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SB120

产品描述Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),
产品类别分立半导体    二极管   
文件大小138KB,共2页
制造商Galaxy Semi-Conductor Co Ltd
标准
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SB120概述

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),

SB120规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Galaxy Semi-Conductor Co Ltd
Reach Compliance Codeunknown
配置SINGLE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.5 V
最大非重复峰值正向电流40 A
元件数量1
最高工作温度125 °C
最大输出电流1 A
最大重复峰值反向电压20 V
表面贴装NO
技术SCHOTTKY

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BL
FEATURES
GALAXY ELECTRICAL
SB120 - - - SB1A0
VOLTAGE RANGE: 20 ---
100
V
CURRENT: 1.0 A
SCHOTTKY BARRIER RECTIFIER
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
DO - 41
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB
120
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
@T
J
=125℃
(see fig.1)
SB
130
30
21
30
SB
140
40
28
40
SB
150
50
35
50
SB
160
60
42
60
1.0
SB
170
70
49
70
SB
180
80
56
80
SB
190
90
63
90
SB
UNITS
1A0
100
70
100
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
I
FSM
40.0
A
Maximum instantaneous forward voltage
@ 1.0A
Maximum reverse current
@T
A
=25℃
V
F
I
R
C
J
R
θJA
T
J
T
STG
0.5
0.7
0.5
0.85
V
mA
pF
℃/W
www.galaxycn.com
at rated DC blocking voltage @T
A
=100℃
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
10.0
110
50
- 55 --- + 125
5.0
80
- 55 --- + 150
- 55 --- + 150
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermalresistance junction to ambient
Document Number 0266004
BL
GALAXY ELECTRICAL
1.

 
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