Freescale Semiconductor
Technical Data
Document Number: MW6IC2015N
Rev. 3, 12/2008
The MW6IC2015N wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS
IC technology and integrates a multi - stage structure. Its wideband on - chip
design makes it usable from 1805 to 1990 MHz. The linearity performances
1805 - 1990 MHz, 15 W, 26 V
cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS,
GSM/GSM EDGE, CDMA
TDMA, CDMA, W - CDMA and TD - SCDMA.
RF LDMOS WIDEBAND
Final Application
INTEGRATED POWER AMPLIFIERS
•
Typical Two - Tone Performance: V
DD
= 26 Volts, I
DQ1
= 100 mA, I
DQ2
=
170 mA, P
out
= 15 Watts PEP, f = 1930 MHz
Power Gain — 26 dB
Power Added Efficiency — 28%
IMD — - 30 dBc
CASE 1329 - 09
Driver Application
TO - 272 WB - 16
•
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ1
= 130 mA, I
DQ2
=
PLASTIC
170 mA, P
out
= 3 Watts Avg., Full Frequency Band (1805 - 1880 MHz or
MW6IC2015NBR1
1930 - 1990 MHz)
Power Gain — 27 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = - 69 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 0.8% rms
CASE 1329A - 04
•
Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW
TO - 272 WB - 16 GULL
Output Power
PLASTIC
•
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW
MW6IC2015GNBR1
P
out
.
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
•
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
RF LDMOS Wideband Integrated
Power Amplifiers
MW6IC2015NBR1
MW6IC2015GNBR1
V
DS1
RF
in
RF
out
/V
DS2
GND
V
DS1
NC
NC
NC
RF
in
NC
V
GS1
V
GS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out
/
V
DS2
V
GS1
V
GS2
Quiescent Current
Temperature Compensation
(1)
13
12
NC
GND
Figure 1. Functional Block Diagram
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2006-2008. All rights reserved.
MW6IC2015NBR1 MW6IC2015GNBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
in
Value
- 0.5, +68
- 0.5, +6
- 65 to +150
150
225
20
Unit
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Final Application
(P
out
= 15 W CW)
Driver Application
(P
out
= 3 W CW)
Stage 1, 26 Vdc, I
DQ1
= 100 mA
Stage 2, 26 Vdc, I
DQ2
= 170 mA
Stage 1, 26 Vdc, I
DQ1
= 130 mA
Stage 2, 26 Vdc, I
DQ2
= 170 mA
Symbol
R
θJC
4.3
1.2
4.3
1.3
Value
(2,3)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale 1930 - 1990 MHz Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 100 mA, I
DQ2
= 170 mA, P
out
= 15 W
PEP, f1 = 1930 MHz, f2 = 1930.1 MHz, Two - Tone CW
Power Gain
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
PAE
IMD
IRL
24
26
—
—
26
28
- 30
—
—
—
- 27
- 10
dB
%
dBc
dB
Typical Two - Tone Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 100 mA, I
DQ2
= 170 mA, P
out
=
15 W PEP, 1805 - 1880 MHz, Two - Tone CW, 100 kHz Tone Spacing
Power Gain
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
PAE
IMD
IRL
—
—
—
—
26
28
- 30
- 10
—
—
—
—
dB
%
dBc
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW6IC2015NBR1 MW6IC2015GNBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 100 mA, I
DQ2
= 170 mA, 1805 - 1880 MHz and
1930 - 1990 MHz
Saturated Pulsed Output Power, CW
(8
μsec(on),
1 msec(off))
Quiescent Current Accuracy over Temperature
with 1.8 kΩ Gate Feed Resistors ( - 10 to 85°C)
(1)
Gain Flatness in 30 MHz Bandwidth @ P
out
= 3 W CW
Average Deviation from Linear Phase in 30 MHz Bandwidth
@ P
out
= 3 W CW
Average Group Delay @ P
out
= 3 W CW Including Output Matching
Part - to - Part Insertion Phase Variation @ P
out
= 3 W CW,
Six Sigma Window
P
sat
ΔI
QT
G
F
Φ
Delay
ΔΦ
—
—
—
—
—
—
35
±3
0.3
±1
2.7
±15
—
—
—
—
—
—
W
%
dB
°
ns
°
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 130 mA, I
DQ2
= 170 mA,
P
out
= 3 W Avg., 1805 - 1990 MHz and 1930 - 1990 MHz EDGE Modulation
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
PAE
EVM
SR1
SR2
—
—
—
—
—
27
19
0.8
- 69
- 78
—
—
—
—
—
dB
%
%
dBc
dBc
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
3
V
DD2
V
DD1
C1
RF
INPUT
1
2
3 NC
4 NC
5 NC
6
C11
C6
V
GG1
R1
C14
V
GG2
R2
C4
C15
C5
7 NC
8
Quiescent Current
Temperature Compensation
9
NC 13
10 NC
11
12
C8
Z9
C10
C12
C13
DUT
16
NC 15
C2
Z8
RF
OUTPUT
C3
Z1
Z2
Z3
14
Z4
Z5
C7
C9
Z6
Z7
Z1*
Z2
Z3
Z4
Z5
1.68″
0.50″
0.15″
0.13″
0.10″
x 0.08″ Microstrip
x 0.08″ Microstrip
x 0.04″ Microstrip
x 0.35″ Microstrip
x 0.35″ Microstrip
Z6*
Z7
Z8, Z9
PCB
0.61″ x 0.04″ Microstrip
1.30″ x 0.04″ Microstrip
1.18″ x 0.08″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
* Variable for tuning.
Figure 3. MW6IC2015NBR1(GNBR1) Test Circuit Schematic — 1930 - 1990 MHz
Table 6. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values — 1930 - 1990 MHz
Part
C1, C14, C15
C2, C4, C11
C3, C5
C6
C7, C8
C9, C10
C12
C13
R1
R2
Description
2.2
μF
Chip Capacitors
5.6 pF Chip Capacitors
10
μF
Chip Capacitors
1 pF Chip Capacitor
2.2 pF Chip Capacitors
0.5 pF Chip Capacitors
0.2 pF Chip Capacitor
0.1 pF Chip Capacitor
10 kΩ, 1/4 W Chip Resistor
18
Ω,
1/4 W Chip Resistor
Part Number
C3225X5R1H225MT
ATC100B5R6CT500XT
C5750X5R1H106MT
ATC100B1R0BT500XT
ATC100B2R2BT500XT
ATC100B0R5BT500XT
ATC100B0R2BT500XT
ATC100B0R1BT500XT
CRCW12061002FKEA
CRCW120618R0FKEA
Manufacturer
TDK
ATC
TDK
ATC
ATC
ATC
ATC
ATC
Vishay
Vishay
MW6IC2015NBR1 MW6IC2015GNBR1
4
RF Device Data
Freescale Semiconductor
V
DD1
C2
C3
V
DD2
MW6IC2015, Rev. 0
C1
CUT OUT AREA
C7
C8
C9
C11
C10
C12 C13
C6
C14
R1
R2
C4
V
GG2
C5
V
GG1
C15
Figure 4. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — 1930 - 1990 MHz
MW6IC2015NBR1 MW6IC2015GNBR1
RF Device Data
Freescale Semiconductor
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
