Freescale Semiconductor
Technical Data
Document Number: MRF21045
Rev. 12, 10/2008
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
NOT RECOMMENDED FOR NEW DESIGN
2110-
-2170 MHz, 45 W, 28 V
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465E-
-04, STYLE 1
NI-
-400
MRF21045LR3
CASE 465F-
-04, STYLE 1
NI-
-400S
MRF21045LSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
--0.5, +65
--0.5, +15
105
0.60
--65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(1)
1.65
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M2 (Minimum)
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF21045LR3 MRF21045LSR3
1
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2--carrier W--CDMA Performance for V
DD
= 28 Volts, I
DQ
= 500 mA,
f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels
measured over 3.84 MHz Bandwidth at f1 --5 MHz and f2 +5 MHz,
Distortion Products measured over a 3.84 MHz Bandwidth at f1 --10 MHz
and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power — 10 Watts Avg.
Efficiency — 23.5%
Gain — 15 dB
IM3 — --37.5 dBc
ACPR — --41 dBc
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF21045LR3
MRF21045LSR3
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
µAdc)
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
NOT RECOMMENDED FOR NEW DESIGN
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 500 mAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
—
3.9
0.19
3
4
5
0.21
—
Vdc
Vdc
Vdc
S
C
rss
—
1.8
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) 2--carrier W--CDMA. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common--Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 10 W Avg., I
DQ
= 500 mA,
f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 10 W Avg., I
DQ
= 500 mA,
f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 10 W Avg., I
DQ
= 500 mA,
f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz
Bandwidth at f1 --10 MHz and f2 +10 MHz.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 10 W Avg., I
DQ
= 500 mA,
f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz
Bandwidth at f1 --5 MHz and f2 +5 MHz.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 10 W Avg., I
DQ
= 500 mA,
f1 = 2157.5 MHz, f2 = 2167.5 MHz)
1. Part is internally matched both on input and output.
(continued)
G
ps
13.5
15
—
dB
η
21
23.5
—
%
IM3
—
--37.5
--35
dBc
ACPR
—
--41
--38
dBc
IRL
—
--12
--9
dB
MRF21045LR3 MRF21045LSR3
2
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Functional Tests
(In Freescale Test Fixture, 50 ohm system) — continued
Two--Tone Common--Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
G
ps
—
14.9
—
dB
Symbol
Min
Typ
Max
Unit
NOT RECOMMENDED FOR NEW DESIGN
Two--Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two--Tone Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
P
out
, 1 dB Compression Point
(V
DD
= 28 Vdc, I
DQ
= 500 mA, f = 2170 MHz)
η
—
36
—
%
IMD
—
--30
—
dBc
IRL
—
--12
—
dB
P1dB
—
50
—
W
MRF21045LR3 MRF21045LSR3
RF Device Data
Freescale Semiconductor
3
NOT RECOMMENDED FOR NEW DESIGN
V
BIAS
R1
+
R2
C5
C4
C3
R3
B1
+
C2
C7
C8
R4
V
SUPPLY
L1
C9
C10
+
C11
NOT RECOMMENDED FOR NEW DESIGN
Z5
RF
INPUT
Z10
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
DUT
Z6
Z7
Z8
C6
Z9
Z1, Z9
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
0.750″ x 0.084″ Transmission Line
0.160″ x 0.084″ Transmission Line
1.195″ x 0.176″ Transmission Line
0.125″ x 0.320″ Transmission Line
1.100″ x 0.045″ Transmission Line
0.442″ x 0.650″ Transmission Line
0.490″ x 0.140″ Transmission Line
0.540″ x 0.084″ Transmission Line
0.825″ x 0.055″ Transmission Line
Board
PCB
0.030″ Glass Teflon
®
,
Keene GX--0300--55--22,
ε
r
= 2.55
Etched Circuit Boards
MRF21045 Rev. 3, CMR
Figure 1. MRF21045LR3(SR3) Test Circuit Schematic
Table 5. MRF21045LR3(SR3) Component Designations and Values
Designators
B1
C1, C2, C6
C7
C3, C9
C4, C10
C5
C8
C11
L1
N1, N2
R1
R2
R3, R4
Description
Short Ferrite Bead, Fair Rite, #2743019447
43 pF Chip Capacitors, ATC #100B430JCA500X
5.6 pF Chip Capacitor, ATC #100B5R6JCA500X
1000 pF Chip Capacitors, ATC #100B102JCA500X
0.1 F Chip Capacitors, Kemet #CDR33BX104AKWS
1.0 F Tantalum Chip Capacitor, Kemet #T491C105M050
10 F Tantalum Chip Capacitor, Kemet #T495X106K035AS4394
22 F Tantalum Chip Capacitor, Kemet #T491X226K035AS4394
1 Turn, #20 AWG, 0.100″ ID
Type N Flange Mounts, Omni Spectra #3052--1648--10
1.0 k , 1/8 W Chip Resistor
180 k , 1/8 W Chip Resistor
10 , 1/8 W Chip Resistors
MRF21045LR3 MRF21045LSR3
4
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
C8
C7
R1
B1 R3
C2
L1
C10 R4
C9
R2
C5
C4 C3
C11
C6
WB1
WB2
NOT RECOMMENDED FOR NEW DESIGN
C1
MRF21045
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF21045LR3(SR3) Test Circuit Component Layout
MRF21045LR3 MRF21045LSR3
RF Device Data
Freescale Semiconductor
5
NOT RECOMMENDED FOR NEW DESIGN
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