RF Power Amplifier IC
for 2.4 GHz ISM
MA02303GJ
Features
•
Perfect for 802.11B, HOP, SWAP, HOMERF,
Bluetooth, WDECT, MDS, MMDS
•
Single Positive Supply
•
Power Added Efficiency As High As 55 Percent
•
IP
3
= +43 dBm
•
Output Power 26.5 dBm @ 3.3 V
•
Output Power 28.5 dBm @ 5.0 V
•
100 Percent Duty Cycle
•
2200 to 2600 MHz Operation
•
8 Pin MSOP Full Downset Plastic Package
•
Operates Over Wide Ranges of Supply Voltage
•
Self-Aligned MSAG
®
-Lite MESFET Process
Functional Schematic
PIN 1
PIN 8
Description
The MA02303GJ is an RF power amplifier based on
M/A-COM’s Self-Aligned MSAG
®
MESFET Process.
This product is designed for use in 2.4 GHz ISM
products. For booster applications, it features a low
power “bypass” mode and output power control
PIN Configuration
PIN
1
2
3
4
V
D1
RF
IN
/ V
G1
GND
V
G2
V
G3
GND
RF
OUT
/ V
D3
V
D2
Function
Description
Drain voltage, first stage
RF input and drain
voltage for first stage
Ground
Gate bias voltage,
second stage
Gate bias voltage,
third stage
Ground
RF output and drain
voltage for third stage
Drain voltage for
second stage
Ordering Information
Part Number
MA02303GJ-R7
MA02303GJ-R13
MA02303GJ-SMB
Description
7 inch, 1000 piece reel
13 inch, 3000 piece reel
Sample test board
5
6
7
8
Package bottom is electrical and thermal ground
Absolute Maximum Ratings
1
Rating
DC Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature
Operating Temperature
Moisture Sensitivity
Symbol
V
DD
P
IN
T
J
T
STG
T
OPER
Value
5.5
10
150
-40 to +150
-40 to +100
Unit
V
mW
°C
°C
°C
JEDEC Level 1
1. Beyond these limits, the device may be damaged or device reliability
reduced. Functional operation at absolute-maximum-rated conditions is
not implied.
RF Power Amplifier IC for 2.4 GHz ISM
MA02303GJ
Electrical Specifications: V
DD
= +3.3 V, P
IN
= -2 dBm, Duty Cycle = 100 %,
T
S
= 37 °C (Note 1), measured on evaluation board shown in Figure 11.
Characteristic
Frequency Range
Output Power, ƒ
= 2450 MHz
Power Added Efficiency, ƒ
= 2450 MHz
Current, ƒ
= 2450 MHz
Current for linear operation, ƒ
= 2450 MHz,
P
IN
adjusted for P
OUT
= 20.0 dBm +/- 0.2 dBm
Symbol
ƒ
P
OUT
η
I
DD
I
DD
Min.
2400
25.3
Typ.
Max.
2500
Unit
MHz
dBm
%
26.5
51
265
—
415
415
mA
mA
Gain, ƒ
= 2450 MHz,
P
IN
adjusted for P
OUT
= 20.0 dBm +/- 0.2 dBm
G
29.5
dB
Harmonics, ƒ
= 2450 MHz
Input VSWR, ƒ
= 2450 MHz
Off Isolation
(V
DD
=0 V)
Thermal Resistance, junction to package bottom
Third Order Intercept Point
Load Mismatch
(V
DD
= 5.5 V, VSWR = 8:1, P
IN
= 0 dBm)
Stability (P
IN
= -2 to 2 dBm, V
DD
= 0-5.5 V, Load VSWR = 5:1,
all phases)
2ƒ, 3ƒ, 4 ƒ
—
—
R
TH
IP
3
—
—
-40
—
40
25
43
2.0:1
dBc
—
dB
°C/W
dBm
No Degradation in Power Output
All non-harmonically related outputs more
than 60 dB below desired signal
1. T
S
is the temperature measured at the soldering point of the downset paddle on the bottom of the IC.
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
2
RF Power Amplifier IC for 2.4 GHz ISM
Typical Characteristics
(Measured data from process nominal devices)
Output Power, Drain Current and
Efficiency vs. Input Power
60
300
12
V
MA02303GJ
Output Power, and Drain Current vs. Input
Power for Low Current “Bypass” Mode
(V
DD1,2
= 3.3 V, V
DD3
= 0.0 V)
300
DD1, 2
= 3.3 V, V
(dBm), PAE (%)
(dBm), PAE (%)
50
I
250
DD
10
8
6
4
2
0
-10
PAE
P
DD3
= 0.0 V
F = 2450 MHz
250
(mA)
30
20
10
0
-10
PAE
P
V
DD1, 2, 3
150
100
= 3.3 V
OUT
B
B
I
DD
I
100
50
-5
0
0
5
OUT
P
F = 2450 MHz
-5
0
0
5
P (dBm)
IN
P
50
OUT
P (dBm)
IN
Output Power, Drain Current and Efficiency
vs. Supply Voltage
60
0.35
PAE
Output Power, Drain Current and Efficiency
vs. V
DD1
for Power Control
30
25
600
500
P
OUT
(dBm), PAE (%)
50
40
0.30
(A)
P
(dBm)
0.25
OUT
20
15
10
5
0
0.0
0.5
I
I
DD1
DD2
400
300
200
100
I
DD
0.20
0.15
0.10
5
0.05
OUT
OUT
P
P
10
0
1
IN
= -2 dBm
P
P
20
OUT
PAE
I
DD
F = 2450 MHz
2
3
4
1.0
1.5
2.0
2.5
3.0
0
P (dBm)
IN
V
DD1
(V)
Output Power, Input Return Loss and
Efficiency vs. Frequency
60
0
-5
35
30
Output Power and Drain Current vs.
Temperature at V
DD
= +3.0 V
350
300
250
I
P
P
V
IN
DD
(dBm), PAE (%)
50
40
30
20
10
0
2200
P = - 2 dBm
IN
IRL
B
(dB)
OUT
20
15
10
5
0
-50
= - 2 dBm
- 3.0 V
200
150
OUT
-15
-20
IRL
P
OUT
OUT
100
50
0
S
P
V
DD
= 3.3 V
-25
2400
2500
-30
2600
DD
F = 2450 MHz
2300
FREQUENCY (MHz)
Temperature, T ( C)
o
50
0
100
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
3
I
DD
(mA)
PAE
P
-10
B
(dBm)
25
I
DD1
,I
I
DD2
30
B
DD
(mA)
I
DD
OUT
DD
150
(mA)
40
200
200
RF Power Amplifier IC for 2.4 GHz ISM
Typical Characteristics (Cont’d)
(Measured data from process nominal devices)
Output Power and Drain Current vs.
Temperature at V
DD
= +3.2 V
35
30
350
300
35
30
MA02303GJ
Output Power and Drain Current vs.
Temperature at V
DD
= +3.6V
350
300
250
I
P
P
V
IN
DD
(dBm)
(mA)
(dBm)
25
20
15
10
5
0
-50
P
V
IN
250
I
P
= - 2 dBm
- 3.2 V
DD
25
20
15
10
5
0
-50
= - 2 dBm
- 3.6 V
200
150
200
150
OUT
OUT
DD
P
100
50
0
S
P
OUT
OUT
I
100
50
0
S
DD
DD
F = 2450 MHz
F = 2450 MHz
50
o
0
100
50
o
0
100
Temperature, T ( C)
Temperature, T ( C)
Harmonics
Maximum Operating Temperature (Ts) to
Maintain <150 °C Junction Temperature.
6
ƒ
0
= 2 4 5 0 M H z
V
D D
30
OUT
25
20
15
P
OUT
(dBm)
10
5
0
-5
-1 0
-1 5
-2 0
ƒ0
2ƒ0
3ƒ0
P
IN
= -2 d B m
= 3 .3 V
5
4
3
2
1
0
-50
0
50
100
o
S
P
DISS
(W) = I
DD
*V
DD3
-P
4ƒ0
150
Temperature T ( C)
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
4
I
DD
(mA)
B
B
RF Power Amplifier IC for 2.4 GHz ISM
Mechanical Data
MA02303GJ
Figure 11 Component layout and printed circuit drawing for evaluation board (60 mil GETEK
board).
Application Information
+V
DD
T7
R1
T1
C1
T2
L1
T3
C2
C3
C4
3
8
T8
L2
1
RF
IN
RF
OUT
T5
C5
T6
C6
2
7
3
6
T4
4
5
Full-Downset Paddle
To Board Ground
Figure 12 Evaluation Board Schematic
List of Components
Discrete Components
Transmission Line Lengths*
C1 – C4 = 100 pF multilayer ceramic chip capacitor
(Dielectric Labs C11AH101K5TXL)
C5 = 2.0 pF multilayer ceramic chip capacitor
(Dielectric Labs C11AH2R0BTXL)
C6 = 1.2 pF multilayer ceramic chip capacitor
(Dielectric Labs C11AH1R2B5TXL)
R1 = 300
Ω
chip resistor (P300ECT-ND)
L1 = 1.8 nH chip inductor (Toko TKS235CT-ND)
L2 = 27 nH chip inductor (Coilcraft 1008CS-270XKBB)
T1 = 0.15"
T2 = 0.21"
T3 = 0.11" (Not very critical)
T4 = 0.16"
T5 = 0.13"
T6 = 0.16"
T7 = 0.13" (Not very critical)
T8 = 0.077" (Not very critical)
T1, T2, T3, T5, T6 are 0.077" wide
T4, T7, and T8 are 0.026" wide
*The board material is 0.060" FR-4 (distance is between RF and GND) with a dielectric constant of
about 4.3 (standard FR-4)
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
5
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