TN0201T
Vishay Siliconix
N-Channel 20–V (D–S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
Min (V)
20
r
DS(on)
Max (W)
1.0 @ V
GS
= 10 V
1.4 @ V
GS
= 4.5 V
V
GS(th)
(V)
1.0 to 3.0
I
D
(A)
0.39
FEATURES
D
D
D
D
D
Low On-Resistance: 0.75
W
Low Threshold: <1.75 V
Low Input Capacitance: 65 pF
Fast Switching Speed: 15 ns
Low Input and Output Leakage
BENEFITS
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
TO-236
(SOT-23)
G
1
3
D
Marking Code: N1wll
N1 = Part Number Code for TN0201T
w
= Week Code
ll
= Lot Traceability
S
2
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain Current
a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70200
S-04279—Rev. E, 16-Jul-01
www.vishay.com
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
20
"20
0.39
0.25
0.75
0.35
0.22
357
–55 to 150
Unit
V
A
W
_C/W
_C
11-1
TN0201T
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-Resistance
b
Forward Transconductance
b
Diode Forward Voltage
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
V
GS
= 10 V, I
D
= 0.3 A
g
fs
V
SD
V
DS
= 10 V, I
D
= 0.2 A
I
S
= 0.3 A, V
GS
= 0 V
0.75
450
0.85
1.0
mS
V
V
GS
= 0 V, I
D
= 10
mA
V
DS
= V
GS
, I
D
= 0.25 mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 14 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= 10 V, V
GS
= 10 V
V
GS
= 4.5 V, I
D
= 0.1 A
0.5
0.75
1
1.4
20
1.0
40
1.90
3.0
"100
1
10
mA
m
A
W
V
nA
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 16 V, V
GS
= 10 V
I
D
^
0.3 A
1400
300
200
65
35
6
pF
pC
Switching
a, c
t
d(on)
Turn-On Time
t
r
t
d(off)
t
f
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v2%.
c. Switching time is essentially independent of operating temperature.
V
DD
= 15 V, R
L
= 50
W
I
D
^
0.3 A, V
GEN
= 10 V
R
G
= 6
W
5
10
ns
12
6
VNBP02
Turn-Off Time
www.vishay.com
11-2
Document Number: 70200
S-04279—Rev. E, 16-Jul-01
TN0201T
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
0.8
5V
0.7
0.6
I
D
– Drain Current (A)
0.5
0.4
0.3
3V
0.2
0.1
2V
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
= 10, 9, 8, 7, 6 V
I
D
– Drain Current (A)
0.6
4V
0.8
1.0
Transfer Characteristics
0.4
0.2
T
J
= 125_C
–55_C
25_C
3.0
3.5
4.0
4.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
2.4
1.5
On-Resistance vs. Drain Current
r
DS(on)
– On-Resistance (
Ω )
r
DS(on)
– On-Resistance (
Ω )
2.0
1.2
V
GS
= 4.5 V
0.9
V
GS
= 10 V
0.6
1.6
1.2
I
D
@ 300 mA
0.8
0.4
0.3
0.0
0
4
8
12
16
20
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Junction Temperature
1.65
0.2
Threshold Voltage Variance Over Temperature
r
DS(on)
– On-Resistance (
Ω )
(Normalized)
1.45
V
GS(th)
– Variance (V)
V
GS
= 10 V @ 300 mA
1.25
V
GS
= 4.5 V
@ 100 mA
0.1
I
D
= 250
mA
–0.0
–0.1
1.05
–0.2
0.85
–0.3
0.65
–50
–25
0
25
50
75
100
125
150
–0.4
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
T
J
– Junction Temperature (_C)
Document Number: 70200
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-3
TN0201T
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
140
120
100
80
C
iss
60
40
20
C
rss
0
0
4
8
12
16
20
0
0
500
1000
1500
2000
2500
3000
C
oss
V
GS
= 0V
S = IMH
Z
Capacitance
20
V
DS
= 16 V
I
D
= 300 mA
V
GS
– Gate-to-Source Voltage (V)
15
Gate Charge
C – Capacitance (pF)
10
5
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (pC)
Source-Drain Diode Forward Voltage
10.0
I
D
= 250
mA
1.0
I
S
– Source Current (A)
0.100
T
J
= 125_C
0.010
25_C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
– Source-to-Drain Voltage (V)
www.vishay.com
11-4
Document Number: 70200
S-04279—Rev. E, 16-Jul-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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