isc
Silicon PNP Power Transistor
DESCRIPTION
·Excellent
Safe Operating Area
·DC
Current Gain-
: h
FE
= 20-70@I
C
= -4A,V
CE
= -4V
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= -1.1 V(Max)@ I
C
= -4A
·Complement
to the NPN MJ15015
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for high power audio, stepping motor and other
linear applications, and can also be used in power switc-
hing circuits such as relay or solenoid drivers, DC-DC co-
nverters,inverters and etc.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
-200
-120
-7
-15
-7
180
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
MJ15016
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.98
UNIT
℃/W
isc website
：
www.iscsemi.com
1
isc & iscsemi
is registered trademark
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(sat)-1
V
CE(sat)-2
V
CE(sat)-3
V
BE(on)
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
I
s/b
C
OB
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Second Breakdown Collector
Current with Base Forward Biased
Output Capacitance
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= -50mA ;I
B
= 0
I
C
= -4A; I
B
= -0.4A
I
C
= -10A; I
B
= -3.3A
I
C
= -15A; I
B
= -7.0A
I
C
= -4A ; V
CE
= -4V
V
CE
= -60V; V
BE(
OFF
)
= 0
V
CE
=200;I
E
=0
V
CE
=200;I
E
=0;T
C
=150℃
V
EB
= -7V; I
C
=0
I
C
= -4A ; V
CE
= -2V
I
C
= -4A ; V
CE
= -4V
I
C
= -10A ; V
CE
= -4V
V
CE
= -60V, t= 0.5 s,Nonrepetitive
I
E
= 0 ; V
CB
= -10V; f
test
= 1.0MHz
I
C
= -1A ; V
CE
= -4V; f
test
= 1.0MHz
10
20
5
-3
MJ15016
MIN
-120
MAX
UNIT
V
-1.1
-3.0
-5.0
-1.8
-0.1
-1
-5
-0.2
70
70
V
V
V
V
mA
mA
mA
A
pF
MHz
300
2.2
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website
：
www.iscsemi.com
2
isc & iscsemi
is registered trademark
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