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CY62126DV30 MoBL
®
1-Mbit (64K x 16) Static RAM
Features
• Very high speed
— 55 ns
• Temperature Ranges
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
• Wide voltage range
— 2.2V - 3.6V
• Pin compatible with CY62126BV
• Ultra-low active power
— Typical active current: 0.85 mA @ f = 1 MHz
— Typical active current: 5 mA @ f = f
Max
(55 ns speed)
• Ultra-low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• Available in Pb-free and non Pb-free 48-ball VFBGA and
44-pin TSOP Type II packages
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL
®
) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 90% when addresses are not
toggling. The device can be put into standby mode reducing
power consumption by more than 99% when deselected (CE
HIGH). The input/output pins (I/O
0
through I/O
15
) are placed
in a high-impedance state when: deselected (CE HIGH),
outputs are disabled (OE HIGH), both Byte High Enable and
Byte Low Enable are disabled (BHE, BLE HIGH) or during a
write operation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
8
through I/O
15
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
0
to I/O
7
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
8
to I/O
15
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
Functional Description
[1]
The CY62126DV30 is a high-performance CMOS static RAM
organized as 64K words by 16 bits. This device features
Logic Block Diagram
DATA IN DRIVERS
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
64K x 16
RAM Array
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
BHE
WE
CE
OE
BLE
A
12
A
11
A
13
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
A
14
A
15
Cypress Semiconductor Corporation
Document #: 38-05230 Rev. *H
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised July 18, 2006
CY62126DV30 MoBL
®
Product Portfolio
Power Dissipation
Operating, I
CC
(mA)
V
CC
Range (V)
Product
CY62126DV30L
CY62126DV30LL
Range
Automotive
Industrial
Min.
2.2
Typ.
3.0
Max.
3.6
Speed
(ns)
55
55
f = 1 MHz
Typ.
[2]
0.85
0.85
Max.
1.5
1.5
f = f
Max
Typ.
[2]
5
5
Max.
10
10
Standby, I
SB2
(µA)
Typ.
[2]
1.5
1.5
Max.
15
4
Pin Configurations
[3, 4]
48-ball VFBGA
Top View
1
BLE
I/O
8
I/O
9
V
SS
V
CC
I/O
14
I/O
15
NC
2
OE
BHE
I/O
10
I/O
11
3
A
0
A
3
A
5
NC
4
A
1
A
4
A
6
A
7
NC
A
15
A
13
A
10
5
A
2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
NC
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
A
B
C
D
E
F
G
H
TSOP II (Forward)
Top View
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
V
CC
V
SS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
15
A
14
A
13
A
12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
I/O
12
DNU
I/O
13
NC
A
8
A
14
A
12
A
9
A
5
A
6
A
7
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
8
A
9
A
10
A
11
NC
Notes:
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25°C.
3. NC pins are not connected to the die.
4. E3 (DNU) can be left as NC or V
SS
to ensure proper operation. (Expansion Pins on FBGA Package: E4 - 2M, D3 - 4M, H1 - 8M, G2 - 16M, H6 - 32M).
Document #: 38-05230 Rev. *H
Page 2 of 12
CY62126DV30 MoBL
®
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground
Potential ..............................................................−0.3 to 3.9V
DC Voltage Applied to Outputs
in High-Z State
[6]
....................................−0.3V to V
CC
+ 0.3V
DC Input Voltage
[6]
................................
−0.3V
to V
CC
+ 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
Range
Industrial
Automotive
Ambient Temperature (T
A
)
−40°C
to +85°C
−40°C
to +125°C
V
CC
[7]
2.2V to 3.6V
2.2V to 3.6V
DC Electrical Characteristics
(Over the Operating Range)
CY62126DV30-55
Parameter
V
OH
Description
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
2.2V < V
CC
< 2.7V
2.7V < V
CC
< 3.6V
2.2V < V
CC
< 2.7V
2.7V < V
CC
< 3.6V
2.2V < V
CC
< 2.7V
2.7V < V
CC
< 3.6V
Test Conditions
I
OH
=
−0.1
mA
I
OH
=
−1.0
mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
1.8
2.2
−0.3
−0.3
Ind’l
Auto
GND < V
O
< V
CC
, Output Disabled
Ind’l
Auto
f = f
Max
= 1/t
RC
f = 1 MHz
V
CC
= 3.6V,
I
OUT
= 0 mA, CMOS
level
L
Ind’l
Auto
LL
−1
−4
−1
−4
5
0.85
1.5
1.5
1.5
Min.
2.0
2.4
0.4
0.4
V
CC
+ 0.3
V
CC
+ 0.3
0.6
0.8
+1
+4
+1
+4
10
1.5
5
15
4
µA
µA
mA
µA
µA
V
V
V
Typ.
[5]
Max.
Unit
V
V
OL
V
IH
V
IL
Input LOW Voltage 2.2V < V
CC
< 2.7V
2.7V < V
CC
< 3.6V
I
IX
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
Automatic CE
Power-down
Current—
CMOS Inputs
GND < V
I
< V
CC
I
OZ
I
CC
I
SB1
CE > V
CC
−
0.2V,
V
IN
> V
CC
−
0.2V,
V
IN
< 0.2V,
f = f
Max
(Address and Data Only),
f = 0 (OE, WE, BHE and BLE)
CE > V
CC
−
0.2V,
V
IN
> V
CC
−
0.2V or
V
IN
< 0.2V, f = 0, V
CC
= 3.6V
I
SB2
Automatic CE
Power-down
Current—
CMOS Inputs
L
Ind’l
Auto
1.5
1.5
1.5
5
15
4
LL
Notes:
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25°C.
6. V
IL(min.)
=
−2.0V
for pulse durations less than 20 ns., V
IH(max.)
= V
CC
+ 0.75V for pulse durations less than 20 ns.
7. Full device operation requires linear ramp of V
CC
from 0V to V
CC(min)
& V
CC
must be stable at V
CC(min)
for 500
µs.
Document #: 38-05230 Rev. *H
Page 3 of 12
CY62126DV30 MoBL
®
Capacitance
[8]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz, V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
Thermal Resistance
[8]
Parameter
Θ
JA
Θ
JC
Description
Test Conditions
TSOP
55
12
VFBGA
76
11
Unit
°C/W
°C/W
Thermal Resistance (Junction to Ambient) Still Air, soldered on a 3 x 4.5 inch,
2-layer printed circuit board
Thermal Resistance (Junction to Case)
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
50 pF
INCLUDING
JIG AND
SCOPE
Equivalent to:
OUTPUT
THEVENIN EQUIVALENT
R
TH
V
TH
R2
V
CC
Typ
10%
GND
Rise TIme: 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall Time: 1 V/ns
Parameters
R1
R2
R
TH
V
TH
2.5V
16600
15400
8000
1.2
3.0V
1103
1554
645
1.75
Unit
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics
Parameter
V
DR
I
CCDR
Description
V
CC
for Data Retention
Data Retention Current
V
CC
=1.5V, CE > V
CC
−
0.2V,
V
IN
> V
CC
−
0.2V or V
IN
< 0.2V
L
L
LL
t
CDR[8]
t
R[9]
Chip Deselect to Data
Retention Time
Operation Recovery Time
Ind’l
Auto
Ind’l
0
100
Conditions
Min.
1.5
4
10
3
ns
µs
Typ
[2]
Max.
Unit
V
µA
Data Retention Waveform
DATA RETENTION MODE
V
CC
V
CC(min)
t
CDR
V
DR
> 1.5 V
V
CC(min)
t
R
CE
Notes:
8. Tested initially and after any design or proces changes that may affect these parameters.
9. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
>100
µs.
Document #: 38-05230 Rev. *H
Page 4 of 12
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