Freescale Semiconductor
Technical Data
Replaced by MW4IC001NR4. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
MW4IC001MR4
Rev. 4, 5/2006
RF LDMOS Wideband Integrated
Power Amplifier
The MW4IC001M wideband integrated circuit is designed for use as a
distortion signature device in analog predistortion systems. It uses Freescale’s
newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On
Chip design makes it usable from 800 MHz to 2170 MHz. The linearity
performances cover all modulations for cellular applications: GSM EDGE,
TDMA, CDMA and W - CDMA.
•
Typical CW Performance at 2170 MHz, 28 Volts, I
DQ
= 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
•
High Gain, High Efficiency and High Linearity
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MW4IC001MR4
800 - 2170 MHz, 900 mW, 28 V
W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
4.58
0.037
- 65 to +150
150
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case @ 85°C
Symbol
R
θJC
Value
27.3
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
0 (Minimum)
M1 (Minimum)
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW4IC001MR4
12
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 50
μA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 10 mA)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2
—
—
3
3.7
0.48
0.05
5
5
0.9
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
10
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
Forward Transconductance
(V
DS
= 10 V, I
D
= 0.1 A)
Dynamic Characteristics
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two - Tone Common Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Output Power, 1 dB Compression Point, CW
(V
DD
= 28 Vdc, I
DQ
= 12 mA, f = 2170 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
C
oss
C
rss
—
—
45
0.62
—
—
pF
pF
G
ps
—
13
—
dB
η
D
—
29
—
%
IMD
—
- 28
—
dBc
IRL
—
- 18
—
dB
P1dB
G
ps
η
D
IRL
—
12
35
- 10
0.85
13
38
- 16
—
—
—
—
W
dB
%
dB
MW4IC001MR4
RF Device Data
Freescale Semiconductor
13
ARCHIVE INFORMATION
Drain- Source On - Voltage
(V
GS
= 10 V, I
D
= 0.05 A)
V
GG
C1
C2
Z6
Z7
R1
RF
INPUT
DUT
Z8
L2
Z9
Z10
Z11
C5
C11
Z12
C12
Z13
C13
RF
OUTPUT
+
V
DD
C8
C7
C6
Z1
C9
C10
C3
Z2
L1
Z3
Z4
R2
C4
Z5
ARCHIVE INFORMATION
Figure 1. MW4IC001MR4 900 MHz Test Circuit Schematic
Table 6. MW4IC001MR4 900 MHz Test Circuit Component Designations and Values
Part
C1, C6
C2, C3, C5, C7
C4
C8
C9
C10, C11
C12
C13
L1
L2
R1
R2
Description
0.1
μF,
100 V Chip Capacitors
43 pF, 500 V Chip Capacitors
12 pF, 500 V Chip Capacitor
22
μF,
35 V Tantalum Chip Capacitor
4.7 pF, 500 V Chip Capacitor
0.6 - 4.5 pF, 500 V Variable Capacitors
2.7 pF, 500 V Chip Capacitor
3.3 pF, 500 V Chip Capacitor
5.6 nH Chip Inductor
10 nH Chip Inductor
100
W
Chip Resistor
20
W
Chip Resistor
Part Number
C1210C104K5RACTR
100B430JP500X
100B120JP500X
T491X226K035AS
100B4R7CP500X
27271SL
100B2R7CP500X
100B3R3CP500X
0805 Series
1008 Series
CRCW12061001F100
CRCW120620R0F100
Manufacturer
Kemet
ATC
ATC
Kemet
ATC
Johanson
ATC
ATC
AVX
ATC
Dale
Dale
MW4IC001MR4
14
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
1.331″
0.126″
0.065″
0.065″
0.680″
1.915″
0.120″
x 0.044″
x 0.076″
x 0.175″
x 0.195″
x 0.145″
x 0.055″
x 0.141″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
PCB
0.062″ x 0.044″ to 0.615″ Taper
0.082″ x 0.615″ Microstrip
0.075″ x 0.044″ Microstrip
0.625″ x 0.044″ Microstrip
1.375″ x 0.044″ Microstrip
Rogers RO4350, 0.020″,
ε
r
= 3.5
VGG
C1
C2
C6
V DD
C8
C7
C9
C10
C3
R1
C4
L1
R2
L2
C5
C12
C11
C13
ARCHIVE INFORMATION
MW4IC001MR4
900 MHz
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MW4IC001MR4 900 MHz Test Circuit Component Layout
MW4IC001MR4
RF Device Data
Freescale Semiconductor
15
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS - 900 MHz
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IRL
η
D
V
DS
= 28 Vdc
P
out
= 0.9 W (PEP)
I
DQ
= 14 mA
Two −Tone Measurement
100 kHz Tone Spacing
IM3
G
ps
860
865
870
875
880
885
890
895
900
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
50
46
42
38
34
30
26
22
18
14
10
855
−15
−17
−19
−21
−23
−25
−27
−29
−31
−33
−35
905
ARCHIVE INFORMATION
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus
Frequency
15
14
13
12
11
10
9
8
7
6
0
IMD, INTERMODULATION DISTORTION (dBc)
G
ps
η
D
60
55
50
η
D
, DRAIN EFFICIENCY (%)
−25
−30
−35
−40
−45
−50
−55
V
DS
= 28 Vdc
f1 = 880 MHz
f2 = 880.1 MHz
G ps , POWER GAIN (dB)
I
DQ
= 8 mA
10 mA
18 mA
P1dB
45
40
35
30
16 mA
V
DS
= 28 Vdc
I
DQ
= 14 mA
f = 880 MHz
0.2
0.4
0.6
0.8
1.0
1.2
25
20
15
1.4
14 mA
Two −Tone Measurement
100 kHz Tone Spacing
12 mA
0.01
0.1
1
P
out
, OUTPUT POWER (WATTS) PEP
10
P
out
, OUTPUT POWER (WATTS)
Figure 4. CW Performance versus Output
Power
Figure 5. Intermodulation Distortion versus
Output Power
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
0.01
5th Order
7th Order
0.1
Two −Tone Measurement
100 kHz Tone Spacing
1
10
3rd Order
V
DS
= 28 Vdc
I
DQ
= 14 mA
f1 = 880 MHz
f2 = 880.1 MHz
IMD, INTERMODULATION DISTORTION (dBc)
−25
−30
−35
−40
10 MHz
−45
−50
0.01
1 MHz
Tone
Spacing = 100 kHz
0.1
IMD, INTERMODULATION DISTORTION (dBc)
V
DS
= 28 Vdc
I
DQ
= 14 mA
f1 = 880 MHz,
f2 = f1 + Tone Spacing
Two −Tone Measurement
1
10
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
MW4IC001MR4
16
Figure 7. Third Order Intermodulation
Distortion versus Output Power
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
