PD - 96106A
IRF7307QPbF
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Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
HEXFET
®
Power MOSFET
D1
D1
D2
D2
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
N-Ch
V
DSS
20V
P-Ch
-20V
6
5
P-CHANNEL MOSFET
Top View
Description
These HEXFET
®
Power MOSFET's in a Dual SO-
8 package utilize the lastest processing techniques
to achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
R
DS(on)
0.050Ω 0.090Ω
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
10 Sec. Pulse Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
5.7
5.2
4.1
21
2.0
0.016
± 12
5.0
-55 to + 150
-5.0
P-Channel
-4.7
-4.3
-3.4
-17
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
Max.
62.5
Units
°C/W
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1
08/02/10
IRF7307QPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max.
20
-20
0.044
-0.012
0.050
0.070
0.090
0.140
0.70
-0.70
8.30
4.00
1.0
-1.0
25
-25
±100
20
22
2.2
3.3
8.0
9.0
9.0
8.4
42
26
32
51
51
33
4.0
6.0
660
610
280
310
140
170
Units
V
V/°C
Ω
V
S
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 4.5V, I
D
= 2.6A
V
GS
= 2.7V, I
D
= 2.2A
V
GS
= -4.5V, I
D
= -2.2A
V
GS
= -2.7V, I
D
= -1.8A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 15V, I
D
= 2.6A
V
DS
= -15V, I
D
= -2.2A
V
DS
= 16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V,
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= ± 12V
N-Channel
I
D
= 2.6A, V
DS
= 16V, V
GS
= 4.5V
P-Channel
I
D
= -2.2A, V
DS
= -16V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 2.6A, R
G
= 6.0Ω,
R
D
= 3.8Ω
P-Channel
V
DD
= -10V, I
D
= -2.2A, R
G
= 6.0Ω,
R
D
= 4.5Ω
Between lead tip
and center of die contact
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
nH
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
Min. Typ. Max. Units
Conditions
2.5
-2.5
A
21
-17
1.0
T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
V
-1.0
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
29
44
N-Channel
ns
56
84
T
J
= 25°C, I
F
= 2.6A, di/dt = 100A/µs
22
33
P-Channel
nC
T
J
= 25°C, I
F
= -2.2A, di/dt = 100A/µs
71 110
Intrinsic turn-on time is neglegible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
N-Channel I
SD
≤
2.6A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
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P-Channel I
SD
≤
-2.2A, di/dt
≤
50A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
2
N-Channel
1000
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
IRF7307QPbF
1000
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
100
100
10
10
1.5V
20µs PULSE WIDTH
T
J
= 150°C
A
1
10
100
1.5V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
100
1
0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
2.0
T = 25°C
J
T
J
= 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 4.3A
I
D
, Drain-to-Source Current (A)
1.5
10
1.0
0.5
1
1.5
2.0
2.5
3.0
V
DS
= 15V
20µs PULSE WIDTH
3.5
4.0
4.5
5.0
A
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
1200
Fig 4.
Normalized On-Resistance
Vs. Temperature
10
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 2.6A
V
DS
= 16V
8
C, Capacitance (pF)
900
C
iss
6
600
C
oss
4
300
C
rss
2
0
1
10
100
A
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 11
15
20
25
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
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3
IRF7307QPbF
100
N-Channel
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
100us
10
1ms
T
J
= 150°C
T
J
= 25°C
1
0.1
0.0
0.5
1.0
1.5
V
GS
= 0V
2.0
A
2.5
1
0.1
T
A
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
10ms
100
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
6.0
5.0
Fig 8.
Maximum Safe Operating Area
V
DS
V
GS
R
G
4.5V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
I
D
, Drain Current (A)
D.U.T.
+
4.0
V
-
DD
3.0
2.0
1.0
Fig 10a.
Switching Time Test Circuit
25
50
75
100
125
150
0.0
T
C
, Case Temperature
( °C)
V
DS
90%
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
50KΩ
12V
.2µF
.3µF
Fig 10b.
Switching Time Waveforms
D.U.T.
+
V
-
DS
4.5V
Q
GS
Q
G
Q
GD
V
GS
3mA
V
G
I
G
I
D
Charge
Current Sampling Resistors
Fig 11a.
Gate Charge Test Circuit
Fig 11b.
Basic Gate Charge Waveform
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4
P-Channel
100
TOP
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
IRF7307QPbF
100
-ID , Drain-to-Source Current (A)
10
-ID , Drain-to-Source Current (A)
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
10
1
1
-1.5V
-1.5V
20µs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
100
0.1
0.01
0.1
0.01
20µs PULSE WIDTH
T
J
= 150°C
0.1
1
10
100
A
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 12.
Typical Output Characteristics
100
Fig 13.
Typical Output Characteristics
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -3.6A
-I
D
, Drain-to-Source Current (A)
T
J
= 25°C
10
1.5
T
J
= 150°C
1.0
1
0.5
0.1
1.5
2.0
2.5
3.0
V
DS
= -15V
20µs PULSE WIDTH
3.5
4.0
4.5
5.0
A
0.0
-60
V
GS
= -4.5V
-40
-20
0
20
40
60
80
100 120 140 160
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 14.
Typical Transfer Characteristics
1500
Fig 15.
Normalized On-Resistance
Vs. Temperature
10
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= -2.2A
V
DS
= -16V
8
C, Capacitance (pF)
C
iss
1000
C
oss
C
rss
500
6
4
2
0
1
10
100
A
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 22
15
20
25
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 16.
Typical Capacitance Vs.
Drain-to-Source Voltage
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Fig 17.
Typical Gate Charge Vs.
Gate-to-Source Voltage
5
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