PD - 97493A
IRFH6200PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 4.5V)
20
1.20
1.50
V
mΩ
m
Ω
R
DS(on) max
(@V
GS
= 2.5V)
PQFN 5X6 mm
Applications
•
Charge and discharge switch for battery application
•
Load switch for 12V (typical) bus
Features and Benefits
Features
Low R
DSon
(≤ 1.20mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
results in
⇒
Orderable part number
IRFH6200TRPBF
IRFH6200TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Max.
20
±12
45
36
100
100
400
3.6
250
0.029
-55 to + 150
Units
V
A
g
Power Dissipation
g
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 8
www.irf.com
1
09/7/2010
IRFH6200PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
20
–––
–––
–––
0.5
–––
–––
–––
–––
–––
260
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.4
0.80
1.10
0.8
-6.6
–––
–––
–––
–––
–––
155
22
53
1.3
14
74
140
160
10890
2890
2180
Max. Units
–––
–––
1.20
1.50
1.1
–––
1.0
150
100
-100
–––
230
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
Ω
ns
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ
V
GS
= 4.5V, I
D
= 50A
V
GS
= 2.5V, I
D
= 50A
V
V
DS
= V
GS
, I
D
= 150µA
mV/°C
µA
nA
S
nC
V
DS
= 16V, V
GS
= 0V
e
e
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 10V, I
D
= 50A
V
DS
= 10V
V
GS
= 4.5V
I
D
= 50A (See Fig.17 & 18)
V
DD
= 10V, V
GS
= 4.5V
I
D
= 50A
R
G
=1.0Ω
See Fig.15
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
780
30
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ.
–––
–––
–––
86
350
Max. Units
100
A
400
1.2
130
525
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 10V
di/dt = 260A/µs
e
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
g
g
Typ.
–––
–––
–––
–––
Max.
0.5
15
35
22
Units
°C/W
2
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IRFH6200PbF
1000
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
1000
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
1.3V
1.3V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = 50A
1.4
VGS = 4.5V
ID, Drain-to-Source Current (A)
100
T J = 175°C
T J = 25°C
1.2
1.0
10
0.8
1.0
0.5
1.0
VDS = 10V
≤60µs
PULSE WIDTH
1.5
2.0
2.5
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 16V
VDS= 10V
Ciss
10000
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
100
200
300
400
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFH6200PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
100
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10msec
100µsec
10
T J = 25°C
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
VGS = 0V
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
DC
10
100
Fig 7.
Typical Source-Drain Diode Forward Voltage
400
VDS, Drain-to-Source Voltage (V)
Fig 8.
Maximum Safe Operating Area
1.6
VGS(th) , Gate threshold Voltage (V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = 150µA
ID = 500µA
ID = 1.0mA
ID = 1.0A
ID, Drain Current (A)
300
Limited By Package
200
100
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
1
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH6200PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
4
ID = 50A
3
3500
EAS , Single Pulse Avalanche Energy (mJ)
3000
2500
2000
1500
1000
500
0
ID
TOP
19A
21A
BOTTOM 30A
2
T J = 125°C
1
T J = 25°C
0
0
2
4
6
8
10
12
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
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