isc
Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter
Sustaining Voltage
: V
CEO(SUS)
= 150V (Min.)
·High
DC Current Gain-
: h
FE
= 400(Min.)@I
C
= 10A
·Low
Collector Saturation Voltage-
: V
CE (sat)
= 1.0V(Max.)@ I
C
= 5.0A
·Complement
to the PNP MJ11017
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
MJ11018
APPLICATIONS
·Designed
for general purpose amplifiers, low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continunous
Collector Current-Peak
Base Current-Continunous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
150
150
5
15
30
0.5
175
175
-65~175
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.86
UNIT
℃/W
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isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
V
BE
(on)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 50mA; I
B
= 0
I
C
= 10A; I
B
= 0.1A
I
C
= 15A; I
B
= 0.15A
I
C
= 15A; I
B
= 0.15A
I
C
= 10A, V
CE
= 5V
V
CB
=150V;I
E
=0
V
CB
=150V;I
E
=0;T
C
=150℃
V
CE
= 150V; I
B
= 0
V
EB
= 5V; I
C
= 0
I
C
= 10A, V
CE
= 5V
I
C
= 15A, V
CE
= 5V
400
100
MIN
150
MJ11018
TYP.
MAX
UNIT
V
2.0
3.4
3.8
2.8
0.5
5.0
1.0
2.0
15000
V
V
V
V
mA
mA
mA
Switching Times
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 100V; I
C
= 10A; I
B1
= 0.1A
V
BE(
off
)
= 5V,
t
p
= 25μs; Duty Cycle≤10%
0.2
1.3
4.5
10
μs
μs
μs
μs
isc website
：
www.iscsemi.com
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isc & iscsemi
is registered trademark
isc
Silicon NPN Darlington Power Transistor
MJ11018
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website
：
www.iscsemi.com
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isc & iscsemi
is registered trademark
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