PD - 97122A
DirectFET Power MOSFET
RoHS Compliant
l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses and Switching Losses
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
l
IRF6633APbF
IRF6633ATRPbF
R
DS(on)
R
DS(on)
Q
oss
8.5nC
Typical values (unless otherwise specified)
V
DSS
20V max
V
GS
Q
gd
3.9nC
±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V
Q
g
tot
Q
gs2
1.7nC
Q
rr
33nC
V
gs(th)
1.8V
11nC
MU
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MU
DirectFET ISOMETRIC
Description
The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633APbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6633APbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
20
Typical R DS (on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
20
±20
16
13
69
130
65
13
12
10
8
6
4
2
0
0
5
10
15
20
25
ID= 13A
VDS = 16V
VDS= 10V
A
mJ
A
ID = 16A
15
10
TJ = 125°C
5
TJ = 25°C
0
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
30
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.77mH, R
G
= 25Ω, I
AS
= 13A.
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1
3/13/08
IRF6633APbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
1.4
–––
–––
–––
–––
–––
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
14
4.1
7.0
1.8
-5.0
–––
–––
–––
–––
–––
11
2.0
1.7
3.9
3.4
5.6
8.5
1.5
6.9
13
8.4
7.7
1410
680
250
–––
–––
5.6
9.4
2.2
–––
1.0
150
100
-100
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 16A
i
V
GS
= 4.5V, I
D
= 13A
i
V
mV/°C
μA
nA
S
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 13A
V
DS
= 10V
nC
V
GS
= 4.5V
I
D
= 13A
See Fig. 15
V
DS
= 10V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
i
I
D
= 13A
R
G
= 1.8
Ω
V
DS
= V
GS
, I
D
= 250μA
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
@T
C
=25°C (Body Diode)
Pulsed Source Current
(Body Diode)
g
–––
–––
–––
0.8
20
33
1.0
30
50
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
Typ. Max. Units
–––
–––
69
A
130
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 13A, V
GS
= 0V
i
T
J
= 25°C, I
F
= 13A
di/dt = 500A/μs
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
2
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IRF6633APbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.3
1.5
42
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
el
jl
kl
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.018
Max.
55
–––
–––
3.0
–––
Units
°C/W
eÃ
W/°C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
a
τ
2
τ
3
τ
3
τ
0.1
Ci=
τi/Ri
Ri (°C/W)
τι
(sec)
6.713214 0.003276
28.70184 0.9822
19.59917
41.2
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
t1 , Rectangular Pulse Duration (sec)
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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3
IRF6633APbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
≤60μs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
1
0.1
1
≤60μs
PULSE WIDTH
Tj = 150°C
10
100
Fig 4.
Typical Output Characteristics
1000
2.0
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Output Characteristics
ID = 16A
VGS = 4.5V
VGS = 10V
ID, Drain-to-Source Current
(Α)
100
TJ = 150°C
TJ = 25°C
10
TJ = -40°C
Typical RDS(on) (Normalized)
1.5
1.0
1
VDS = 10V
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
≤60μs
PULSE WIDTH
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
Fig 7.
Normalized On-Resistance vs. Temperature
18
TJ = 25°C
Typical RDS (on) (mΩ)
Coss = Cds + Cgd
C, Capacitance(pF)
14
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
Ciss
1000
Coss
10
Crss
100
1
10
VDS , Drain-to-Source Voltage (V)
100
6
2
0
20
40
60
80
100
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6633APbF
1000.0
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
100
1msec
10
100μsec
10.0
1.0
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10msec
0.1
10.0
100.0
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
2.0
70
60
ID, Drain Current (A)
50
40
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature (°C)
ID = 250μA
1.5
1.0
0.5
-75
-50
-25
0
25
50
75
100
125
150
TJ , Junction Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
240
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
EAS, Single Pulse Avalanche Energy (mJ)
200
1.45A
1.8A
BOTTOM
13A
TOP
160
120
80
40
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy Vs. Drain Current
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