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IRF6714MPbF

IRF6714MTRPbF

l

PD - 96130A

RoHs Compliant and Halogen Free

Low Profile (<0.6 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for Sync. FET socket of Sync. Buck Converter

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

100% Rg tested

Typical values (unless otherwise specified)

DirectFET Power MOSFET

R

DS(on)

Q

gs2

4.1nC

V

DSS

Q

g

tot

V

GS

Q

gd

8.3nC

R

DS(on)

Q

oss

23nC

25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V

Q

rr

36nC

V

gs(th)

1.9V

29nC

MX

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ

SX

ST

MQ

MX

MT

MP

DirectFET ISOMETRIC

Description

The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

TM

packaging to achieve

the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck

including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt

immunity for synchronous FET applications.

Absolute Maximum Ratings

Parameter

V

DS

V

GS

I

D

@ T

A

= 25°C

I

D

@ T

A

= 70°C

I

D

@ T

C

= 25°C

I

DM

E

AS

I

AR

5

Typical RDS(on) (mΩ)

Max.

Units

V

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

GS

@ 10V

Continuous Drain Current, V

GS

@ 10V

Continuous Drain Current, V

GS

@ 10V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

g

e

f

25

±20

29

23

166

234

175

23

VGS, Gate-to-Source Voltage (V)

A

mJ

A

14

12

10

8

6

4

2

0

10

20

30

40

50

60

70

80

QG Total Gate Charge (nC)

Fig 2.

Typical Total Gate Charge vs Gate-to-Source Voltage

4

3

2

1

0

2

4

6

8

10

12

14

T J = 25°C

T J = 125°C

ID = 29A

ID= 23A

VDS= 20V

VDS= 13V

16

18

20

VGS, Gate -to -Source Voltage (V)

Notes:

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

Fig 1.

Typical On-Resistance Vs. Gate Voltage

T

C

measured with thermocouple mounted to top (Drain) of part.

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

J

= 25°C, L = 0.651mH, R

G

= 25Ω, I

AS

= 23A.

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1

04/29/09

IRF6714MPbF

Parameter

BV

DSS

∆ΒV

DSS

/∆T

J

R

DS(on)

V

GS(th)

∆V

GS(th)

/∆T

J

I

DSS

I

GSS

gfs

Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q

gs2

+ Q

gd

)

Output Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min.

25

–––

1.4

–––

122

–––

Typ. Max. Units

–––

18

1.6

2.6

1.9

-6.5

–––

29

9.0

4.1

8.3

8.1

12

23

1.2

18

26

13

9.6

3890

1110

490

–––

2.1

3.4

2.4

–––

1.0

150

100

-100

–––

44

–––

2.2

–––

nC

Ω

Conditions

V

GS

= 0V, I

D

= 250µA

mV/°C Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 29A

mΩ

V

GS

= 4.5V, I

D

= 23A

V

mV/°C

µA

nA

S

i

V

DS

= V

GS

, I

D

= 100µA

V

DS

= 20V, V

GS

= 0V

V

DS

= 20V, V

GS

= 0V, T

J

= 125°C

V

GS

= 20V

V

GS

= -20V

V

DS

= 13V, I

D

= 23A

V

DS

= 13V

V

GS

= 4.5V

I

D

= 23A

See Fig. 15

V

DS

= 16V, V

GS

= 0V

V

DD

= 13V, V

GS

= 4.5V

nC

ns

I

D

= 23A

R

G

= 1.8Ω, R

D

= 0.54Ω

See Fig. 17

V

GS

= 0V

Ãi

pF

V

DS

= 13V

ƒ = 1.0MHz

Diode Characteristics

Parameter

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min.

–––

Typ. Max. Units

–––

26

36

112

A

234

1.0

39

54

V

ns

nC

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

T

J

= 25°C, I

S

= 23A, V

GS

= 0V

T

J

= 25°C, I

F

= 23A

di/dt = 200A/µs

Ãg

i

Notes:

Pulse width

≤

400µs; duty cycle

≤

2%

2

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IRF6714MPbF

Absolute Maximum Ratings

P

D

@T

A

= 25°C

P

D

@T

A

= 70°C

P

D

@T

C

= 25°C

T

P

T

J

T

STG

Power Dissipation

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

f

Parameter

Max.

2.8

1.8

89

270

-40 to + 150

Units

W

°C

Thermal Resistance

R

θJA

R

θJA

R

θJA

R

θJC

R

θJ-PCB

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

Linear Derating Factor

g

dg

eg

fg

Parameter

Typ.

–––

12.5

20

–––

1.0

0.022

Max.

45

–––

1.4

–––

Units

°C/W

Ã

W/°C

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

τ

J

τ

J

τ

1

τ

1

R

1

R

1

τ

2

R

2

R

2

R

3

R

3

τ

3

R

4

R

4

τ

A

τ

2

τ

3

τ

4

τ

4

τ

A

Thermal Response ( Z thJA )

10

1

Ri (°C/W)

1.3634

7.8361

19.8534

15.9581

τi

(sec)

0.000202

0.096325

1.3861

51

0.1

Ci=

τi/Ri

Ci=

τi/Ri

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

0.01

0.1

1

10

100

1000

0.001

1E-006

1E-005

0.0001

0.001

t1 , Rectangular Pulse Duration (sec)

Fig 3.

Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Notes:

Used double sided cooling , mounting pad with large heatsink.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

R

θ

is measured at

T

J

of approximately 90°C.

Surface mounted on 1 in. square Cu

(still air).

Mounted to a PCB

with

small clip heatsink (still air)

Mounted on minimum

footprint full size board with

metalized back and with small

clip heatsink (still air)

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3

IRF6714MPbF

1000

TOP

VGS

10.0V

5.00V

4.50V

4.00V

3.50V

3.25V

3.00V

2.75V

1000

TOP

VGS

10.0V

5.00V

4.50V

4.00V

3.50V

3.25V

3.00V

2.75V

ID, Drain-to-Source Current (A)

10

BOTTOM

ID, Drain-to-Source Current (A)

100

BOTTOM

1

2.75V

10

2.75V

0.1

≤

60µs PULSE WIDTH

Tj = 25°C

0.01

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

≤

60µs PULSE WIDTH

Tj = 150°C

1

0.1

1

10

100

1000

V DS, Drain-to-Source Voltage (V)

Fig 4.

Typical Output Characteristics

1000

VDS = 15V

≤60µs

PULSE WIDTH

100

T J = 150°C

T J = 25°C

T J = -40°C

Typical RDS(on) (Normalized)

Fig 5.

Typical Output Characteristics

2.0

ID = 29A

ID, Drain-to-Source Current (A)

1.5

V GS = 10V

V GS = 4.5V

1.0

10

1

0.1

1

2

3

4

5

0.5

-60 -40 -20 0

20 40 60 80 100 120 140 160

T J , Junction Temperature (°C)

VGS, Gate-to-Source Voltage (V)

Fig 6.

Typical Transfer Characteristics

100000

VGS = 0V,

f = 1 MHZ

C iss = C gs + C gd, C ds SHORTED

C rss = C gd

Fig 7.

Normalized On-Resistance vs. Temperature

20

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

Vgs = 8.0V

Vgs = 10V

T J = 25°C

10000

Ciss

Coss

1000

Crss

Typical RDS(on) ( mΩ)

C oss = C ds + C gd

16

C, Capacitance(pF)

12

8

4

100

1

10

VDS, Drain-to-Source Voltage (V)

100

0

50

100

150

200

Fig 8.

Typical Capacitance vs.Drain-to-Source Voltage

Fig 9.

Typical On-Resistance Vs.

Drain Current and Gate Voltage

ID, Drain Current (A)

4

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IRF6714MPbF

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

ISD, Reverse Drain Current (A)

100

T J = 150°C

T J = 25°C

T J = -40°C

ID, Drain-to-Source Current (A)

100

10

1msec

10

1

DC

10msec

1

VGS = 0V

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VSD, Source-to-Drain Voltage (V)

0.1

T A = 25°C

T J = 150°C

Single Pulse

0.01

0.10

1.00

10.00

100.00

VDS, Drain-to-Source Voltage (V)

Fig 10.

Typical Source-Drain Diode Forward Voltage

Typical VGS(th) Gate threshold Voltage (V)

Fig11.

Maximum Safe Operating Area

3.5

3.0

2.5

2.0

ID = 100µA

1.5

1.0

0.5

-75 -50 -25

0

25

50

75 100 125 150

T J , Temperature ( °C )

ID = 1.0mA

ID = 1.0A

ID = 250µA

180

160

140

ID, Drain Current (A)

120

100

80

60

40

20

0

25

50

75

100

125

150

T C , Case Temperature (°C)

Fig 12.

Maximum Drain Current vs. Case Temperature

800

Fig 13.

Typical Threshold Voltage vs. Junction

Temperature

ID

TOP

2.43A

3.22A

BOTTOM 23.0A

EAS , Single Pulse Avalanche Energy (mJ)

700

600

500

400

300

200

100

0

25

50

75

100

125

150

Starting T J , Junction Temperature (°C)

Fig 14.

Maximum Avalanche Energy vs. Drain Current

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IRF6714MPBF_09

IRF6714MPBF_09概述

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