ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF185/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
•
High Gain, Rugged Device
•
Broadband Performance from HF to 1 GHz
•
Bottom Side Source Eliminates DC Isolators, Reducing Common Mode
Inductances
MRF185
1.0 GHz, 85 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
D
G
G
S
(FLANGE)
D
CASE 375B–04, STYLE 1
NI–860
MAXIMUM RATINGS
ARCHIVED 2005
Rating
Drain–Source Voltage
Gate–Source Voltage
Storage Temperature Range
Operating Junction Temperature
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
T
stg
T
J
P
D
Value
65
±20
– 65 to +150
200
250
1.45
Unit
Vdc
Vdc
°C
°C
Watts
W/°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 1
mAdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0 Vdc)
V
(BR)DSS
I
DSS
I
GSS
65
–
–
–
–
–
–
1
1
Vdc
µAdc
µAdc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF185
1
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS – continued
(T
C
= 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
Gate Quiescent Voltage
(V
DS
= 26 V, I
D
= 300 mA per side)
Delta Quiescent Voltage between sides
(V
DS
= 26 V, I
D
= 300 mA per side)
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 3 A per side)
Forward Transconductance
(V
DS
= 10 V, I
D
= 3 A per side)
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
DS
= 28 V, V
GS
= 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(V
DD
= 28 V, P
out
= 85 W, f = 960 MHz, I
DQ
= 600 mA)
Drain Efficiency
(V
DD
= 28 V, P
out
= 85 W, f = 960 MHz, I
DQ
= 600 mA)
Load Mismatch
(V
DD
= 28 Vdc, P
out
= 85 W, f = 960 MHz, I
DQ
= 600 mA,
Load VSWR 5:1 at All Phase Angles)
G
ps
η
11
45
14
53
–
–
dB
%
C
oss
C
rss
–
–
38
4.6
–
6
pF
pF
V
GS(Q)
∆V
GS(Q)
V
DS(on)
g
fs
3
–
–
1.6
4
0.15
0.75
2
5
0.3
1
–
Vdc
Vdc
Vdc
s
Symbol
Min
Typ
Max
Unit
Ψ
No Degradation in Output Power
ARCHIVED 2005
MRF185
2
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ARCHIVED 2005
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola
products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture
of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their
respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E
Motorola, Inc. 2002.
How to reach us:
USA/EUROPE/Locations Not Listed:
Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN:
Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569
ASIA/PACIFIC:
Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334
Technical Information Center: 1–800–521–6274
HOME PAGE:
http://www.motorola.com/semiconductors/
MRF185
4
◊
MOTOROLA RF DEVICE DATA
MRF185/D
Archived 2005
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