Freescale Semiconductor
Data Sheet: Advance Information
Document Number: MC13852
Rev. 2.0, 12/2010
MC13852
Package Information
Plastic Package: MLPD-8
2.0 x 2.0 x 0.6 mm
Case: 2128-01
MC13852
General Purpose Low Noise
Amplifier with Bypass Switch
Ordering Information
Device
MC13852EP
Device Marking
852
Package
MLPD-8
1
Introduction
Contents:
1
2
3
4
5
6
7
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Electrical Specifications . . . . . . . . . . . . . . . . . . .3
Applications Information . . . . . . . . . . . . . . . . . . .8
Printed Circuit Board and Bills of Materials . .14
Scattering and Noise Parameters . . . . . . . . . . .18
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Product Documentation . . . . . . . . . . . . . . . . . . .28
Revision History . . . . . . . . . . . . . . . . . . . . . . . . .28
The MC13852 is a cost-effective high gain LNA with
low noise figure. This is the lower application frequency
version of the MC13851.
An integrated bypass switch is included to preserve high
input intercept performance in variable signal strength
environments and boosts dynamic range. On-chip bias
circuitry offers low system cost. The input and output
match are external to allow maximum design flexibility.
The external resistor used to set device current enables
balancing required linearity with low current
consumption. Gain is optimized for applications
<1000 MHz.
The MC13852 is fabricated with an advanced RF
BiCMOS process using the eSiGe:C module and is
available in the 2
×
2 mm MLPD-8 leadless package,
offering a small, low height, easy-to-solder solution for
applications with tight printed circuit board placement
requirements.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006–2010. All rights reserved.
Introduction
1.1
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Features
The MC13852 is intended for applications from 400 to 1000 MHz; the MC13851 is for
applications >1000 MHz.
Gain: 20.3 dB (typ) at 434 MHz, 18.7 dB (typ) at 900 MHz.
Output third order intercept point (OIP3): 10.6 dBm at 434 MHz, 14.2 dBm (typ) dBm at 900 MHz.
Noise Figure (NF): 1.65 dB (typ) at 434 MHz, 1.2 dB at 900 MHz.
Output 1 dB compression point (P1dB): 7.8 dBm (typ) at 434 MHz, 9.6 dBm (typ) at 900 MHz.
IP3 Boost Circuitry.
Bypass mode return losses are comparable to active mode, for use in systems with filters and
duplexers.
Bypass mode improves dynamic range in variable signal strength environments.
Integrated logic-controlled standby mode with current drain < 1uA.
Total supply current variable from 3–6 mA using an external bias resistor.
Average current drain <0.6mA in a receiver lineup with 20% active / 80% bypass mode operation.
On-chip bias sets the bias point.
Bias stabilized for device and temperature variations.
MLPD-8 leadless package with low parasitics.
434 MHz and 900 MHz application circuit evaluation boards with characterization data are
available.
Available in tape and reel packaging.
1.2
Applications
Ideal for use in any RF product that operates between 400 MHz and 1 GHz, and may be applied in:
• Buffer amplifiers
• Mixers
• IF amplifiers
• Voltage-controlled oscillators (VCOs)
• Use with transceivers requiring external LNAs
• RF smart metering
• Mobile: Cellular front-end LNA, 2-way radios
• Auto: RKE, key fob, TPMS
• Low current drain/long standby time for extended battery life applications
Figure 1
shows a simplified block diagram, with the pinouts and the location of the pin 1 marking on the
package.
MC13852 Advance Information, Rev. 2.0
2
Freescale Semiconductor
Electrical Specifications
Emit
1
8
RF IN
Rbias
2
7
Band
RF OUT
3
Logic
6
Gain
Vcc
4
5
Enable
Figure 1. Simplified Block Diagram
2
Electrical Specifications
Table 1. Maximum Ratings
Ratings
Symbol
V
CC
T
stg
T
A
P
rf
P
dis
R
θJC
R
θJA
Value
3.3
-65 to 150
-30 to 85
10
100
24
90
Unit
V
°C
°C
dBm
mW
C/W
C/W
Table 1
lists the maximum ratings for the device.
Supply Voltage
Storage Temperature Range
Operating Ambient Temperature Range
RF Input Power
Power Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient, 4 Layer Board
NOTES:
1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
≤200
V, Charge Device Model (CDM)
≤450
V, and
Machine Model (MM)
≤50
V. Additional ESD data available upon request.
Table 2
lists the recommended operating conditions.
Table 2. Recommended Operating Conditions
Characteristic
RF Frequency range
Supply Voltage
Logic Voltage
Input High Voltage
Input Low Voltage
Symbol
f
RF
V
CC
—
Min
400
2.3
1.25
0
Typ
—
2.75
1.8
—
Max
1000
3.0
V
CC
0.8
Unit
MHz
Vdc
Vdc
MC13852 Advance Information, Rev. 2.0
Freescale Semiconductor
3
Electrical Specifications
Table 3
shows the use of the Gain, Enable and Band pins (along with the Vcc and RF out pins), to select
Active mode (High Gain), Bypass mode (Low Gain), or Standby mode (Disable) operation.
Table 3. Truth Table
Enable
Pin Function
Pin Name
Low Gain High Gain Low Gain High Gain
Logic Circuit Bias Vcc
Toggles Gain Mode (Active or Bypass)
Toggles LNA On/Off
Selects the LNA
Vcc
Gain
Enable
Band
1
0
1
1
1
1
1
1
1
0
0
1
1
1
0
1
Disable
NOTES:
1. Logic state "1" equals Vcc voltage. Logic state of "0" equals ground potential.
2. Vcc is inductively coupled to LNA Out pin and Vcc pin.
3. Minimum logic state "1" for enable and gain pins is 1.25V.
4. Maximum logic state "0" for enable and gain pins is 0.8V.
Table 4
lists electrical characteristics associated with noise performance measured in a 50Ω system.
Additional noise parameters are listed in
Table 14
and
Table 15.
Also listed are the typical Icc and RF
turn-on times for the device.
Table 4. Electrical Characteristics (Vcc = 2.75 V, Ta = 25
°
C)
Characteristic
Insertion Gain
R1=1.2 kΩ, Freq=434 MHz
R1=1.2 kΩ, Freq=900 MHz
Symbol
|S21|
2
Min
Typ
Max
Unit
20.4
16.4
26.7
22
—
21.9
18.3
28.2
23.5
0.92
0.84
29.6
23
—
dB
Maximum Stable Gain and/or Maximum Available Gain [Note1]
R1=1.2 kΩ, Freq=434 MHz
MSG, MAG
R1=1.2 kΩ, Freq=900 MHz
Minimum Noise Figure
R1=1.2 kΩ, Freq=434 MHz
R1=1.2 kΩ, Freq=900 MHz
Associated Gain at Minimum Noise Figure
R1=1.2 kΩ, Freq=434 MHz
R1=1.2 kΩ, Freq=900 MHz
Icc and RF Turn On Time
Enable trigger total time of 1.8 usec from 0 to 2.75 V
Icc rise time from 0 to 76% of final current level
Icc rise time from 0 to 87% of final current level
RF on time from leading edge of enable trigger to RF turn-on
NFmin
—
dB
1.2
1.1
—
dB
Gnf
27.6
21
dB
—
—
6.4
9.6
1.37
—
usec
NOTES:
1. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
MAG=|S21/S12(K+/-sqrt(K2-1))|, if K>1,
MSG =|S21/S12|, if K<1
Table 5
lists the electrical characteristics measured on evaluation boards that are tuned for typical
application frequencies. Further details on the application circuits are shown in
Section 4;
details on the
boards are shown in
Section 5.
MC13852 Advance Information, Rev. 2.0
4
Freescale Semiconductor
Electrical Specifications
Table 5. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(V
CC
= 2.775 V, T
A
= 25°C, Rbias = 2 kΩ, unless otherwise noted.)
Characteristic
434 MHz
Frequency
Active RF Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Output 1 dB Compression Point
Active Current @ 2.75 V, Rbias=1.2 kΩ
Active Current @ 2.75 V, Rbias=1.5 kΩ
Active Gain
Bypass RF Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
Bypass Gain
900 MHz
Frequency
Active RF Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Output 1 dB Compression Point
Active Current @ 2.75 V, Rbias=1.2 kΩ
Active Current @ 2.75 V, Rbias=1.5 kΩ
Active Gain
Bypass RF Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
Bypass Gain
f
G
NF
IIP3
P
1dB
I
CC
I
CC
S21
G
NF
IIP3
—
S21
—
17.6
—
-5.7
8.5
—
—
17.5
-6.7
—
25
—
-6.7
900
18.6
1.2
-4.4
9.6
5.5
4.4
18.5
-5.7
6.1
26.7
4
-5.7
—
—
1.55
—
—
6.5
5.4
—
—
7.1
—
10
—
MHz
dB
dB
dBm
dBm
mA
mA
dB
dB
dB
dBm
µA
dB
f
G
NF
IIP3
P
1dB
I
CC
I
CC
S21
G
NF
IIP3
—
S21
—
19.3
—
-10.7
6.8
—
—
19
-9.5
—
24
—
-9.5
434
20.3
1.65
-9.7
7.8
5.5
4.4
20.1
-8.5
8.9
25.1
4
-8.5
—
—
1.95
—
—
6.5
5.4
—
—
9.9
—
20
—
MHz
dB
dB
dBm
dBm
mA
mA
dB
dB
dB
dBm
µA
dB
Symbol
Min
Typ
Max
Unit
MC13852 Advance Information, Rev. 2.0
Freescale Semiconductor
5
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