Freescale Semiconductor
Technical Data
Document Number: MRF5S19060N
Rev. 7, 10/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband
performance of these devices make them ideal for large - signal, common -
source amplifier applications in 28 Volt base station equipment.
•
Typical 2 - carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 750 mA,
P
out
= 12 Watts Avg., 1990 MHz, IS - 95 (Pilot, Sync, Paging, Traffic Codes
8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 23%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S19060NR1
MRF5S19060NBR1
1930- 1990 MHz, 12 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S19060NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S19060NBR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
218.8
1.25
- 65 to +175
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 12 W CW
Symbol
R
θJC
Value
(1,2)
0.80
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF5S19060NR1 MRF5S19060NBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
C (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 225
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 750 mAdc)
Drain- Source On - Voltage
(V
GS
= 5 Vdc, I
D
= 2.25 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.25 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
—
3.8
0.26
5
3.5
—
—
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, P
out
= 12 W Avg., f1 = 1987.5 MHz,
f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @
±885
kHz
Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
Typical RF Performance
(50 ohm system)
Pulse Peak Power
(V
DD
= 28 Vdc, 1 - Tone CW Pulsed, I
DQ
= 750 mA, t
ON
= 8
μs,
1% Duty Cycle)
Video Bandwidth
(V
DD
= 28 Vdc, P
out
= 60 W PEP, I
DQ
= 750 mA, Tone Spacing =
1 MHz to VBW,
Δ
IM3<2dB)
1. Part is internally matched both on input and output.
P
sat
—
110
—
W
G
ps
η
D
IM3
ACPR
IRL
12.5
21
—
—
—
14
23
- 37
- 51
- 12
16
—
- 35
- 48
-9
dB
%
dBc
dBc
dB
VBW
—
35
—
MHz
MRF5S19060NR1 MRF5S19060NBR1
2
RF Device Data
Freescale Semiconductor
Z11
V
BIAS
R1
R2
+
C1
C2
Z6
C3
+
C4
+
C5
+
C6
V
SUPPLY
R3
RF
INPUT
RF
OUTPUT
Z1
C7
Z2
Z3
Z4
Z5
Z7
Z8
Z9
C12
C10
C11
Z10
DUT
C8
C9
Z12
+
C13
C14
+
C15
Z1
Z2*
Z3*
Z4*
Z5
Z6
Z7
0.250″ x 0.083″ Microstrip
0.500″ x 0.083″ Microstrip
0.500″ x 0.083″ Microstrip
0.515″ x 0.083″ Microstrip
0.480″ x 1.000″ Microstrip
1.140″ x 0.080″ Microstrip
0.600″ x 1.000″ Microstrip
Z8*
Z9*
Z10
Z11
Z12
PCB
0.420″ x 0.083″ Microstrip
0.975″ x 0.083″ Microstrip
0.250″ x 0.083″ Microstrip
0.700″ x 0.080″ Microstrip
0.700″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
* Variable for tuning
Figure 1. MRF5S19060NR1/NBR1 Test Circuit Schematic
Table 6. MRF5S19060NR1/NBR1 Test Circuit Component Designations and Values
Part
C1
C2
C3, C7, C12, C13
C4, C5, C14, C15
C6
C8
C9
C10
C11
R1, R2
R3
Description
1
μF,
35 V Tantalum Capacitor
10 pF 100B Chip Capacitor
6.8 pF 100B Chip Capacitors
10
μF,
35 V Tantalum Capacitors
220
μF,
63 V Electrolytic Capacitor, Radial
0.8 pF 100B Chip Capacitor
1.5 pF 100B Chip Capacitor
1.0 pF 100B Chip Capacitor
0.2 pF 100B Chip Capacitor
10 kW, 1/4 W Chip Resistors
10
W,
1/4 W Chip Resistors
Part Number
TAJB105K35S
ATC100B10R0CT500XT
ATC100B6R8CT500XT
TAJD106K035S
2222- 136- 68221
ATC100B0R8BT500XT
ATC100B1R5BT500XT
ATC100B1R0BT500XT
ATC100B0R2BT500XT
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
AVX
ATC
ATC
AVX
Vishay
ATC
ATC
ATC
ATC
Vishay
Vishay
MRF5S19060NR1 MRF5S19060NBR1
RF Device Data
Freescale Semiconductor
3
V
GG
R1
R2 C1 C2
C3
V
DD
C4 C5
R3
CUT OUT AREA
C6
C7
C8
C9
C10
C11
C12
C14
C15
C13
MRF5S19060M
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19060NR1/NBR1 Test Circuit Component Layout
MRF5S19060NR1 MRF5S19060NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−5
−10
−15
−20
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−5
−10
−15
−20
V
DD
= 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two−Tone Measurements,
2.5 MHz Tone Spacing
I
DQ
= 350 mA
1150 mA
950 mA
−45
−50
−55
−60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
550 mA
750 mA
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
14.8
14.6
G
ps
, POWER GAIN (dB)
14.4
14.2
14
13.8
ACPR
13.6
1900
1920
1940
1960
1980
2000
−53
2020
V
DD
= 28 Vdc, P
out
= 12 W (Avg.), I
DQ
= 750 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
IRL
η
D
G
ps
IM3
24
23
22
−35
−41
−47
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 12 Watts Avg.
14.2
14
G
ps
, POWER GAIN (dB)
13.8
13.6
13.4
13.2
13
1900
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
G
ps
IM3
IRL
39
37
35
−25
−31
ACPR
−37
−43
2020
η
D
V
DD
= 28 Vdc, P
out
= 30 W (Avg.), I
DQ
= 750 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1920
1940
1960
1980
2000
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 30 Watts Avg.
17
I
DQ
= 1150 mA
950 mA
15
750 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
16
G
ps
, POWER GAIN (dB)
V
DD
= 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−15
−20
−25
−30
−35
−40
14
550 mA
13
350 mA
12
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S19060NR1 MRF5S19060NBR1
RF Device Data
Freescale Semiconductor
5
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