Small Signal Field-Effect Transistor, 0.051A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236,
参数名称 | 属性值 |
厂商名称 | TEMIC |
Reach Compliance Code | unknown |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 240 V |
最大漏极电流 (ID) | 0.051 A |
最大漏源导通电阻 | 60 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 10 pF |
JEDEC-95代码 | TO-236 |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
TN2460TT1 | TN2460L-18 | TN2460LTA | TN2460TT2 | TN2460LTR | |
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描述 | Small Signal Field-Effect Transistor, 0.051A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | Small Signal Field-Effect Transistor, 0.075A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, | Small Signal Field-Effect Transistor, 0.075A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, | Small Signal Field-Effect Transistor, 0.051A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | Small Signal Field-Effect Transistor, 0.075A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 240 V | 240 V | 240 V | 240 V | 240 V |
最大漏极电流 (ID) | 0.051 A | 0.075 A | 0.075 A | 0.051 A | 0.075 A |
最大漏源导通电阻 | 60 Ω | 60 Ω | 60 Ω | 60 Ω | 60 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 10 pF | 10 pF | 10 pF | 10 pF | 10 pF |
JEDEC-95代码 | TO-236 | TO-226AA | TO-226AA | TO-236 | TO-226AA |
JESD-30 代码 | R-PDSO-G3 | O-PBCY-W3 | O-PBCY-W3 | R-PDSO-G3 | O-PBCY-W3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | ROUND | ROUND | RECTANGULAR | ROUND |
封装形式 | SMALL OUTLINE | CYLINDRICAL | CYLINDRICAL | SMALL OUTLINE | CYLINDRICAL |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | NO | NO | YES | NO |
端子形式 | GULL WING | WIRE | WIRE | GULL WING | WIRE |
端子位置 | DUAL | BOTTOM | BOTTOM | DUAL | BOTTOM |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
厂商名称 | TEMIC | - | - | TEMIC | TEMIC |
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