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SA6.5CAB

产品描述Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, DO-15
产品类别分立半导体    二极管   
文件大小1MB,共6页
制造商Littelfuse
官网地址http://www.littelfuse.com
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SA6.5CAB概述

Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, DO-15

SA6.5CAB规格参数

参数名称属性值
是否无铅含铅
厂商名称Littelfuse
零件包装代码DO-15
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性UL LISTED
最大击穿电压7.98 V
最小击穿电压7.22 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-15
JESD-30 代码O-PALF-W2
最大非重复峰值反向功率耗散500 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
极性BIDIRECTIONAL
最大功率耗散1 W
认证状态Not Qualified
表面贴装NO
技术AVALANCHE
端子形式WIRE
端子位置AXIAL

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Transient Voltage Suppression Diodes
Axial Leaded – 500W > SA series
SA Series
Description
Bi-directional
RoHS
The SA Series is designed specifically to protect sensitive
electronic equipment from voltage transients induced by
lightning and other transient voltage events.
Uni-directional
Features
V
BR
@T
J
= V
BR
@25°C × (1+
α
T
• ESD protection of data
lines in accordance with
x (T
J
- 25))
IEC 61000-4-2 (IEC801-2)
(αT: Temperature Coefficient)
• EFT protection of data
• Glass passivated chip
lines in accordance with
junction in DO-15 Package
IEC 61000-4-4 (IEC801-4)
• 500W peak pulse
• Low incremental surge
capability at 10/1000μs
resistance
waveform, repetition rate
• Typical I
R
less than 1μA
(duty cycles):0.01%
above 13V
• Fast response time:
• High temperature
typically less than 1.0ps
soldering guaranteed:
from 0 Volts to BV min
260°C/40 seconds /
• Excellent clamping
0.375”
,(9.5mm) lead
capability
length, 5 lbs., (2.3kg)
• Typical failure mode is
tension
short from over-specified
• Plastic package has
voltage or current
underwriters laboratory
• Whisker test is conducted
flammability classification
based on JEDEC
94V-O
JESD201A per its table 4a
• Matte tin lead–free plated
and 4c
• Halogen free and RoHS
• IEC-61000-4-2 ESD
compliant
15kV(Air), 8kV (Contact).
Applications
T
J
, T
STG
R
uJL
R
uJA
-55 to 150
20
75
°C
°C/W
°C/W
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E128662/E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25°C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation by
10/1000μs Test Waveform (Fig.2)
(Note 1)
Steady State Power Dissipation on
Infinite Heat Sink at T
L
=75ºC (Fig. 6)
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Unidirectional
Only (Note 2)
Maximum Instantaneous Forward
Voltage at 35A for Unidirectional
Only (Note 3)
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
Value
500
3.0
70
3.5/5.0
Unit
W
W
A
V
TVS devices are ideal for the protection of I/O interfaces,
V
CC
bus and other vulnerable circuits used in telecom,
computer, industrial and consumer electronic applications.
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
A
= 25°C per Fig. 3.
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per
minute maximum.
_
_
3. V
F
<3.5V for devices of V
BR
<
200V and V
F
<5.0V for devices of V
BR
>
201V.
Functional Diagram
Additional Information
Bi-directional
Datasheet
Resources
Samples
Cathode
Uni-directional
© 2014 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/24/14
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