Freescale Semiconductor
Technical Data
Document Number: MRFE6S9201H
Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
•
Typical Single - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 40 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.8 dB
Drain Efficiency — 31.3%
Device Output Signal PAR — 8.1 dB @ 0.01% Probability on CCDF
ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, P
out
= 270 W CW
(2 dB Input Overdrive from Rated P
out
), Designed for Enhanced Ruggedness
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9201HR3
MRFE6S9201HSR3
880 MHz, 40 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9201HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9201HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +66
- 6.0, +10
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 197 W CW
Case Temperature 75°C, 40 W CW
Symbol
R
θJC
Value
(2,3)
0.34
0.33
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
MRFE6S9201HR3 MRFE6S9201HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 4.11 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
2.3
90
480
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.25
0.1
2.2
2.9
0.21
3
3.75
0.35
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 40 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched on input.
(continued)
G
ps
η
D
PAR
ACPR
IRL
19.5
29
7.7
—
—
20.8
31.3
8.1
- 46.5
- 16
22.5
—
—
- 45
-9
dB
%
dB
dBc
dB
MRFE6S9201HR3 MRFE6S9201HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 200 W PEP P
out
where IM3 = - 30 dBc
VBW
—
10
—
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 35 MHz Bandwidth @ P
out
= 40 W Avg.
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ P
out
= 200 W CW
Average Group Delay @ P
out
= 200 W CW, f = 880 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 200 W CW,
f = 880 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
0.19
0.461
11.66
14.97
0.011
0.39
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
MRFE6S9201HR3 MRFE6S9201HSR3
RF Device Data
Freescale Semiconductor
3
B1
V
BIAS
R4
+
C2
C4
R1
RF
INPUT
C8
Z1
C1
C43
C6
B2
+
R3
C3
C5
C7
C9
R2
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
+
C20
Z10
C10
Z12
Z13 Z14
Z15
C40
Z16
C12
Z17
C13
Z18
C16
Z19
C18
Z20
C29
C31
C30
C28
C27
C42
+
C26
V
SUPPLY
C21
Z21
C22
Z22
Z23
Z24
Z25
C39
Z26
RF
OUTPUT
C11
DUT
Z11
C41
C15
C14
C17
C19
C23
C24
C25
C32
C38
+
C44
C46
C37
C36
C35
C34
C33
+
C45
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.227″
0.938″
0.492″
0.046″
0.094″
0.141″
0.076″
0.023″
0.170″
x 0.065” Microstrip
x 0.065” Microstrip
x 0.065” Microstrip
x 0.300″ Microstrip
x 0.300″ Microstrip
x 0.546″ x 0.300″ Taper
x 0.734″ x 0.546″ Taper
x 0.780″ x 0.734″ Taper
x 0.780″ Microstrip
Z10, Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
0.853″
0.084″
0.086″
0.035″
0.093″
0.131″
0.047″
0.054″
x 0.100″
x 0.780″
x 0.780″
x 0.780″
x 0.709″
x 0.499″
x 0.365″
x 0.365″
Microstrip
Microstrip
Microstrip
x 0.709″ Taper
x 0.499″ Taper
x 0.286″ Taper
Microstrip
Microstrip
Z19
Z20
Z21, Z22
Z23
Z24
Z25
Z26
PCB
0.020″ x 0.365″ Microstrip
0.097″ x 0.065″ Microstrip
0.050″ x 0.065″ Microstrip
0.305″ x 0.065″ Microstrip
0.456″ x 0.065″ Microstrip
0.357″ x 0.065″ Microstrip
0.340″ x 0.065″ Microstrip
Taconic RF - 35, 0.030″,
ε
r
= 3.5
Figure 1. MRFE6S9201HR3(HSR3) Test Circuit Schematic
MRFE6S9201HR3 MRFE6S9201HSR3
4
RF Device Data
Freescale Semiconductor
Table 5. MRFE6S9201HR3(HSR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C4, C5, C20, C39, C44
C2, C3
C6, C32, C38, C43
C7, C12, C13, C14, C15, C16,
C17, C25
C8, C9
C10, C11
C18, C19, C21, C22, C23, C24
C26, C45
C27, C34
C28, C35
C29, C31, C37, C46
C30, C36
C33, C42
C40, C41
R1, R2
R3, R4
Description
Short RF Beads
33 pF Chip Capacitors
10
μF,
50 V Tantalum Capacitors
0.6 - 4.5 pF Variable Capacitors, Gigatrim
3.3 pF Chip Capacitors
4.7 pF Chip Capacitors
15 pF Chip Capacitors
1.0 pF Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
1.2K pF Chip Capacitors
20K pF Chip Capacitors
10
μF,
50 V Chip Capacitors
0.047 pF, 50 V Chip Capacitors
22
μF,
50 V Tantalum Capacitors
5.6 pF Chip Capacitors
12
Ω,
1/4 W Chip Resistors
1 KΩ, 1/4 W Chip Resistors
Part Number
2743019447ROP50
ATC100B330JT500XT
T491C106K050AT
27271SL
ATC600F3R3BT250XT
ATC600F4R7BT250XT
ATC100B6R8JT500XT
ATC600F1R0BT250XT
EKMG630ELL331MJ20S
ATC100B1R2BT500XT
ATC200B203MT50XT
GRM55DR61H106KA88B
C1825C473J5RAC
T491C226K050AT
ATC600F5R6BT250XT
CRCW120612R0FKEA
CRCW12061001FKEA
Manufacturer
Fair - Rite
ATC
Kemet
Johanson
ATC
ATC
ATC
ATC
United Chemi - Con
ATC
ATC
Murata
Kemet
Kemet
ATC
Vishay
Vishay
R4
B1
C26
C2
C4
R1
C10
C40 C16 C18
C1
C7
CUT OUT AREA
C6
C5
C43
C9
R2
C8
C12
C13 C21
C14 C23
C15
C24
C41 C17 C19
C22 C25
C27
C28 C30
C31
C42
C29
C20
C39
C32
C38
C46
C11
MRFE6S9201H/HS
Rev. 0
C44
C33
C3
R3
C37
B2
C45
C34 C35 C36
Figure 2. MRFE6S9201HR3(HSR3) Test Circuit Component Layout
MRFE6S9201HR3 MRFE6S9201HSR3
RF Device Data
Freescale Semiconductor
5
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