Datasheet No – 97476
March 24, 2010
IR11682S
DUAL SMART RECTIFIER DRIVER IC
Features
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Product Summary
LLC Half-bridge
200V
10.7V Clamped
+1A & -4A
100ns (typical)
80ns (typical)
Secondary-side high speed controller for
Topology
synchronous rectification in resonant half bridge
topologies
VD
200V proprietary IC technology
V
OUT
Max 400KHz switching frequency
Anti-bounce logic and UVLO protection
I
o+
& I
o-
(typical)
4A peak turn off drive current
Turn on Propagation Delay
Micropower start-up & ultra low quiescent current
10.7V gate drive clamp
Turn off Propagation Delay
80ns turn-off propagation delay
Wide Vcc operating range
Package Options
Direct sensing for both Synchronous Rectifiers
Cycle by Cycle MOT Check Circuit prevents multiple
false trigger GATE pulses
Minimal component count
Simple design
Lead-free
Typical Applications
•
LCD & PDP TV, Telecom SMPS, AC-DC adapters
8-Lead SOIC
Typical Connection Diagram
Vin
SR1
C1
Cdc
M1
1
Lr
2
Rg1
1
2
3
4
GATE1
VCC
VS1
VD1
GATE2
GND
VS2
VD2
8
7
6
5
C2
M2
IR1168
IR11682
Cout
Rg2
LOAD
Rtn
SR2
*Please note that this datasheet contains advance information that could change before the product is
released to production.
www.irf.com
© 2010 International Rectifier
IR11682S
Table of Contents
Description
Qualification Information
Absolute Maximum Ratings
Electrical Characteristics
Functional Block Diagram
Input/Output Pin Equivalent Circuit Diagram
Lead Definitions
Lead Assignments
Application Information and Additional Details
Package Details
Tape and Reel Details
Part Marking Information
Ordering Information
Page
3
4
5
6
8
9
10
10
12
19
20
21
22
www.irf.com
© 2010 International Rectifier
2
IR11682S
Description
IR11682 is a dual smart secondary-side rectifier driver IC designed to drive two N-Channel power MOSFETs
used as synchronous rectifiers in resonant converter applications. The IC can control one or more paralleled
N MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source for each rectifier
MOSFET voltage is sensed differentially to determine the level of the current and the power switch is turned
ON and OFF in close proximity of the zero current transition. The anti shoot-through protection logic prevents
both channels from turning on the power switches at the same time. The cycle-by-cycle MOT protection
circuit can automatically detect no load condition and turn off gate driver output to avoid negative current
flowing through the MOSFETs. Ruggedness and noise immunity are accomplished using an advanced
blanking scheme and double-pulse suppression that allows reliable operation in fixed and variable frequency
applications.
www.irf.com
© 2010 International Rectifier
3
IR11682S
Qualification Information
†
Qualification Level
Industrial
††
Comments: This family of ICs has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
MSL2
†††
260°C
SOIC8N
(per IPC/JEDEC J-STD-020)
Class B
(per JEDEC standard JESD22-A115)
Class 2
(per EIA/JEDEC standard EIA/JESD22-A114)
Class 1, Level A
(per JESD78)
Yes
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
IC Latch-Up Test
RoHS Compliant
†
††
†††
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please
contact your International Rectifier sales representative for further information.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
www.irf.com
© 2010 International Rectifier
4
IR11682S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions.
Parameters
Supply Voltage
Cont. Drain Sense Voltage
Pulse Drain Sense Voltage
Source Sense Voltage
Gate Voltage
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Package Power Dissipation
Switching Frequency
Symbol
V
CC
V
D
V
D
V
S
V
GATE
T
J
T
S
R
θJA
P
D
fsw
Min.
-0.3
-1
-5
-3
-0.3
-40
-55
Max.
20
200
200
20
20
150
150
128
970
400
Units
V
V
V
V
V
°C
°C
°C/W
mW
kHz
Remarks
V
CC
=20V, Gate off
SOIC-8
SOIC-8, T
AMB
=25°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
V
CC
V
D1,
V
D2
T
J
Fsw
Definition
Supply voltage
Drain Sense Voltage
Junction Temperature
Switching Frequency
Min.
8.6
†
-3
-25
---
Max.
18
200
125
400
Units
V
°C
kHz
† V
D1,
V
D2
-3V negative spike width
≤
100ns
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© 2010 International Rectifier
5
Microchip MCU
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