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MPSA56D26Z: 产品描述Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN; 产品类别分立半导体晶体管; 文件大小1MB，共15页; 制造商Fairchild; 官网地址http://www.fairchildsemi.com/; 标准

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MPSA56D26Z概述

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

MPSA56D26Z规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Fairchild
零件包装代码	TO-92
包装说明	CYLINDRICAL, O-PBCY-T3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.5 A
集电极-发射极最大电压	80 V
配置	SINGLE
最小直流电流增益 (hFE)	100
JEDEC-95代码	TO-92
JESD-30 代码	O-PBCY-T3
JESD-609代码	e3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	PNP
最大功率耗散 (Abs)	0.625 W
认证状态	Not Qualified
表面贴装	NO
端子面层	Matte Tin (Sn)
端子形式	THROUGH-HOLE
端子位置	BOTTOM
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	50 MHz

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MPSA56/MMBTA56/PZTA56 PNP General Purpose Ampliﬁer

February 2006

MPSA56/MMBTA56/PZTA56

PNP General Purpose Ampliﬁer

Description

This device is designed for general purpose ampliﬁer

applications at collector currents to 300mA. Sourced

from Process 73

Absolute Maximum Ratings*

= 25

C unless otherwise speciﬁed.

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current – Continuous

Operating and Storage Junction Temperature Range

Symbol

CES

CBO

EBO

, T

STG

Value

-80

-4.0

-500

-55 to +150

Unit

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3. All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

= 25°C unless otherwise noted.

Max

Characteristic

Total Device Dissipation,

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Symbol

MPSA56

625

5.0

83.3

200

*MMBTA56

350

2.8

357

**PZTA56

1,000

8.0

125

Units

mW/°C

°C/W

*Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06."

**Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6 cm

Packages

MPSA56

MMBTA56

PZTA56

TO-92

SOT-23

Mark: 2G

SOT-223

www.fairchildsemi.com

MPSA56/MMBTA56/PZTA56 Rev. 1.0.2

MPSA56D26Z相似产品对比

	MPSA56D26Z	MPSA56D75Z	MPSA56RA-F40	MPSA56J18Z	MPSA56-D11Z	MMBTA56D87Z	MPSA56D27Z	MPSA56D74Z	MPSA56-L98Z	MPSA56-D28Z
描述	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Transistor	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Transistor	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Transistor	Transistor
包装说明	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	,	CYLINDRICAL, O-PBCY-T3	,	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	,	,
Reach Compliance Code	compliant	compliant	unknown	unknown	unknown	compliant	compliant	compliant	unknown	unknown
最大集电极电流 (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
配置	SINGLE	SINGLE	Single	SINGLE	Single	SINGLE	SINGLE	SINGLE	Single	Single
最小直流电流增益 (hFE)	100	100	50	100	50	100	100	100	50	50
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	0.625 W	0.625 W	0.625 W	0.625 W	0.625 W	0.225 W	0.625 W	0.625 W	0.625 W	0.625 W
表面贴装	NO	NO	NO	NO	NO	YES	NO	NO	NO	NO
标称过渡频率 (fT)	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz
是否Rohs认证	符合	符合	-	不符合	不符合	符合	符合	符合	不符合	不符合
厂商名称	Fairchild	-	-	-	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild
零件包装代码	TO-92	TO-92	-	TO-92	-	SOT-23	TO-92	TO-92	-	-
针数	3	3	-	3	-	3	3	3	-	-
ECCN代码	EAR99	EAR99	-	EAR99	-	EAR99	EAR99	EAR99	-	-
集电极-发射极最大电压	80 V	80 V	-	80 V	-	80 V	80 V	80 V	-	-
JESD-30 代码	O-PBCY-T3	O-PBCY-T3	-	O-PBCY-T3	-	R-PDSO-G3	O-PBCY-T3	O-PBCY-T3	-	-
JESD-609代码	e3	e3	-	e0	e0	e3	e3	e3	e0	e0
元件数量	1	1	-	1	-	1	1	1	-	-
端子数量	3	3	-	3	-	3	3	3	-	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
封装形状	ROUND	ROUND	-	ROUND	-	RECTANGULAR	ROUND	ROUND	-	-
封装形式	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	-	SMALL OUTLINE	CYLINDRICAL	CYLINDRICAL	-	-
认证状态	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-	-
端子面层	Matte Tin (Sn)	Matte Tin (Sn)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	-	GULL WING	THROUGH-HOLE	THROUGH-HOLE	-	-
端子位置	BOTTOM	BOTTOM	-	BOTTOM	-	DUAL	BOTTOM	BOTTOM	-	-
晶体管应用	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	-
晶体管元件材料	SILICON	SILICON	-	SILICON	-	SILICON	SILICON	SILICON	-	-

MPSA56D26Z

MPSA56D26Z概述

MPSA56D26Z规格参数

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