Freescale Semiconductor
Technical Data
Document Number: MRF6S21140H
Rev. 5, 2/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
•
Typical 2--carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1200 mA,
P
out
= 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 27.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21140HR3
MRF6S21140HSR3
2110-
-2170 MHz, 30 W AVG., 28 V
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465B-
-03, STYLE 1
NI-
-880
MRF6S21140HR3
CASE 465C-
-02, STYLE 1
NI-
-880S
MRF6S21140HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 75°C, 30 W CW
Symbol
R
θJC
Value
(2,3)
0.35
0.38
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2004--2007, 2010. All rights reserved.
MRF6S21140HR3 MRF6S21140HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1200 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 30 W Avg., f1 = 2112.5 MHz, f2 =
2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz
Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
14.5
26
—
—
—
15.5
27.5
--37
--41
--15
17.5
—
--35
--38
--9
dB
%
dBc
dBc
dB
MRF6S21140HR3 MRF6S21140HSR3
2
RF Device Data
Freescale Semiconductor
V
BIAS
C5
R1
Z6
V
SUPPLY
R2
C4
C3
Z5
C10
C12
C13
+
C16
R3
RF
INPUT
C17
Z1
C1
C19
C2
Z2
Z3
Z4
DUT
C18
C6
C7
Z8
Z9
Z10
Z11
C9
RF
OUTPUT
Z12
Z13
C8
Z7
C11
C14
C15
Z1
Z2
Z3
Z4
Z5
Z6, Z7
0.250″ x 0.083″ Microstrip
1.177″ x 0.083″ Microstrip
0.443″ x 0.083″ Microstrip
0.276″ x 0.787″ Microstrip
0.786″ x 0.083″ Microstrip
(quarter wave length for bias purpose)
0.833″ x 0.083″ Microstrip
(quarter wave length for supply purpose)
Z8
Z9
Z10
Z11, Z12
Z13
PCB
0.531″ x 1.000″ Microstrip
0.308″ x 0.083″ Microstrip
0.987″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.160″ x 0.083″ Microstrip
Taconic TLX8--0300, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C3, C8, C9, C10, C11
C2
C4
C5, C12, C13, C14, C15
C6, C19
C7
C16
C17, C18
R1, R2
R3
Description
6.8 pF Chip Capacitors
0.8 pF Chip Capacitor
220 nF Chip Capacitor
10
μF
Chip Capacitors
0.2 pF Chip Capacitors
0.5 pF Chip Capacitor
220
μF,
63 V Electrolytic Capacitor, Radial
0.1 pF Chip Capacitors
10 kΩ, 1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistor
Part Number
ATC100B6R8CT500XT
ATC100B0R8BT500XT
VJ1812Y22YKXCAT
C5750X5R1H106MT
ATC100B0R2BT500XT
ATC100B0R5BT500XT
EMVY630ATR221MKE0S
ATC100B0R1BT500XT
CRCW12061002FKTA
CRCW120610R0FKTA
Manufacturer
ATC
ATC
Vishay
TDK
ATC
ATC
Nippon Chemi--Con
ATC
Vishay
Vishay
MRF6S21140HR3 MRF6S21140HSR3
RF Device Data
Freescale Semiconductor
3
R2
V
GS
R1
C10
C4
C3
V
DD
C16
C12 C13
C17
C1
R3
CUT OUT AREA
C9
C5
C19
C2
C6 C7
C18
C14 C15
C8
C11
MRF6S21140H
Rev 0
Figure 2. MRF6S21140HR3(HSR3) Test Circuit Component Layout
MRF6S21140HR3 MRF6S21140HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
15.6
15.5
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc, P
out
= 30 W (Avg.),
15.4 I
DQ
= 1200 mA, 2--Carrier W--CDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth,
15.3 PAR = 8.5 dB @ 0.01% Probability (CCDF)
15.2
15.1
15
2060
30
28
26
G
ps
IRL
IM3
--32
--36
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
--12
--15
--18
--21
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
--12
--15
--18
--21
1800 mA
IRL, INPUT RETURN LOSS (dB)
1500 mA
900 mA
1200 mA
10
IRL, INPUT RETURN LOSS (dB)
η
D
ACPR --40
--44
2220
2080
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 3. 2-
-Carrier W-
-CDMA Broadband Performance @ P
out
= 30 Watts Avg.
15
14.9
G
ps
, POWER GAIN (dB)
14.8
14.7
14.6
14.5
14.4
2060
V
DD
= 28 Vdc, P
out
= 60 W (Avg.),
I
DQ
= 1200 mA, 2--Carrier W--CDMA,
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
42
40
38
--24
--27
--30
η
D
G
ps
IRL
IM3
ACPR
2080
2100
2120
2140
2160
2180
2200
--33
2220
f, FREQUENCY (MHz)
Figure 4. 2-
-Carrier W-
-CDMA Broadband Performance @ P
out
= 60 Watts Avg.
17
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1800 mA
1500 mA
1200 mA
--20
--25
--30
--35
--40
--45
--50
--55
--60
400
1
16
G
ps
, POWER GAIN (dB)
15
14
13
12
1
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
I
DQ
= 600 mA
900 mA
600 mA
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
10
100
P
out
, OUTPUT POWER (WATTS) PEP
100
400
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-
-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21140HR3 MRF6S21140HSR3
RF Device Data
Freescale Semiconductor
5
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