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PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 02 — 2 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)
plastic packages
Table 1.
Product overview
Package
NXP
PEMB30
PUMB30
SOT666
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD30
PUMD30
NPN/NPN
complement
PEMH30
PUMH30
Type number
1.2 Features
I
100 mA output current capability
I
Built-in bias resistors
I
Simplifies circuit design
I
Reduces component count
I
Reduces pick and place costs
1.3 Applications
I
Low current peripheral driver
I
Control of IC inputs
I
Cost-saving alternative for BC857BS
and BC857BV
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min
-
-
1.54
Typ
-
-
2.2
Max
−50
−100
2.86
Unit
V
mA
kΩ
Per transistor
NXP Semiconductors
PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
TR1
Simplified outline
6
5
4
Symbol
6
5
4
R1
TR2
1
2
3
001aab555
R1
1
2
3
006aaa268
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMB30
PUMB30
-
SC-88
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMB30
PUMB30
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
2T
*B2
Type number
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
2 of 10
NXP Semiconductors
PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current
peak collector current
total power dissipation
SOT363
SOT666
Per device
P
tot
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
[1]
[2]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[1][2]
Min
-
-
-
-
-
Max
−50
−50
−5
−100
−100
Unit
V
V
V
mA
mA
Per transistor
-
-
200
200
mW
mW
T
amb
≤
25
°C
[1]
[1][2]
-
-
−65
-
−65
300
300
+150
150
+150
mW
mW
°C
°C
°C
storage temperature
junction temperature
ambient temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Conditions
in free air
[1]
[1][2]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
in free air
[1]
[1][2]
-
-
-
-
416
416
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
3 of 10
NXP Semiconductors
PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
Conditions
V
CB
=
−50
V; I
E
= 0 A
Min
-
-
-
-
30
-
1.54
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
-
Typ
-
-
-
-
-
-
2.2
-
Max
−100
−1
−50
−100
-
−150
2.86
3
mV
kΩ
pF
Unit
nA
µA
µA
nA
Per transistor
collector-emitter cut-off V
CE
=
−30
V; I
B
= 0 A
current
V
CE
=
−30
V; I
B
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−20
mA
I
C
=
−10
mA; I
B
=
−0.5
mA
I
EBO
h
FE
V
CEsat
R1
C
c
500
h
FE
400
(1)
006aaa691
−1
006aaa692
V
CEsat
(V)
300
(2)
−10
−1
200
(3)
(1)
(2)
(3)
100
0
−10
−1
−1
−10
I
C
(mA)
−10
2
−10
−2
−10
−1
−1
−10
I
C
(mA)
−10
2
V
CE
=
−5
V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
4 of 10
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