
20
80
1.1
10
―
150
100
225
150
10
118
100
12.0
12.5
2
Max
30
120
1.3
12
1
―
―
―
―
―
125
107
12.7
13.2
3
Unit
mA
V
mA
Control circuit
current
High side
Low side
Input-on signal voltage
Fault output
current
Over current
protection
trip level
Short circuit
protection
trip level
Protection
Normal
Inverter
Brake
Inverter
Brake
V
D
= 15 V, T
j
= 125°C
A
SC
t
off (OC)
OT
OTr
UV
UVr
t
FO
V
D
= 15 V, T
j
= 125°C
V
D
= 15 V
Case temperature
A
µs
°C
Over current cut-off time
Over
temperature
protection
Control supply
under voltage
protection
Trip level
Reset level
Trip level
Reset level
V
ms
Fault output pulse width
3
2001-05-29
MIG75Q201H
d.
Thermal Resistance (T
j
= 25°C)
Characteristic
Symbol
Test Condition
Inverter IGBT
Junction to case thermal
resistance
R
th (j-c)
Inverter FRD
Brake IGBT
Brake FRD
Case to fin thermal
resistance
R
th (c-f)
Compound is applied
Min
―
―
―
―
―
Typ.
―
―
―
―
0.04
Max
0.208
0.50
0.312
1.00
―
°C / W
°C / W
Unit
Note 1: Switching time test circuit & timing chart
4
2001-05-29
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