Freescale Semiconductor
Technical Data
Document Number: MRF9060N
Rev. 13, 6/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
NOT RECOMMENDED FOR NEW DESIGN
•
Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — - 31.5 dBc
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
Features
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Integrated ESD Protection
•
200_C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
945 MHz, 60 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265 - 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, + 15
223
1.79
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(1)
0.56
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M2 (Minimum)
C6 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
MRF9060NR1
1
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common-source amplifier applications in 26 volt
base station equipment.
MRF9060NR1
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
Symbol
Min
Typ
Max
Unit
NOT RECOMMENDED FOR NEW DESIGN
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 450 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1.3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 4 Adc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
μAdc
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
2.8
3.7
0.21
5.3
4
5
0.4
—
Vdc
Vdc
Vdc
S
C
iss
C
oss
C
rss
—
—
—
101
53
2.5
—
—
—
pF
pF
pF
G
ps
17
18
—
dB
η
37
40
—
%
IMD
—
- 31.5
- 28
dBc
IRL
—
- 14.5
-9
dB
G
ps
—
18
—
dB
η
—
40
—
%
IMD
—
- 31
—
dBc
IRL
—
- 12.5
—
dB
MRF9060NR1
2
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
μAdc
V
GG
C6
RF
INPUT
B1
+
C7
L1
C4
DUT Z11
Z1
C1
Z2
Z3
Z4
Z5
C2
Z6
Z7
Z8
C3
Z9
C5
Z10
C9
Z12
Z13
Z14
L2
B2
+
C14
C15
+
C16
+
C17
RF
OUTPUT
Z15
Z16
Z17
Z18
C13
C8
C10
C11
C12
V
DD
NOT RECOMMENDED FOR NEW DESIGN
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.240″
0.240″
0.500″
0.100″
0.330″
0.120″
0.270″
0.240″
0.340″
x 0.060″
x 0.060″
x 0.100″
x 0.270″
x 0.270″
x 0.270″
x 0.520″
x 0.520″
x 0.520″
Microstrip
Microstrip
Microstrip
x 0.080″, Taper
Microstrip
Microstrip
x 0.140″, Taper
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
0.060″
0.360″
0.060″
0.130″
0.300″
0.210″
0.600″
0.290″
0.340″
x 0.520″
x 0.270″
x 0.270″
x 0.060″
x 0.060″
x 0.060″
x 0.060″
x 0.060″
x 0.060″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part
B1
B2
C1, C7, C13, C14
C2, C3, C11
C4, C5
C6, C15, C16
C8, C9
C10
C12
C17
L1, L2
Board Material
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors
0.8 - 8.0 Gigatrim Variable Capacitors
11 pF Chip Capacitors (MRF9060NR1)
10 pF Chip Capacitors (MRF9060NBR1)
10
mF,
35 V Tantalum Chip Capacitors
10 pF Chip Capacitors
3.9 pF Chip Capacitor
1.7 pF Chip Capacitor
220
mF
Electrolytic Chip Capacitor
12.5 nH Inductors
30 mil Glass
Teflon
®
,
ε
r
= 2.55 Copper Clad, 2 oz Cu
Description
Part Number
2743019447
2743029446
ATC100B470JT500XT
27291SL
ATC100B110JT500XT
ATC100B100JT500XT
T491D106K035AT
ATC100B100JT500XT
ATC100B3R9CT500XT
ATC100B1R7BT500XT
MCAX63V227M13X22
A04T - 5
RF - 35 - 0300
Manufacturer
Fair - Rite
Fair - Rite
ATC
Johanson
ATC
Kemet
Newark
ATC
ATC
Multicomp
Coilcraft
Taconic
MRF9060NR1
RF Device Data
Freescale Semiconductor
3
NOT RECOMMENDED FOR NEW DESIGN
C6
C17
V
GG
B1
B2
C7
V
DD
NOT RECOMMENDED FOR NEW DESIGN
C15 C16
OUTPUT
C10
C11
C12
C13
L1
INPUT
C1
C2
C3
C4
WB1
CUT OUT AREA
C5
C8
WB2
C9
L2
MRF9060M
MRF9060MB
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout
MRF9060NR1
4
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
C14
TYPICAL CHARACTERISTICS
19
18
G ps , POWER GAIN (dB)
17
16
15
14
13
IRL
12
11
930
935
940
945
950
955
G
ps
η
V
DD
= 26 Vdc
P
out
= 60 W (PEP)
I
DQ
= 450 mA
Two−Tone, 100 kHz Tone Spacing
IMD
−32
−34
−36
960
50
45
40
35
IMD, INTERMODULATION
DISTORTION (dBc)
IRL, INPUT RETURN
LOSS (dB)
−28
−30
−10
−12
−14
−16
−18
η
, DRAIN
EFFICIENCY (%)
NOT RECOMMENDED FOR NEW DESIGN
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
19
I
DQ
= 625 mA
18.5
G ps , POWER GAIN (dB)
500 mA
18
450 mA
−15
−20
−25
−30
−35
450 mA
−40
−45
−50
−55
100
1
10
P
out
, OUTPUT POWER (WATTS) PEP
500 mA
625 mA
V
DD
= 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
100
I
DQ
= 275 mA
17.5
275 mA
17
V
DD
= 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
1
10
P
out
, OUTPUT POWER (WATTS) PEP
16.5
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
20
60
G
ps
50
40
30
20
η
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 945 MHz
10
10
0
100
η
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
−10
−20
−30
−40
−50
−60
7th Order
−70
−80
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
5th Order
V
DD
= 26 Vdc
I
DQ
= 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
18
G ps , POWER GAIN (dB)
3rd Order
16
14
12
10
8
0.1
1
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MRF9060NR1
RF Device Data
Freescale Semiconductor
5
NOT RECOMMENDED FOR NEW DESIGN
IMD, INTERMODULATION DISTORTION (dBc)
嵌入式系统
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