PD - 96200
IRFB3077GPbF
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Worldwide Best R
DS(on)
in TO-220
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
l
Halogen-Free
G
S
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
75V
2.8m
:
3.3m
:
210A
120A
c
G
D
S
TO-220AB
IRFB3077GPbF
G
D
S
Gate
Drain
Max.
Source
Units
A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dV/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
d
f
210
150
120
850
370
2.5
± 20
2.5
-55 to + 175
300
10lbf in (1.1N m)
200
See Fig. 14, 15, 22a, 22b,
c
c
W
W/°C
V
V/ns
°C
x
x
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
d
e
d
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
j
Parameter
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
°C/W
www.irf.com
1
12/05/08
IRFB3077GPbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
Min. Typ. Max. Units
75
–––
–––
2.0
–––
–––
–––
–––
–––
––– –––
0.091 –––
2.8
3.3
–––
4.0
–––
20
––– 250
––– 100
––– -100
1.2
–––
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 75A
V V
DS
= V
GS
, I
D
= 250µA
V
DS
= 75V, V
GS
= 0V
µA
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
Ω
f = 1MHz, open drain
g
d
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
37
42
25
87
69
95
9400
820
350
1090
1260
–––
220
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A
V
DS
= 38V
V
GS
= 10V
V
DD
= 38V
I
D
= 75A
R
G
= 2.1Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz,See Fig. 5
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
g
g
ns
h
iÃ
pF
i
, See Fig.11
h
,
D
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
210
Conditions
MOSFET symbol
showing the
integral reverse
Ãd
850
A
G
S
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
42
63
ns
–––
50
75
–––
59
89
nC
T
J
= 125°C
–––
86
130
–––
2.5
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
V
R
= 64V,
T
J
= 25°C
T
J
= 125°C
I
F
= 75A
di/dt = 100A/µs
T
J
= 25°C
g
g
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.028mH
R
G
= 25Ω, I
AS
= 120A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
75A, di/dt
≤
400A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C
2
www.irf.com
IRFB3077GPbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
100
100
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
10
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 75A
VGS = 10V
2.0
100
TJ = 175°C
1.5
10
TJ = 25°C
VDS = 25V
1.0
≤
60µs PULSE WIDTH
1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
16000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
VDS = 60V
VDS= 38V
VDS= 17V
16
C, Capacitance (pF)
12000
Ciss
8000
12
8
4000
4
Coss
Crss
0
1
10
100
0
0
40
80
120
160
200
240
280
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
3
IRFB3077GPbF
1000.0
10000
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
1000
100µsec
100
1msec
10
LIMITED BY PACKAGE
10.0
TJ = 25°C
1.0
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1.0
DC
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
0.1
10.0
100.0
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage
240
LIMITED BY PACKAGE
200
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
100
160
120
80
40
0
25
50
75
100
125
150
175
TC, Case Temperature (°C)
90
80
70
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
3.0
Fig 10.
Drain-to-Source Breakdown Voltage
EAS, Single Pulse Avalanche Energy (mJ)
1000
2.5
800
I D
TOP
22A
40A
BOTTOM
120A
2.0
Energy (µJ)
600
1.5
400
1.0
0.5
200
0.0
0
20
40
60
80
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy Vs. DrainCurrent
4
www.irf.com
IRFB3077GPbF
1
D = 0.50
Thermal Response ( ZthJC )
0.1
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.01
τ
J
τ
1
τ
2
Ri (°C/W)
τi
(sec)
0.0766 0.000083
0.1743 0.000995
0.1513
0.007038
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
10
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Typical Avalanche Current vs.Pulsewidth
240
EAR , Avalanche Energy (mJ)
200
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 120A
160
120
80
40
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
175
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
