Freescale Semiconductor
Data Sheet: Advance Information
Document Number: MC13851
Rev. 2.0, 12/2010
MC13851
Package Information
Plastic Package:
MLPD-8
2.0
×
2.0
×
0.6 mm
Case: 2128-01
MC13851
General Purpose Low Noise
Amplifier with Bypass Switch
Ordering Information
Device
MC13851EP
Device Marking
851
Package
MLPD-8
1
Introduction
Contents:
1
2
3
4
5
6
7
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Electrical Specifications . . . . . . . . . . . . . . . . . . .3
Application Information . . . . . . . . . . . . . . . . . . . .9
Printed Circuit and Bill of Materials . . . . . . . . .20
Scattering and Noise Parameters . . . . . . . . . . .22
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32
Product Documentation . . . . . . . . . . . . . . . . . . .33
Revision History . . . . . . . . . . . . . . . . . . . . . . . . .33
The MC13851 is a cost-effective, high IP3 LNA with low
noise figure. This is the smaller leadless package version
of the MC13821 device. The MC13851 includes an
integrated bypass switch to preserve high input intercept
performance in variable signal strength environments
and boosts dynamic range. On-chip bias circuitry offers
low system cost. The input and output match are external
to allow maximum design flexibility. An external resistor
is used to set device current which allows balancing
required linearity with low current consumption. Gain is
optimized for applications greater than 1000 MHz. The
MC13851 is fabricated with the advanced RF BiCMOS
process using the eSiGe:C module and is available in the
2
×
2 mm MLPD-8 leadless package, offering a small,
low height, easy-to-solder solution for applications with
tight printed circuit board placement requirements.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006–2010. All rights reserved.
Introduction
1.1
Features
The MC13851 is intended for applications from 1000 MHz to 2500 MHz and the MC13852 is for
applications less than 1000 MHz.
• Gain: 18.7 dB (typical) at 1960 MHz and 17.7 dB (typical) at 2140 MHz
• Output third order intercept point (OIP3): 16 dBm at 1960 MHz and 17 dBm (typical) dBm at
2140 MHz
• Noise Figure (NF): 1.37 dB (typical) at 1960 MHz and 1.46 dB at 2140 MHz
• Output 1 dB compression point (P1dB): 8 dBm (typical) at 1960 MHz and 8 dBm (typical) at
2140 MHz
• IP3 Boost Circuitry from Freescale
• Bypass mode has return losses comparable to active mode, for use in systems with filters and
duplexers
• Bypass mode improves dynamic range in variable signal strength environments
• Integrated logic-controlled standby mode with current drain < 1uA
• Total supply current variable from 2.5 mA–5 mA using an external bias resistor
• In a receiver system with 20% active mode and 80% bypass mode, the average current drain is < 0.6
mA
• On-chip bias sets the bias point
• Bias stabilized for device and temperature variations
• MLPD-8 leadless package with low parasitics
• 1575 MHz, 1960 MHz, 2140 MHz and 2500 MHz application circuit evaluation boards with
characterization data are available
• Available in tape and reel packaging
1.2
Applications
Ideal for use in any RF product that operates between 1000 MHz and 2.5 GHz, and may be applied in:
• Buffer amplifiers
• Mixers
• IF amplifiers
• Voltage controlled oscillators (VCOs)
• Use with transceivers requiring external LNAs
• Smart metering
• Mobile—Cellular front end LNA, GPS, two-way radios
• Consumer—WLAN, 802.11 b/g
• Auto—GPS, active antenna, wireless security
• Low current drain/long standby time for extended battery life applications
MC13851 Advance Information, Rev. 2.0
2
Freescale Semiconductor
Electrical Specifications
Figure 1
shows a simplified block diagram of the MC13851 with the pinouts and location of the Pin 1
designator on the package.
Pin 1 Identifier
Figure 1. Functional Block Diagram
2
Electrical Specifications
Table 1. Maximum Ratings (TA=25°C, unless otherwise noted)
Rating
Symbol
Vcc
T
stg
T
A
P
RF
Table 1.
lists the maximum ratings for the device.
Value
3.3
-65–150
-30–85
10
100
24
90
Unit
Vdc
°
C
°
Supply voltage
Storage temperature range
Operating ambient temperature range
RF input power
Power dissipation
Thermal resistance, junction to case
Thermal resistance, junction to ambient, 4 layer board
R
C
dBm
mW
°
Pdis
R
thetaJC
thetaJA
C/W
°
C/W
Note: Maximum ratings
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be
restricted to the limits in the recommended Operating Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
≤200V.
Charge Device Model (CDM)
≤450V,
and
Machine Model (MM)
≤50V
Table 2
lists the recommended operating conditions.
Table 2. Recommended Operating Conditions
Characteristic
RF frequency range
Supply voltage
Symbol
f
RF
V
CC
Min
1000
2.3
Typ
—
2.75
Max
2500
3
Unit
MHz
V
MC13851 Advance Information, Rev. 2.0
Freescale Semiconductor
3
Electrical Specifications
Table 2. Recommended Operating Conditions (continued)
Characteristic
Logic voltage
Input high voltage
Input low voltage
Symbol
—
Min
1.25
0
Typ
1.8
0
Max
V
CC
0.80
Unit
Vdc
Vdc
Table 3
shows the use of the Gain and Enable pins to select Active mode (High Gain), Bypass mode (Low
Gain) or Standby mode (Disable) operation.
Table 3. Truth Table
Enable
Pin Function
Logic Circuit Bias Vcc
Toggles Gain Mode (Active or Bypass)
Toggles LNA On/Off
Pin Name
Low Gain
Vcc
Gain
Enable
1
0
1
High Gain
1
1
1
Low Gain
1
0
0
High Gain
1
1
0
Disable
Notes:
1. Logic state 1 equals Vcc voltage. Logic state of 0 equals ground potential.
2. Vcc is inductively coupled to LNA Out pin and Vcc pin
3. Minimum logic state 1 for enable and gain pins is 1.25V
4. Maximum logic state 0 for enable and gain pins is 0.8V
Table 4
lists the electrical characteristics associated with noise performance measured in a 50
Ω
system.
Additional noise parameters are listed in
Table 15
and
Table 16.
Also listed are the typical Icc and RF turn
on times for the device. Information and details on the boards are shown in
Section 4, “Printed Circuit and
Bill of Materials.”
Table 4. Electrical Characteristics (Vcc = 2.75 V, Ta = 25°C)
Characteristic
Insertion Gain
R1=1.2 kΩ, Freq=1.575 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=1.5 kΩ, Freq=1.575 GHz
R1=1.5 kΩ, Freq=2.14 GHz
Maximum Stable Gain and/or Maximum Available Gain [Note1]
R1=1.2 kΩ, Freq=1.575 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=1.5 kΩ, Freq=1.575 GHz
R1=1.5 kΩ, Freq=2.14 GHz
Minimum Noise Figure
R1=1.2 kΩ, Freq=1.575 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=1.5 kΩ, Freq=1.575 GHz
R1=1.5 kΩ, Freq=2.14 GHz
NFmin
—
—
—
—
0.97
1.07
0.98
1.1
1.3
1.4
1.3
1.4
dB
MSG, MAG
21.1
19.6
19
18.1
22.6
21.1
20.5
19.6
—
—
—
—
dB
|S21|
2
17.4
14.5
16.4
14.9
18.9
16
17.9
16.4
—
—
—
—
dB
Symbol
Min
Typ
Max
Unit
MC13851 Advance Information, Rev. 2.0
4
Freescale Semiconductor
Electrical Specifications
Table 4. Electrical Characteristics (Vcc = 2.75 V, Ta = 25°C)
Characteristic
Associated Gain at Minimum Noise Figure
R1=1.2 kΩ, Freq=1.575 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=1.5 kΩ, Freq=1.575 GHz
R1=1.5 kΩ, Freq=2.14 GHz
Icc and RF Turn On Time
Enable trigger total time of 1.8
μsecond
from 0 to 2.75 V
Icc rise time from 0 to 76% of final current level
Icc rise time from 0 to 87% of final current level
RF on time from leading edge of enable trigger to RF turn-on
—
—
—
6.4
9.6
1.37
—
—
—
μs
Gnf
20.5
17
20.5
17.5
22
18.6
22
19
—
—
—
—
dB
Symbol
Min
Typ
Max
Unit
Note:
Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
MAG = |S21/S12(K
±sqrt(K2-1))
|, if K>1, MSG = |S21/S12|, if K<1
Table 5
lists the electrical characteristics measured on evaluation boards tuned for typical application
frequencies when Rbias is 1.2 kΩ. Further details on the application circuits are shown in
Section 3,
“Application Information”
Table 5. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(Vcc = 2.75V, TA = 25°C, Rbias =1.2k
Ω
unless otherwise noted)
Characteristic
1575 MHz (Refer to
Figure 7)
Frequency
Active RF Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75V, Rbias=1.2kΩ
Active Current @ 2.75V, Rbias=1.5kΩ
Active Gain
Bypass RF Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
Bypass Gain
1960 MHz (Refer to
Figure 8)
Frequency
Active RF Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
f
G
NF
IIP3
P1dBoutput
—
17.7
—
-4
6
1960
18.7
1.37
-2.7
8
—
—
1.65
—
—
MHz
dB
dB
dBm
dBm
f
G
NF
IIP3
P1dBoutput
Icc
Icc
S21
G
NF
IIP3
—
S21
—
18.4
—
-6.5
6.3
—
—
18
-6.5
—
24
—
-7
1575
19.4
1.28
-5
7.4
4.8
3.8
19
-5.5
6
25.5
4
-5.5
—
—
1.6
—
—
5.8
4.8
—
—
7
—
20
—
MHz
dB
dB
dBm
dBm
mA
mA
dB
dB
dB
dBm
μA
dB
Symbol
Min
Typ
Max
Unit
MC13851 Advance Information, Rev. 2.0
Freescale Semiconductor
5
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