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MCM63F837

产品描述256K x 36 and 512K x 18 Bit Flow鈥揟hrough BurstRAM Synchronous Fast Static RAM
文件大小723KB,共28页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
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MCM63F837概述

256K x 36 and 512K x 18 Bit Flow鈥揟hrough BurstRAM Synchronous Fast Static RAM

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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCM63F837/D
Product Preview
256K x 36 and 512K x 18 Bit
Flow–Through BurstRAM
Synchronous Fast Static RAM
The MCM63F837 and MCM63F919 are 8M–bit synchronous fast static RAMs
designed to provide a burstable, high performance, secondary cache for the
PowerPC™ and other high performance microprocessors. The MCM63F837
(organized as 256K words by 36 bits) and the MCM63F919 (organized as 512K
words by 18 bits) are fabricated in Motorola’s high performance silicon gate
CMOS technology. Synchronous design allows precise cycle control with the
use of an external clock (K).
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)
controlled through positive–edge–triggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM63F837 and MCM63F919
(burst sequence operates in linear or interleaved mode dependent upon the state
of LBO) and controlled by the burst address advance (ADV) input pin.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and
synchronous write enable (SW) are provided to allow writes to either individual
bytes or to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa,
SBb controls DQb, etc. Individual bytes are written if the selected byte writes SBx
are asserted with SW. All bytes are written if either SGW is asserted or if all SBx
and SW are asserted.
For read cycles, a flow–through SRAM allows output data to simply flow freely
from the memory array.
The MCM63F837 and MCM63F919 operate from a 3.3 V core power supply
and all outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs
are JEDEC standard JESD8–A and JESD8–5 compatible.
MCM63F837/MCM63F919–7 = 7 ns Access/8.5 ns Cycle (117 MHz)
MCM63F837/MCM63F919–8 = 8 ns Access/10 ns Cycle (100 MHz)
MCM63F837/MCM63F919–8.5 = 8.5 ns Access/11 ns Cycle (90 MHz)
3.3 V
±5%
Core Power Supply, 2.5 V or 3.3 V I/O Supply
ADSP, ADSC, and ADV Burst Control Pins
Selectable Burst Sequencing Order (Linear/Interleaved)
Single–Cycle Deselect Timing
Internally Self–Timed Write Cycle
Byte Write and Global Write Control
Sleep Mode (ZZ)
Simplified JTAG
JEDEC Standard 100–Pin TQFP and 119–Bump PBGA Packages
MCM63F837
MCM63F919
TQ PACKAGE
TQFP
CASE 983A–01
Freescale Semiconductor, Inc...
ZP PACKAGE
PBGA
CASE 999–02
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 1
8/23/99
©
Motorola, Inc. 1999
MOTOROLA FAST SRAM
For More Information On This Product,
Go to: www.freescale.com
MCM63F837•MCM63F919
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