Si6955DQ
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
–30
R
DS(ON)
(W)
0.085 @ V
GS
= –10 V
0.19 @ V
GS
= –4.5 V
I
D
(A)
"2.5
"1.8
S
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
D
8
D
2
S
2
S
2
G
2
G
1
G
2
Si6955DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
A
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
A
Maximum Power Dissipation
A
Dissi ation
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
P
D
T
J
, T
stg
SYMBOL
V
DS
V
GS
LIMIT
–30
"20
"2.5
"2.1
"20
–1.25
1.0
W
0.64
–55 to 150
_C
A
V
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
A
Notes
A. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70180.
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56944—Rev. D, 23-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
SYMBOL
R
thJA
LIMIT
125
UNIT
_C/W
2-1
Si6955DQ
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
PARAMETER
STATIC
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
Drain-Source On-State
Drain Source On State Resistance
A
Forward Transconductance
A
Diode Forward Voltage
A
DYNAMIC
B
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1.25 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
V
DS
= –10 V, V
GS
= –
10
V, I
D
= –2.5 A
8.7
1.9
1.3
7
9
14
8
46
15
18
27
15
80
ns
15
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –30 V, V
GS
= 0 V
V
DS
= –30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
–5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –2.5 A
V
GS
= –4.5 V, I
D
= –1.8 A
V
DS
= –15 V, I
D
= –2.5 A
I
S
= –1.25 A, V
GS
= 0 V
–15
0.066
0.125
5
0.8
–1.2
0.085
0.19
W
S
V
–1.0
"100
–1
–25
V
nA
mA
A
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Notes
A. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
B. Guaranteed by design, not subject to production testing.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56944—Rev. D, 23-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
2-2
Si6955DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
Output Characteristics
20
V
GS
= 10 thru 6 V
16
I D – Drain Current (A)
5V
12
I D – Drain Current (A)
16
20
T
C
= –55_C
25_C
125_C
12
Transfer Characteristics
8
4V
4
3V
0
0
2
4
6
8
8
4
0
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On Resistance vs. Drain Current
0.40
700
600
r DS(on)– On-Resistance (
W
)
0.32
C – Capacitance (pF)
500
400
300
Capacitance
C
iss
0.24
V
GS
= 4.5 V
0.16
V
GS
= 10 V
0.08
C
oss
200
100
C
rss
0
0
3
6
9
12
15
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 10 V
I
D
= 2.5 A
V GS – Gate-to-Source Voltage (V)
Gate Charge
2.0
1.8
r DS(on)– On-Resistance (
W
)
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
On Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.5 A
8
6
4
2
0
0
2
4
6
8
10
Q
g
– Total Gate Charge (nC)
0.4
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56944—Rev. D, 23-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
2-3
Si6955DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
Source Drain Diode Forward Voltage
20
0.5
On Resistance vs. Gate to Source Voltage
I S – Source Current (A)
10
r DS(on)– On-Resistance (
W
)
0.4
0.3
I
D
= 2.5 A
0.2
T
J
= 150_C
T
J
= 25_C
0.1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
0.8
Threshold Voltage
30
Single Pulse Power
0.6
I
D
= 250
mA
Power (W)
25
V GS(th) Variance (V)
0.4
20
0.2
15
0.0
10
–0.2
5
–0.4
–50
–25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
30
T
J
– Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction to Ambient
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
2. Per Unit Base = R
thJA
= 125_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56944—Rev. D, 23-Nov-98
Siliconix was formerly a division of TEMIC Semiconductors
2-4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Document Number: 91000
Revision: 18-Jul-08
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