Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR10C30 Series
10 Amp, 300 Volts
Schottky Silicon Carbide
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SSR10C 30
│
│
│
│
│
│
│
│
│
S.5 TX
│ │
└
Screening
__
= Not Screened
│ │
TX = TX Level
│ │
TXV= TXV Level
│ │
S = S Level
│ └
Package
S.5 = SMD.5
│
G = Cerpack
│
└
Configuration
Features:
High Voltage 300V
Very High Operating Temperature, 250ºC
No Recovery Time (tfr or trr)
High Current Operation, 10A
Hermetic Packaging
TX, TXV, S Level screening available
└
Voltage
20 = 200 V
30 = 300 V
Maximum Ratings
2/
Symbol
Value
Units
Peak Repetitive and Peak Surge Reverse
Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on I
O
)
Power Dissipation
Operating & Storage Temperature
3/
Maximum Thermal Resistance
Junction to Case
NOTES:
SSR10C20
SSR10C30
V
RRM
V
RSM
Io
I
FSM
P
D
Top & Tstg
R
θJC
Cerpack (G)
200
300
10
18
15
-55 to +250
4.4
Volts
Amps
Amps
Watts
ºC
ºC/W
SMD.5 (S.5)
1
1/ For ordering information, price, and availability, contact factory.
2/ All electrical characteristics @25oC unless otherwise specified.
3/ If high temperature operation is desired (> 175oC), consult
factory for soldering consideration.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0032C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSR10C30 Series
Electrical Characteristic
2/
Symbol
Min
Typ
Max
Units
Instantaneous Forward Voltage Drop
(T
J
= 25ºC, 300 µsec pulse)
Instantaneous Forward Voltage Drop
(T
J
= 150ºC, 300 µsec pulse)
Instantaneous Forward Voltage Drop
(T
J
= -55ºC, 300 µsec pulse)
Reverse Leakage Current
(V
R
= Rated V
R
, T
J
= 25ºC, 300 µsec min pulse)
Reverse Leakage Current
(V
R
= Rated V
R
, T
J
= 150ºC, 300 µsec min pulse)
Junction Capacitance
(V
R
=10 Vdc, T
c
= 25ºC, f = 1MHz)
Total Capacitive Charge
I
F
= 5A
I
F
= 10A
I
F
= 5A
I
F
= 10A
I
F
= 5A
I
F
= 10A
V
F1
V
F2
V
F3
V
F4
V
F5
V
F6
I
R1
I
R2
C
J
Q
C
---
---
---
---
---
---
---
---
---
---
1.20
1.50
1.18
1.65
1.35
1.60
25
100
350
13
1.32
1.65
1.28
1.85
1.45
1.75
100
250
500
---
Volts
Volts
Volts
µA
µA
pF
nC
(V
R
= 400V, I
F
= 5A, di/dt = 200A/µs, T
J
= 150ºC)
NOTES:
1/ For ordering information, price, and availability, contact factory.
2/ All electrical characteristics @25oC unless otherwise specified.
3/ If high temperature operation is desired (> 175oC), consult factory for soldering consideration.
Case Outlines: Cerpack
Case Outline: SMD.5
Available Part Numbers:
SSR10C20S.5 SSR10C20G
SSR10C30S.5 SSR10C30G
Package
SMD .5 (S.5)
Cerpack (G)
PIN ASSIGNMENT
Pin 1
Pin 2
Cathode
Anode
Anode
Anode
Pin 3 (Tab)
Anode
Cathode
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0032C
DOC
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