Si6973DQ
New Product
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.030 @ V
GS
= –4.5 V
–20
20
0.039 @ V
GS
= –2.5 V
0.055 @ V
GS
= –1.8 V
I
D
(A)
–4.8
–4.2
–3.5
S
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
D
8
D
2
S
2
S
2
G
2
G
1
G
2
Si6973DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
–20
"8
–4.8
–3.9
–30
–1.0
1.14
0.73
Steady State
Unit
V
–4.1
–3.2
A
–0.7
0.83
0.53
–55 to 150
_C
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71190
S-01058—Rev. A, 22-May-00
www.vishay.com
S
FaxBack 408-970-5600
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
86
124
52
Maximum
110
150
65
Unit
_C/W
2-1
Si6973DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –4.8 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= –2.5 V, I
D
= –4.2 A
V
GS
= –1.8 V, I
D
= –3.5 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –5 V, I
D
= –4.8 A
I
S
= –1.0 A, V
GS
= 0 V
–20
0.025
0.033
0.046
21
–0.65
–1.1
0.030
0.039
0.055
W
W
S
V
–0.45
"100
–1
–25
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1.0 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
10 V,
I
D
^
–1 A, V
GEN
= –4.5 V R
G
= 6
W
1A
4 5 V,
V
DS
= –10 V V
GS
= –4.5 V, I
D
= –4.8 A
10 V,
45V
48
21
4.4
3.3
27
27
93
43
30
40
40
140
65
50
ns
30
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 2.5 V
24
I
D
– Drain Current (A)
I
D
– Drain Current (A)
2V
18
24
125_C
18
25_C
30
T
C
= –55_C
Transfer Characteristics
12
1.5 V
6
0.5, 1 V
0
0
3
6
9
12
12
6
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
S
FaxBack 408-970-5600
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71190
S-01058—Rev. A, 22-May-00
2-2
Si6973DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
r
DS(on)
– On-Resistance (
W
)
4000
3500
C – Capacitance (pF)
0.08
V
GS
= 1.8 V
0.06
V
GS
= 2.5 V
0.04
V
GS
= 4.5 V
1000
0.02
500
0
0
6
12
18
24
30
0
0
C
rss
4
8
12
16
20
C
oss
3000
2500
2000
1500
C
iss
Vishay Siliconix
Capacitance
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 4.8 A
4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 4.8 A
1.4
3
r
DS(on)
– On-Resistance (
W)
(Normalized)
10
15
20
25
1.2
2
1.0
1
0.8
0
0
5
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.08
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 150_C
10
r
DS(on)
– On-Resistance (
W
)
0.06
I
D
= 4.8 A
0.04
T
J
= 25_C
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
– Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71190
S-01058—Rev. A, 22-May-00
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si6973DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
100
Single Pulse Power, Junction-to-Ambient
0.3
V
GS(th)
Variance (V)
80
I
D
= 250
mA
0.2
Power (W)
60
0.1
40
0.0
20
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 124_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71190
S-01058—Rev. A, 22-May-00
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
