PTFA261702E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
170 W, 2500 – 2700 MHz
Description
The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX
power amplifier applications in the 2500 to 2700 MHz band. Features
include input and output matching, and thermally-enhanced package
with slotted flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFA261702E
Package H-30275-4
WiMAX Performance
V
DD
= 28 V, I
DQ
= 1800 mA,
(modulation = 64 QAM2/3, channel bandwidth = 3.5
MHz, sample rate = 4 MHz)
30
-15
25
Efficiency (%)
20
15
10
5
0
20
25
30
35
40
45
50
Output Power (dBm)
Efficiency
EVM: ƒ = 2.62 GHz
EVM: ƒ = 2.68 GHz
EVM: ƒ = 2.65 GHz
-20
EVM (dBc)
-25
-30
-35
-40
-45
Features
•
•
•
Thermally-enhanced packages, Pb-free and
RoHS-compliant
Broadband internal matching
Typical WiMAX performance at 2650 MHz, 28 V
- Average output power = 32 W
- Linear gain = 15 dB
- Efficiency = 20%
- Error vector magnitude = –29 dB
Integrated ESD protection: Human Body Model,
Class
2
(minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
170 W (CW) output power
•
•
•
RF Characteristics
WiMAX Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1800 mA, P
OUT
= 32 W average
ƒ = 2650 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz
Characteristic
Gain
Drain Efficiency
Error Vector Magnitude
Symbol
G
ps
Min
—
—
—
Typ
15
20
–29
Max
—
—
—
Unit
dB
%
dB
η
D
EVM
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
*See Infineon distributor for future availability.
Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1800 mA, P
OUT
= 170 W PEP, ƒ = 2650 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
14
31
—
Typ
15
33
–30
Max
—
—
–27
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
—
—
Typ
—
—
—
0.08
2.5
—
Max
—
1.0
10.0
—
—
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1800 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 170 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
643
3.68
–40 to +150
0.272
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA261702E
V1
Package Type
H-30275-4
Package Description
Thermally-enhanced slotted flange, push-pull
Marking
PTFA261702E
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
WiMAX Performance
V
DD
= 28 V, I
DQ
= 1800 mA, ƒ = 2650 MHz,
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-15
-20
EVM (dB)
-25
-30
-35
-40
-45
20
25
30
35
40
45
50
Output Power (dBm)
T
CASE
= 25°C
T
CASE
= 90°C
EVM (dB)
WiMAX Performance
V
DD
= 28 V, ƒ = 2650 MHz
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-20
-25
-30
-35
-40
-45
-50
15
20
25
30
35
I
DQ
= 1800 mA
40
45
50
I
DQ
= 2000 mA
I
DQ
= 1600 mA
Output Power (dBm)
Gain vs. Output Power
V
DD
= 28 V, ƒ = 2650 MHz
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 1800 mA
ƒ
1
= 2619 MHz, ƒ
2
= 2620 MHz;
-20
16.5
16.0
ƒ
1
= 2679 MHz, ƒ
2
= 2680 MHz
ƒ = 2680 MHz
ƒ = 2620 MHz
3rd Order
I
DQ
= 2200 mA
I
DQ
= 1800 mA
-30
Power Gain (dB)
IMD (dBc)
15.5
15.0
14.5
14.0
41
43
45
47
49
51
53
-40
-50
-60
I
DQ
= 1400 mA
5th
-70
38
40
42
7th
44
46
48
50
Output Power (dBm)
Output Power, Avg. (dBm)
Data Sheet
3 of 10
Rev. 01.1, 2009-02-20
PTFA261702E
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 1800 mA, ƒ = 2680 MHz,
PAR = 9.8 dB @ 0.01 probability on CCDF
30
-20
30
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 1800 mA, ƒ = 2680 MHz,
PAR = 9.8 dB @ 0.01 probability on CCDF
T
CASE
= 25°C
T
CASE
= 90°C
Adj. Ch. Power Ratio
(dBc)
25
-30
Drain Efficiency (%)
20
15
10
5
0
35
37
Adj 885 kHz
Alt1 1.25 MHz
Drain Efficiency (%)
24
18
Efficiency
12
6
0
35
37
39
41
Alt
1
1.25 M`Hz
43
45
47
Adj 885 kHz
-30
-35
-40
-45
-50
-55
-60
-65
-70
-40
-50
-60
-70
-80
39
41
43
45
47
Output Power (dBm), Avg.
Output Power (dBm), Avg.
CW Sweep in a Broadband Test Fixture
V
DD
= 28 V, I
DQ
= 1800 mA, P
OUT
= 50 dBm
Output Power vs. Supply Voltage
I
DQ
= 1800 mA, ƒ = 2680 MHz
19
18
40
35
53.0
Efficiency (%)
30
25
20
15
10
2600
Gain (dB)
Efficiency
17
16
15
14
Output Power (dBm)
52.5
52.0
Gain
51.5
51.0
2620
2640
2660
2680
13
2700
23
25
27
29
31
33
Supply Voltage (V)
Frequency (MHz)
Data Sheet
4 of 10
Rev. 01.1, 2009-02-20
Adj. Ch. Power Ratio (dBc)
Efficiency
-20
-25
PTFA261702E
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 1800 mA, ƒ = 2680 MHz
18
17
16
60
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
0.37 A
1.11 A
1.85 A
2.78 A
5.56 A
8.34 A
Normalized Bias Voltage (V)
T
CASE
= 25°C
Drain Efficiency (%)
T
CASE
= 90°C
Gain
50
40
30
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
Gain (dB)
15
14
13
12
11
10
10
Efficiency
20
10
210
50
90
130
170
Output Power (W)
Case Temperature (°C)
Broadband Circuit Impedance
Z
0
= 50
Ω
Z Source
Z Load
D
S
G
G
Z Source
0.2
0.1
0.3
D
2600 MHz
2700 MHz
Frequency
MHz
2600
2620
2640
2660
2680
2700
R
Z Source
Ω
jX
–1.2
–1.2
–1.1
–0.9
–0.8
–0.6
8.9
9.1
9.2
9.3
9.4
9.5
Z Load
Ω
R
7.0
6.6
6.2
5.9
5.7
5.4
jX
–11.9
–11.5
–11.2
–10.9
–10.5
–10.2
0.
2
Z Load
2700 MHz
2600 MHz
Data Sheet
5 of 10
Rev. 01.1, 2009-02-20
0.4
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