Freescale Semiconductor
Technical Data
Document Number: MRF6S18100N
Rev. 2, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d
multicarrier amplifier applications.
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 900 mA,
P
out
= 100 Watts, f = 1990 MHz
Power Gain — 14.5 dB
Drain Efficiency — 49%
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 700 mA,
P
out
= 40 Watts Avg., Full Frequency Band (1805 - 1880 MHz or
1930- 1990 MHz)
Power Gain — 15 dB
Drain Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 2% rms
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S18100NR1
MRF6S18100NBR1
1805- 1990 MHz, 100 W, 28 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
MRF6S18100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
MRF6S18100NBR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 CW
Case Temperature 77°C, 40 CW
Symbol
R
θJC
Value
(2,3)
0.51
0.62
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
MRF6S18100NR1 MRF6S18100NBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 330
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.3 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.6
1.5
—
2
2.8
0.24
3
3.5
—
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
500
μAdc
μAdc
nAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, P
out
= 100 W, I
DQ
= 900 mA, f = 1990 MHz
G
ps
η
D
IRL
P1dB
13
47
—
100
14.5
49
- 12
110
16
—
-9
—
dB
%
dB
W
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 700 mA, P
out
= 40 W Avg.,
1805- 1880 MHz or 1930 - 1990 MHz EDGE Modulation
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point
1. Part internally matched both on input and output.
G
ps
η
D
EVM
SR1
SR2
G
ps
η
D
IRL
P1dB
—
—
—
—
—
—
—
—
—
15
35
2
- 63
- 76
14.5
49
- 12
110
—
—
—
—
—
—
—
—
—
dB
%
% rms
dBc
dBc
dB
%
dB
W
Typical CW Performances
(In Freescale GSM Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 900 mA, P
out
= 100 W, 1805 - 1880 MHz
MRF6S18100NR1 MRF6S18100NBR1
2
RF Device Data
Freescale Semiconductor
R1
V
BIAS
+
R2
C1
C2
Z6
Z13
RF
INPUT
R3
Z1
C6
C7
C8
Z2
Z3
Z4
Z5
Z7
Z8
Z9
Z10
Z11
C10
Z12
RF
OUTPUT
C3
C4
C5
C14
V
SUPPLY
DUT
Z14
C9
V
SUPPLY
C11
C12
C13
Z1, Z12
Z2*
Z3*
Z4*
Z5
Z6
Z7, Z8
0.250″ x 0.083″ Microstrip
0.450″ x 0.083″ Microstrip
0.535″ x 0.083″ Microstrip
0.540″ x 0.083″ Microstrip
0.365″ x 1.000″ Microstrip
1.190″ x 0.080″ Microstrip
0.115″ x 1.000″ Microstrip
Z9
Z10*
Z11*
Z13, Z14
PCB
0.485″ x 1.000″ Microstrip
0.590″ x 0.083″ Microstrip
0.805″ x 0.083″ Microstrip
0.870″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
*Variable for tuning.
Figure 1. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1930 - 1990 MHz
Table 6. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1930 - 1990 MHz
Part
C1
C2, C3, C6, C10, C11
C4, C5, C12, C13
C7
C8
C9
C14
R1, R2
R3
Description
100 nF Chip Capacitor
6.8 pF Chip Capacitors
4.7
μF
Chip Capacitors
0.3 pF Chip Capacitor
1.3 pF Chip Capacitor
0.5 pF Chip Capacitor
470
μF,
63 V Electrolytic Capacitor, Radial
10 kΩ, 1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistor
Part Number
12065C104KAT
ATC100B6R8BT500XT
C4532X5R1H475MT
ATC700B0R3BT500XT
ATC100B1R3BT500XT
ATC100B0R5BT500XT
EKME630ELL471MK25S
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
AVX
ATC
TDK
ATC
ATC
ATC
Multicomp
Vishay
Vishay
MRF6S18100NR1 MRF6S18100NBR1
RF Device Data
Freescale Semiconductor
3
C14
R1
R2 C1 C2
C3
C4 C5
R3
C6
C7
C8
CUT OUT AREA
C10
C9
C11
C12 C13
MRF6S18100N
Rev. 0
Figure 2. MRF6S18100NR1(NBR1) Test Circuit Component Layout — 1930 - 1990 MHz
MRF6S18100NR1 MRF6S18100NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
—
1930 - 1990 MHz
17
η
D
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
16
IRL
15
G
ps
14
V
DD
= 28 Vdc
I
DQ
= 900 mA
13
1900
1920
1940
1960
1980
2000
20
2020
−40
30
40
50
−10
60
0
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
−20
−30
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 100 Watts
17
60
0
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
16
IRL
15
G
ps
14
η
D
V
DD
= 28 Vdc
I
DQ
= 900 mA
13
1900
1920
1940
1960
1980
2000
50
−10
40
−20
30
−30
20
2020
−40
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 40 Watts
16
I
DQ
= 1350 mA
G
ps
, POWER GAIN (dB)
1125 mA
900 mA
16
14
15
G
ps
, POWER GAIN (dB)
12
10
32 V
28 V
14
665 mA
13
450 mA
12
V
DD
= 28 Vdc
f = 1960 MHz
11
1
10
P
out
, OUTPUT POWER (WATTS)
100
8
6
4
2
0
20
40
60
80
100
120
140
160
P
out
, OUTPUT POWER (WATTS) CW
I
DQ
= 900 mA
f = 1960 MHz
V
DD
= 24 V
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
MRF6S18100NR1 MRF6S18100NBR1
RF Device Data
Freescale Semiconductor
5
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