BL
FEATURES
GALAXY ELECTRICAL
SB120 - - - SB1100
VOLTAGE RANGE: 20 ---
100
V
CURRENT: 1.0 A
SCHOTTKY BARRIER RECTIFIERS
◇
Metal-Semiconductor junction with guard ring
◇
Epitaxial construction
◇
Low forward voltage drop,low switching losses
◇
High surge capability
◇
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
◇
The plastic material carries U/L recognition 94V-0
DO - 41
MECHANICAL DATA
◇
Case:JEDEC DO--41,molded plastic
◇
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
◇
Polarity: Color band denotes cathode
◇
Weight: 0.012 ounces,0.34 grams
◇
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB
120
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@ 1.0A
Maximum reverse current
@T
A
=25℃
(see fig.1)
SB
130
30
21
30
SB
140
40
28
40
SB
150
50
35
50
SB
160
60
42
60
1.0
SB
170
70
49
70
SB
180
80
56
80
SB SB
UNITS
190 1100
90
63
90
100
70
100
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
I
FSM
40.0
A
V
F
I
R
C
J
R
θJA
T
J
T
STG
0.55
0.7
0.5
0.85
V
mA
pF
℃/W
℃
℃
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at rated DC blocking voltage @T
A
=100℃
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
10.0
110
50
- 55 --- + 125
5.0
80
- 55 --- + 150
- 55 --- + 150
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermalresistance junction to ambient
Document Number 1766007
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
SB120 - - - SB1100
FIG.2 --MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
1.0
0.75
SB120-SB140
Resistive or
Inductive Load
0.375"(9.5mm)
Lead Length
50
8.3ms Single Half
Sine-Wave
40
0.5
30
SB150-SB1100
0.25
20
10
0
0
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MILLIAMPERES
1000
FIG.3 --TYPICAL INSTANTANEOUS
INSTANTANEOUS FORWARD CURRENT
AMPERES
FORWARD CHARACTERISTICS
50
100
10
SB150-SB160
TJ=100
℃
SB120-SB140
P u ls e w id th = 3 0 0
1 % D u ty C y cle
s
10
1
SB170-SB1100
1
TJ=75
℃
0 .1
0.1
TJ=25
0 .0 1
0
0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5--TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
/W
400
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE
SB120-SB140
T
J
=25
℃
f=1.0MHz
Vsig=50mVp-p
TRANSIENT THERMAL IMPEDANCE ,
100
100
SB150-SB1100
10
1
10
0.1
0.1
0.01
0.1
1
10
100
1
10
100
REVERSE VOLTAGE,VOLTS
PULSE DURATION,Sec.
www.galaxycn.com
Document Number 1766007
BL
GALAXY ELECTRICAL
2.
嵌入式系统
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