Freescale Semiconductor
Technical Data
Document Number: MRF7P20040H
Rev. 2, 12/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1800 to
2200 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 32 Volts,
I
DQA
= 150 mA, V
GSB
= 1.5 Vdc, P
out
= 10 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability
on CCDF.
Frequency
2025 MHz
G
ps
(dB)
18.2
η
D
(%)
42.6
Output PAR
(dB)
7.3
ACPR
(dBc)
--34.8
MRF7P20040HR3
MRF7P20040HSR3
2010-
-2025 MHz, 10 W AVG., 32 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 3 dB Compression Point
≃
50 Watts CW
(1)
Features
•
Production Tested in a Symmetrical Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 15.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
42.4
0.17
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
CASE 465M-
-01, STYLE 1
NI-
-780-
-4
MRF7P20040HR3
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
MRF7P20040HSR3
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78°C, 10 W CW, 32 Vdc, I
DQA
= 150 mA, V
GSB
= 1.5 Vdc, 2017.5 MHz
Case Temperature 82°C, 40 W CW
(1)
, 32 Vdc, I
DQA
= 150 mA, V
GSB
= 1.5 Vdc, 2017.5 MHz
Symbol
R
θJC
Value
(3,4)
2.11
1.50
Unit
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select Documentation/-
Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
MRF7P20040HR3 MRF7P20040HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1A (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 33.5
μAdc)
Gate Quiescent Voltage
(V
DD
= 32 Vdc, I
DA
= 150 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.325 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2
0.1
2
2.7
0.24
2.7
3.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 32 Vdc, I
DQA
= 150 mA, V
GSB
= 1.5 Vdc, P
out
= 10 W Avg.,
f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
16
39
6.9
—
—
18.2
42.6
7.3
--34.8
--17.8
21
—
—
--30
--10
dB
%
dB
dBc
dB
Typical Performance
(3)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 32 Vdc, I
DQA
= 150 mA, V
GSB
= 1.5 Vdc,
2010--2025 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point, CW
(4)
IMD Symmetry @ 15 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 15 MHz Bandwidth @ P
out
= 10 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
(4)
1.
2.
3.
4.
P1dB
P3dB
IMD
sym
—
—
—
35
50
8
—
—
—
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
70
0.04
0.013
0.006
—
—
—
—
MHz
dB
dB/°C
dB/°C
Each side of device measured separately.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF7P20040HR3 MRF7P20040HSR3
2
RF Device Data
Freescale Semiconductor
V
GGA
V
DSA
C11
C15
C17
C13
R2
C7
C5
C
C9
R1
C1 C3
C2 C4
CUT OUT AREA
P
C10
C19
C6
C8
C12
C16
C18
C14
R3
MRF7P20040H/HS
Rev. 1
V
GGB
V
DSB
Figure 2. MRF7P20040HR3(HSR3) Test Circuit Component Layout
Table 5. MRF7P20040HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C2, C9, C10
C3, C4
C5, C6
C7, C8
C11, C12
C13, C14
C15, C16
C17, C18
C19
R1
R2, R3
PCB
Description
12 pF Chip Capacitors
2.4 pF Chip Capacitors
27 pF Chip Capacitors
1.1 pF Chip Capacitors
12 pF Chip Capacitors
2.2
μF,
50 V Chip Capacitors
4.7
μF,
50 V Chip Capacitors
10
μF,
50 V Chip Capacitors
0.8 pF Chip Capacitor
100
Ω,
1/4 W Chip Resistor
12
Ω,
1/4 W Chip Resistors
0.020″,
ε
r
= 3.5
Part Number
ATC600F120FT250XT
ATC600F2R4AT250XT
ATC600F270FT250XT
ATC600F1R1AT250XT
ATC100B120FT1500XT
C3225X7R1H225KT
GRM43ER61H475MA88L
GRM55DR61H106KA88L
ATC600F0R8AT250XT
CRCW12061000FKEA
CRCW120612R0FKEA
RO4350B
Manufacturer
ATC
ATC
ATC
ATC
ATC
TDK
Murata
Murata
ATC
Vishay
Vishay
Rogers
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
3
Single--ended
λ
λ
4
4
Quadrature combined
λ
4
Doherty
λ
2
λ
2
Push--pull
Figure 3.
Possible Circuit Topologies
MRF7P20040HR3 MRF7P20040HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
V
DD
= 32 Vdc, P
out
= 10 W (Avg.)
I
DQA
= 150 mA, V
GSB
= 1.5 Vdc
G
ps
η
D
, DRAIN
EFFICIENCY (%)
18.5
18
17.5
G
ps
, POWER GAIN (dB)
17
16.5
16 ACPR
15.5
15
14.5
14
13.5
1880
1900
PARC
46
44
42
40
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
38
--28
--30
ACPR (dBc)
--32
--34
--36
1940
1960
1980
2000
2020
--38
2040
η
D
IRL, INPUT RETURN LOSS (dB)
--14
--16
--18
--20
--22
--24
--1.8
--2
--2.2
--2.4
--2.6
--2.8
PARC (dB)
IRL
1920
f, FREQUENCY (MHz)
Figure 4. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 10 Watts Avg.
--10
--20
--30
IM3--U
--40
--50
IM7--U
--60
1
IM7--L
10
TWO--TONE SPACING (MHz)
100
IM5--U
IM5--L
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 32 Vdc, P
out
= 15 W (PEP), I
DQA
= 150 mA
V
GSB
= 1.5 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2017.5 MHz
IM3--L
Figure 5. Intermodulation Distortion Products
versus Two-
-Tone Spacing
18.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
18
G
ps
, POWER GAIN (dB)
17.5
17
16.5
16
15.5
1
0
--1
--2
--3
--4
--5
--1 dB = 5.48 W
--3 dB = 10.07 W
V
DD
= 32 Vdc, I
DQA
= 150 mA
PARC
V
GSB
= 1.5 Vdc, f = 2017.5 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
3
6
9
12
15
G
ps
--2 dB = 7.64 W
ACPR
48
η
D
,
DRAIN EFFICIENCY (%)
44
40
36
32
28
24
--26
--28
--30
--32
--34
--36
--38
ACPR (dBc)
η
D
P
out
, OUTPUT POWER (WATTS)
Figure 6. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
