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IR2302S

产品描述0.2 A HALF BRDG BASED MOSFET DRIVER, PDSO8
产品类别模拟混合信号IC    驱动程序和接口   
文件大小207KB,共22页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
相似器件已查找到3个与IR2302S功能相似器件
下载文档 详细参数 选型对比 全文预览

IR2302S概述

0.2 A HALF BRDG BASED MOSFET DRIVER, PDSO8

0.2 A 半桥 场效应管驱动器, PDSO8

IR2302S规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称International Rectifier ( Infineon )
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codecompli
ECCN代码EAR99
其他特性FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
高边驱动器YES
接口集成电路类型HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G8
JESD-609代码e0
长度4.9 mm
湿度敏感等级2
功能数量1
端子数量8
最高工作温度150 °C
最低工作温度-40 °C
标称输出峰值电流0.2 A
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)245
电源15 V
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压20 V
最小供电电压5 V
标称供电电压15 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
断开时间0.28 µs
接通时间0.95 µs
宽度3.9 mm

文档预览

下载PDF文档
Data Sheet No. PD60207 Rev.A
IR2302
(S) & (PbF)
HALF-BRIDGE DRIVER
Features
Packages
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 5 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time
Lower di/dt gate driver for better noise
immunity
Shut down input turns off both channels
8-Lead SOIC also available LEAD-FREE (PbF).
8-Lead SOIC
IR2302(S)
(Also available LEAD-FREE (PbF))
8-Lead PDIP
IR2302
2106/2301//2108//2109/2302/2304 Feature Comparison
Part
2106/2301
21064
2108
21084
2109/2302
21094
Input
logic
HIN/LIN
HIN/LIN
Cross-
conduction
prevention
logic
no
yes
Dead-Time
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
none
Internal 540ns
Programmable 0.54~5
µs
Description
IN/SD
yes
The IR2302(S) are high voltage, high speed
Programmable 0.54~5
µs
power MOSFET and IGBT drivers with depen-
yes
HIN/LIN
Internal 100ns
2304
COM
dent high and low side referenced output
channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers
feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can
be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to
600 volts.
Internal 540ns
Typical Connection
up to 600V
V
CC
V
CC
IN
SD
V
B
HO
V
S
LO
IR2302
TO
LOAD
IN
SD
COM
(Refer to Lead Assignments for
correct configuration). This/
These diagram(s) show elec-
trical connections only. Please refer to our Application Notes
and DesignTips for proper circuit board layout.
www.irf.com
1

IR2302S相似产品对比

IR2302S IR2302 IR2302SPbF
描述 0.2 A HALF BRDG BASED MOSFET DRIVER, PDSO8 0.2 A HALF BRDG BASED MOSFET DRIVER, PDSO8 0.2 A HALF BRDG BASED MOSFET DRIVER, PDSO8
是否Rohs认证 不符合 不符合 符合
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
零件包装代码 SOIC DIP SOIC
包装说明 SOP, SOP8,.25 DIP, DIP8,.3 LEAD FREE, MS-012AA, SOIC-8
针数 8 8 8
Reach Compliance Code compli compliant unknow
ECCN代码 EAR99 EAR99 EAR99
其他特性 FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
高边驱动器 YES YES YES
接口集成电路类型 HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码 R-PDSO-G8 R-PDIP-T8 R-PDSO-G8
JESD-609代码 e0 e0 e3
长度 4.9 mm 9.865 mm 4.9 mm
湿度敏感等级 2 2 2
功能数量 1 1 1
端子数量 8 8 8
最高工作温度 150 °C 150 °C 150 °C
最低工作温度 -40 °C -40 °C -40 °C
标称输出峰值电流 0.2 A 0.2 A 0.2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP SOP
封装等效代码 SOP8,.25 DIP8,.3 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE SMALL OUTLINE
峰值回流温度(摄氏度) 245 225 260
电源 15 V 15 V 15 V
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 5.33 mm 1.75 mm
最大供电电压 20 V 20 V 20 V
最小供电电压 5 V 5 V 5 V
标称供电电压 15 V 15 V 15 V
表面贴装 YES NO YES
技术 CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn)
端子形式 GULL WING THROUGH-HOLE GULL WING
端子节距 1.27 mm 2.54 mm 1.27 mm
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30
断开时间 0.28 µs 0.28 µs 0.28 µs
接通时间 0.95 µs 0.95 µs 0.95 µs
宽度 3.9 mm 7.62 mm 3.9 mm

与IR2302S功能相似器件

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IR2302SPBF Infineon(英飞凌) Gate Drivers HALF BRDG DRVR 600V 5 to 20V 540ns

 
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