Freescale Semiconductor
Technical Data
Document Number: MRF377H
Rev. 2, 3/2009
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
•
Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts,
I
DQ
= 2000 mA, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain
≥
16.7 dB
Drain Efficiency
≥
21%
ACPR
≤
- 58 dBc
•
Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts,
I
DQ
= 2000 mA
Output Power — 80 Watts Avg.
Power Gain
≥
16.5 dB
Drain Efficiency
≥
27.5%
IMD
≥
- 31.3 dBc
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Device Designed for Push - Pull Operation Only
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
C
T
J
CW
Value
- 0.5, +65
- 0.5, +15
17
648
3.7
- 65 to +150
150
200
235
1.38
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
°C
W
W/°C
MRF377HR3
470 - 860 MHz, 45 W AVG., 32 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 105 W CW
Case Temperature 77°C, 45 W CW
Symbol
R
θJC
Value
(1,2)
0.27
0.29
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
MRF377HR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Drain - Source Breakdown Voltage
(4)
(V
GS
= 0 Vdc, I
D
=10
μA)
Zero Gate Voltage Drain Current
(4)
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μA)
On Characteristics
Gate Quiescent Voltage
(3)
(V
DS
= 32 Vdc, I
D
= 2000 mAdc)
Drain - Source On - Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 3 A)
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2000 mA,
f = 860 MHz)
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2000 mA,
f = 860 MHz)
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2000 mA,
f = 860 MHz)
C
rss
—
3.2
—
pF
V
GS(Q)
V
DS(on)
2.5
—
3.5
0.27
4.5
—
Vdc
Vdc
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
65
—
—
—
—
—
—
2.8
—
1
1
—
Vdc
μAdc
μAdc
Vdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In DVBT OFDM Single - Channel, Narrowband Fixture, 50 ohm system)
G
ps
16.5
18.2
—
dB
η
D
21
22.9
—
%
ACPR
—
- 59.2
- 57
dBc
Typical Performances
(3)
(In DVBT OFDM Single - Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
1.
2.
3.
4.
Each side of device measured separately.
Part is internally matched both on input and output.
Measurement made with device in push - pull configuration.
Drains are tied together internally as this is a total device value.
(continued)
G
ps
—
—
—
—
—
17.6
17.6
17.4
17.4
16.8
—
—
—
—
—
dB
MRF377HR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Symbol
η
D
—
—
—
—
—
ACPR
—
—
—
—
—
- 59.3
- 59.3
- 58.7
- 58.7
- 58.1
—
—
—
—
—
23.5
25.8
23.0
22.7
21.3
—
—
—
—
—
dBc
Min
Typ
Max
Unit
%
Typical Performances
(1)
(In ATSC 8VSB Single - Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
1. Measurement made with device in push - pull configuration.
G
ps
—
—
—
—
—
η
D
—
—
—
—
—
IMD
—
—
—
—
—
31.7
32.7
32.9
34.2
35.4
—
—
—
—
—
31.0
34.3
30.1
29.6
27.8
—
—
—
—
—
dBc
17.5
17.5
17.2
17.2
16.6
—
—
—
—
—
%
dB
MRF377HR3
RF Device Data
Freescale Semiconductor
3
Table 5. 845 - 875 MHz Narrowband Test Circuit Component Designations and Values
Part
B1, B2
Balun 1, Balun 2
C1
C2
C3
C4, C5
C6
C7, C8, C9, C10
C11, C12
C13, C14, C15, C16
C17, C18
C19, C20
C21, C22, C23, C24
C25, C26
L1
L2
L3, L4
R1, R2
Description
Ferrite Beads, Surface Mount, 11
Ω
(0805)
0.8 - 1GHz Xinger Balun
33 pF Chip Capacitor (0805)
2.7 pF Chip Capacitor (0603)
12 pF Chip Capacitor (0805)
6.8 pF Chip Capacitors (0805)
2.7 pF Chip Capacitor (0805)
3.3 pF Chip Capacitors (0805)
2.2
μF,
50 V Chip Capacitors
0.01
μF,
100 V Chip Capacitors
0.56
μF,
50 V Chip Capacitors
10
μF,
50 V Tantalum Chip Capacitors
47
μF,
16 V Tantalum Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
12 nH Inductor (0603)
7.15 nH Inductor
10 nH Inductors (0603)
24
Ω,
1/4 W, Chip Resistors
3A412
08055J330JBS
06035J2R7BBS
08051J120GBS
08051J6R8BBS
0805J2R7BBS
08051J3R3BBS
C1825C225J5RAC
C1825C103J1GAC
C1825C564J5RAC
T491D106K050AT
T491D476K016AT
EMVY630GTR471MMH0S
0603HC- 12NXJB
1606 - 7
0603HC- 10NXJB
CRCW120624R0FKEA
Part Number
2508051107Y0
Manufacturer
Fair - Rite
Anaran
AVX
AVX
AVX
AVX
AVX
AVX
Kemet
Kemet
Kemet
Kemet
Kemet
Nippon Chemi - Con
CoilCraft
CoilCraft
CoilCraft
Vishay
MRF377 Gate
C19
V
GG
C22
C21
Balun 1
C14
R1
WB1
L3
B1
C15
WB3
C18
C11
C9
MRF377 Drain
V
DD
C26
Balun 2
L2
C5
C6
C7
C2
C1
L1
WB2
C3
C4
WB4
C8
R2
C13
C24
V
GG
C23
L4
C10
B2
C16
C17
C25
C12
C20
DS1152−A Rev 0
V
DD
DS1152−B Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 1. 845 - 875 MHz Narrowband Test Circuit Component Layout
MRF377HR3
4
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
19
18.5
G
ps
G ps , POWER GAIN (dB)
18
−20
−30
I
DQ
= 1400 mA
−40
1600 mA
−50
1800 mA
2000 mA
2200 mA
−60
V
DD
= 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
10
100
P
out
, OUTPUT POWER (WATTS) PEP
17.5
17
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
10
100
P
out
, OUTPUT POWER (WATTS) PEP
16.5
16
−70
Figure 2. Two - Tone Power Gain versus
Output Power
Figure 3. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−20
−30
η
D
,
DRAIN EFFICIENCY (%)
−40
−50
−60
7th Order
−70
−80
10
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
100
P
out
, OUTPUT POWER (WATTS) PEP
45
40
35
30
25
20
15
10
5
10
100
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
η
D
3rd Order
5th Order
Figure 4. Intermodulation Distortion Products
versus Output Power
Figure 5. Two - Tone Drain Efficiency versus
Output Power
18
G ps , POWER GAIN (dB)
17
G
ps
40
20
η
D
0
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
IMD
−20
−40
−60
−80
10
100
P
out
, OUTPUT POWER (WATTS) PEP
16
15
14
13
12
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
MRF377HR3
RF Device Data
Freescale Semiconductor
5
η
D
,
DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
19
60
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