Freescale Semiconductor
Technical Data
Document Number: MRF6S18060N
Rev. 4, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
GSM Application
•
Typical GSM Performance: V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 Watts
CW, f = 1990 MHz
Power Gain — 15 dB
Drain Efficiency - 50%
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ
= 450 mA,
P
out
= 25 Watts Avg., Full Frequency Band (1805- 1880 MHz or
1930- 1990 MHz)
Power Gain — 15.5 dB
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 2% rms
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S18060NR1
MRF6S18060NBR1
1800- 2000 MHz, 60 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S18060NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S18060NBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 77°C, 25 W CW
Symbol
R
θJC
Value
(2,3)
0.81
0.95
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRF6S18060NR1 MRF6S18060NBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DD
= 26 Vdc, I
D
= 600 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
—
2
2.8
0.24
3
4
—
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 W CW, f = 1990 MHz
G
ps
η
D
IRL
P1dB
14
48
—
60
15
50
- 12
65
17
—
-9
—
dB
%
dB
W
Typical GSM EDGE Performances
(In Freescale Broadband Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 450 mA,
P
out
= 25 W Avg., 1805 - 1880 MHz or 1930 - 1990 MHz, EDGE Modulation
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
15.5
32
2
- 62
- 76
—
—
—
—
—
dB
%
% rms
dBc
dBc
Typical CW Performances
(In Freescale Broadband Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 W,
1805 - 1880 MHz or 1930 - 1990 MHz
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
1. Part is internally matched both on input and output.
G
ps
η
D
IRL
P1dB
—
—
—
—
15
50
- 12
65
—
—
—
—
dB
%
dB
W
MRF6S18060NR1 MRF6S18060NBR1
2
RF Device Data
Freescale Semiconductor
V
BIAS
R1
R2
C1
Z6
Z13
R3
RF
INPUT
Z8
Z1
C3
Z2
Z3
C5
C6
Z4
Z5
Z7
C8
DUT
Z9
Z10
C7
Z11
C4
C2
C9
C10
+
C11
V
SUPPLY
Z12
RF
OUTPUT
Z1
Z2*
Z3*
Z4*
Z5
Z6
Z7, Z8
0.250″ x 0.083″ Microstrip
0.950″ x 0.083″ Microstrip
0.250″ x 0.083″ Microstrip
0.315″ x 0.083″ Microstrip
0.365″ x 1.000″ Microstrip
0.680″ x 0.080″ Microstrip
0.115″ x 1.000″ Microstrip
Z9
Z10*
Z11*
Z12
Z13
PCB
0.485″ x 1.000″ Microstrip
0.500″ x 0.083″ Microstrip
0.895″ x 0.083″ Microstrip
0.250″ x 0.083″ Microstrip
0.200″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
* Variable for tuning
Figure 1. MRF6S18060NR1(NBR1) Test Circuit Schematic — 1900 MHz
Table 6. MRF6S18060NR1(NBR1) Test Circuit Component Designations and Values — 1900 MHz
Part
C1, C2, C3, C4
C5
C6
C7, C8
C9, C10
C11
R1, R2
R3
Description
6.8 pF Chip Capacitors
1.5 pF Chip Capacitor
1.8 pF Chip Capacitor
1 pF Chip Capacitors
10
μF
Chip Capacitors
220
μF,
63 V Electrolytic Capacitor, Radial
10 kW, 1/4 W Chip Resistors
10
W,
1/4 W Chip Resistor
Part Number
ATC100B6R8CT500XT
ATC100B1R5BT500XT
ATC100B1R8BT500XT
ATC100B1R0BT500XT
C5750X5R1H106MT
2222 - 136 - 68221
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
ATC
ATC
ATC
ATC
TDK
Vishay
Vishay
Vishay
MRF6S18060NR1 MRF6S18060NBR1
RF Device Data
Freescale Semiconductor
3
C11
V
GS
R1
R2
C1
C2
C9
R3
C5
CUT OUT AREA
C7
C10
V
DS
C3
C6
C8
C4
MRF6S18060N/NB
Rev. 0
Figure 2. MRF6S18060NR1(NBR1) Test Circuit Component Layout — 1900 MHz
MRF6S18060NR1 MRF6S18060NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
—
1900 MHz
18
57
55
0
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
16
G
ps
15
IRL
14
V
DD
= 26 Vdc
I
DQ
= 600 mA
13
1900
1920
1940
1960
1980
2000
53
η
D
, DRAIN EFFICIENCY (%)
η
D
, DRAIN EFFICIENCY (%)
17
G
ps
, POWER GAIN (dB)
η
D
−5
−10
51
−15
49
−20
47
2020
−25
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 60 Watts
18
42
40
0
17
G
ps
, POWER GAIN (dB)
η
D
−5
16
G
ps
15
IRL
V
DD
= 26 Vdc
I
DQ
= 600 mA
13
1900
1920
1940
1960
1980
2000
38
−10
36
−15
14
34
−20
32
2020
−25
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 30 Watts
17
I
DQ
= 900 mA
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
16
750 mA
600 mA
15
450 mA
14
300 mA
13
V
DD
= 26 Vdc
f = 1960 MHz
12
1
10
P
out
, OUTPUT POWER (WATTS)
100
12
0
20
40
60
80
100
P
out
, OUTPUT POWER (WATTS) CW
16
17
I
DQ
= 600 mA
f = 1960 MHz
15
V
DD
= 32 V
14
26 V
13
24 V
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
MRF6S18060NR1 MRF6S18060NBR1
RF Device Data
Freescale Semiconductor
5
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